FDH055N15A
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onsemi FDH055N15A

Manufacturer No:
FDH055N15A
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 150V 158A TO247-3
Delivery:
Payment:
iso14001
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iso9001
iso13485

Product Introduction

Overview

The FDH055N15A is a high-performance N-Channel MOSFET produced by onsemi, part of their Power Trench® family. This device is designed to offer advanced package and silicon combinations, ensuring low on-resistance (Rds(on)) and high efficiency. It features a thermally efficient TO-247 package and incorporates next-generation enhanced body diode technology for soft recovery, making it suitable for a wide range of power management applications.

Key Specifications

ParameterSymbolValueUnit
Drain to Source VoltageVDSS150V
Continuous Drain CurrentID167A
On-ResistanceRds(on)2.5 mΩ (typical at VGS = 10 V)
Gate to Source Threshold VoltageVGS(th)2-4V
Package TypeTO-247
Pins3

Key Features

  • Advanced package and silicon combination for low Rds(on) and high efficiency
  • Thermally efficient TO-247 package
  • Next-generation enhanced body diode technology for soft recovery
  • High continuous drain current of 167 A
  • Low on-resistance of 2.5 mΩ (typical at VGS = 10 V)

Applications

The FDH055N15A is suitable for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial power systems
  • Automotive systems requiring high current and voltage handling
  • Renewable energy systems such as solar and wind power

Q & A

  1. What is the maximum drain to source voltage of the FDH055N15A?
    The maximum drain to source voltage (VDSS) is 150 V.
  2. What is the continuous drain current rating of the FDH055N15A?
    The continuous drain current (ID) is 167 A.
  3. What is the typical on-resistance of the FDH055N15A?
    The typical on-resistance (Rds(on)) is 2.5 mΩ at VGS = 10 V.
  4. What package type does the FDH055N15A use?
    The FDH055N15A uses a TO-247 package.
  5. What are the key features of the FDH055N15A?
    The key features include advanced package and silicon combination, thermally efficient TO-247 package, and next-generation enhanced body diode technology for soft recovery.
  6. What are some common applications for the FDH055N15A?
    Common applications include power supplies, motor control systems, industrial power systems, automotive systems, and renewable energy systems.
  7. What is the gate to source threshold voltage range of the FDH055N15A?
    The gate to source threshold voltage (VGS(th)) range is 2-4 V.
  8. Is the FDH055N15A suitable for high-power applications?
    Yes, the FDH055N15A is designed for high-power applications due to its high current and voltage handling capabilities.
  9. Where can I find detailed specifications for the FDH055N15A?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  10. What is the significance of the enhanced body diode technology in the FDH055N15A?
    The enhanced body diode technology is engineered for soft recovery, which improves the overall efficiency and reliability of the device in high-power switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:158A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.9mOhm @ 120A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9445 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):429W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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