Overview
The FDD4685-F085 is a P-Channel PowerTrench® MOSFET produced by onsemi. This device is designed using onsemi's proprietary PowerTrench® technology, which offers extremely low on-resistance (RDS(on)) and excellent switching characteristics. The MOSFET is rated for a drain-to-source voltage (VDS) of -40V and a continuous drain current (ID) of -32A, making it suitable for high-performance applications. It is also RoHS compliant and qualified to AEC Q101 standards.
Key Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| VDSS | Drain-to-Source Voltage | - | - | -40 | V | |
| VGS | Gate-to-Source Voltage | - | - | ±20 | V | |
| ID | Drain Current - Continuous (TC < 90°C, VGS=10) | - | - | -32 | A | |
| PD | Power Dissipation | - | - | 83 | W | |
| TJ, TSTG | Operating and Storage Temperature | - | - | -55 to +175 | °C | |
| RθJC | Thermal Resistance, Junction to Case | - | - | 1.8 | °C/W | |
| RθJA | Maximum Thermal Resistance, Junction to Ambient | - | - | 40 | °C/W | |
| RDS(on) | Drain to Source On Resistance | ID = -8.4A, VGS = -10V | - | 23 | 27 | mΩ |
| RDS(on) | Drain to Source On Resistance | ID = -7A, VGS = -4.5V | - | 30 | 35 | mΩ |
| Qg(TOT) | Total Gate Charge | VDD = -20V, VGS = -5V, ID = -8.4A | - | 19 | 27 | nC |
Key Features
- Typical RDS(on) = 23 mΩ at VGS = -10V, ID = -8.4 A and 30 mΩ at VGS = -4.5V, ID = -7 A
- High performance trench technology for extremely low RDS(on) and good switching characteristics
- UIS (Unclamped Inductive Switching) capability
- RoHS compliant
- Qualified to AEC Q101 standards
- Low gate-to-source threshold voltage (VGS(th)) with a typical value of -1.6V
- Low gate-to-source leakage current (IGSS) of ±100 nA
Applications
- Inverter applications
- Power supplies
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the FDD4685-F085 MOSFET?
The maximum drain-to-source voltage (VDSS) is -40V.
- What is the continuous drain current (ID) rating of the FDD4685-F085?
The continuous drain current (ID) rating is -32A.
- What is the typical on-resistance (RDS(on)) of the FDD4685-F085 at VGS = -10V and ID = -8.4A?
The typical on-resistance (RDS(on)) is 23 mΩ.
- Is the FDD4685-F085 RoHS compliant?
Yes, the FDD4685-F085 is RoHS compliant.
- What are the typical gate-to-source threshold voltage (VGS(th)) and its temperature coefficient?
The typical gate-to-source threshold voltage (VGS(th)) is -1.6V, and its temperature coefficient is 4.9 mV/°C.
- What is the maximum thermal resistance (RθJA) of the FDD4685-F085?
The maximum thermal resistance (RθJA) is 40 °C/W.
- What are the typical turn-on and turn-off delay times of the FDD4685-F085?
The typical turn-on delay time (td(on)) is 8 ns, and the typical turn-off delay time (td(off)) is 34 ns.
- What is the total gate charge (Qg(TOT)) of the FDD4685-F085?
The total gate charge (Qg(TOT)) is typically 19 nC.
- In which packages is the FDD4685-F085 available?
The FDD4685-F085 is available in D-PAK (TO-252) packages.
- What are the primary applications of the FDD4685-F085 MOSFET?
The primary applications include inverter and power supply applications.
