FDFS2P106A
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onsemi FDFS2P106A

Manufacturer No:
FDFS2P106A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 3A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDFS2P106A is a high-performance power MOSFET developed by onsemi, formerly known as Fairchild Semiconductor. This device combines the advantages of PowerTrench MOSFET technology with a low forward voltage drop Schottky barrier rectifier, making it an ideal solution for various power management applications. It is designed specifically as a single package solution for DC to DC converters, offering fast switching and low gate charge characteristics.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 40 V
VGS (Gate-Source Voltage) ±20 V
ID (Continuous Drain Current) 3 A
RDS(ON) (On-Resistance) Low Ω
QG (Total Gate Charge) Low nC
Package 8-pin SOIC N T/R

Key Features

  • Fast switching capabilities, making it suitable for high-frequency applications.
  • Low gate charge, which reduces the power required for switching.
  • Very low forward voltage drop Schottky barrier rectifier, enhancing efficiency in power conversion.
  • Leading on-resistance, ideal for motor driver applications.
  • Single package solution for DC to DC converters, simplifying design and reducing component count.

Applications

  • DC to DC converters: The FDFS2P106A is specifically designed for these applications, offering high efficiency and fast switching.
  • Motor driver applications: Its low on-resistance makes it suitable for motor control circuits.
  • Power management systems: It can be used in various power management scenarios where high performance and efficiency are required.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the FDFS2P106A?

    The maximum drain-source voltage (VDS) is 40V.

  2. What is the continuous drain current (ID) rating of the FDFS2P106A?

    The continuous drain current (ID) rating is 3A.

  3. What type of package does the FDFS2P106A come in?

    The FDFS2P106A comes in an 8-pin SOIC N T/R package.

  4. What are the key features of the FDFS2P106A?

    The key features include fast switching, low gate charge, very low forward voltage drop Schottky barrier rectifier, and leading on-resistance.

  5. What are some common applications of the FDFS2P106A?

    Common applications include DC to DC converters, motor driver applications, and power management systems.

  6. Why is the FDFS2P106A suitable for DC to DC converters?

    The FDFS2P106A is suitable for DC to DC converters due to its fast switching capabilities, low gate charge, and the inclusion of a low forward voltage drop Schottky barrier rectifier.

  7. What is the significance of the PowerTrench technology in the FDFS2P106A?

    The PowerTrench technology enhances the performance of the MOSFET by providing better on-resistance and switching characteristics.

  8. How does the low gate charge benefit the FDFS2P106A in power management applications?

    The low gate charge reduces the power required for switching, making the device more efficient in power management applications.

  9. Can the FDFS2P106A be used in high-frequency applications?

    Yes, the FDFS2P106A is suitable for high-frequency applications due to its fast switching capabilities.

  10. What is the maximum gate-source voltage (VGS) for the FDFS2P106A?

    The maximum gate-source voltage (VGS) is ±20V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:110mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:714 pF @ 30 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):900mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number FDFS2P106A FDFS2P102A FDFS2P103A
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor
Product Status Active Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 3.3A (Ta) 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 3A, 10V 125mOhm @ 3.3A, 10V 59mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V 3 nC @ 5 V 8 nC @ 5 V
Vgs (Max) ±20V ±20V ±25V
Input Capacitance (Ciss) (Max) @ Vds 714 pF @ 30 V 182 pF @ 10 V 535 pF @ 15 V
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated) Schottky Diode (Isolated)
Power Dissipation (Max) 900mW (Ta) 900mW (Ta) 900mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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