Overview
The FDD4685-F085P is a P-Channel PowerTrench® MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. It features a drain-to-source voltage (VDSS) of -40V and a continuous drain current (ID) of -32A. The MOSFET is packaged in a TO-252 (D-PAK) package, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| VDSS (Drain-to-Source Voltage) | ID = -250μA, VGS = 0V | -40 | - | - | V |
| VGS (Gate-to-Source Voltage) | - | - | - | ±20 | V |
| ID (Drain Current - Continuous) | TC < 90°C, VGS=10 | -32 | - | - | A |
| PD (Power Dissipation) | - | - | - | 83 | W |
| TJ, TSTG (Operating and Storage Temperature) | - | -55 to +175 | - | - | °C |
| RθJC (Thermal Resistance, Junction to Case) | - | - | - | 1.8 | °C/W |
| RθJA (Maximum Thermal Resistance, Junction to Ambient) | - | - | - | 40 | °C/W |
| RDS(on) (Drain to Source On Resistance) | ID = -8.4A, VGS= -10V | - | 23 | 27 | mΩ |
| Qg(tot) (Total Gate Charge) | VDD = -20V, VGS = -5V, ID = -8.4A | - | 19 | 27 | nC |
Key Features
- Low On-Resistance: Typical RDS(on) = 23 mΩ at VGS = -10V, ID = -8.4 A.
- High Current Capability: Continuous drain current of -32 A.
- UIS Capability: The MOSFET is capable of withstanding Unclamped Inductive Switching (UIS) conditions.
- RoHS Compliant: The device is compliant with the Restriction of Hazardous Substances (RoHS) directive.
- AEC Q101 Qualified: Qualified to the Automotive Electronics Council (AEC) Q101 standard, ensuring reliability in automotive applications.
Applications
- Inverter Applications: Suitable for use in inverter circuits due to its high current and low on-resistance characteristics.
- Power Supplies: Ideal for power supply applications requiring efficient switching and high current handling.
Q & A
- What is the maximum drain-to-source voltage of the FDD4685-F085P MOSFET?
The maximum drain-to-source voltage (VDSS) is -40V.
- What is the continuous drain current rating of the FDD4685-F085P?
The continuous drain current (ID) is -32A.
- What is the typical on-resistance of the FDD4685-F085P at VGS = -10V and ID = -8.4A?
The typical on-resistance (RDS(on)) is 23 mΩ.
- Is the FDD4685-F085P RoHS compliant?
Yes, the FDD4685-F085P is RoHS compliant.
- What is the maximum junction temperature for the FDD4685-F085P?
The maximum junction temperature (TJ) is 175°C.
- What are the typical applications for the FDD4685-F085P MOSFET?
The FDD4685-F085P is typically used in inverter and power supply applications.
- What is the thermal resistance from junction to case (RθJC) for the FDD4685-F085P?
The thermal resistance from junction to case (RθJC) is 1.8°C/W.
- Is the FDD4685-F085P qualified to any automotive standards?
Yes, the FDD4685-F085P is qualified to the AEC Q101 standard.
- What is the package type of the FDD4685-F085P MOSFET?
The FDD4685-F085P is packaged in a TO-252 (D-PAK) package.
- What is the total gate charge (Qg(tot)) at VDD = -20V, VGS = -5V, and ID = -8.4A?
The total gate charge (Qg(tot)) is 19 nC.
