FDD4243-F085
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onsemi FDD4243-F085

Manufacturer No:
FDD4243-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 6.7A/14A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD4243-F085 is a P-Channel PowerTrench® MOSFET produced by onsemi. This device is designed using onsemi's proprietary PowerTrench technology, which offers extremely low on-state resistance (rDS(on)) and optimized breakdown voltage (BVDSS) capabilities. It is well-suited for high-performance applications requiring low power losses and high efficiency.

Key Specifications

Parameter Symbol Test Conditions Min Typ Max Units
Drain to Source Voltage VDS -40 V
Gate to Source Voltage VGS ±20 V
Drain Current Continuous ID TC < 130°C, VGS = 10V -14 A
Power Dissipation PD TC = 25°C 50 W
Operating and Storage Temperature TJ, TSTG -55 +175 °C
Thermal Resistance Junction to Case RθJC 3 °C/W
Thermal Resistance Junction to Ambient RθJA TO-252, 1in² copper pad area 40 °C/W
On-State Resistance rDS(on) VGS = -10V, ID = -6.7A 36 64
Total Gate Charge Qg(TOT) VDD = -20V, VGS = -10V, ID = -6.7A 21 29 nC

Key Features

  • High performance trench technology for extremely low rDS(on)
  • Low on-state resistance: typ rDS(on) = 36mΩ at VGS = -10V, ID = -6.7A
  • High total gate charge: typ Qg(TOT) = 21nC at VGS = -10V
  • Pb-Free, Halide Free, and RoHS Compliant
  • Qualified to AEC Q101 standards for automotive applications

Applications

  • Inverters
  • Power Supplies
  • Automotive applications due to its compliance with AEC Q101 standards

Q & A

  1. What is the maximum drain to source voltage of the FDD4243-F085 MOSFET?

    The maximum drain to source voltage (VDS) is -40V

  2. What is the maximum gate to source voltage of the FDD4243-F085 MOSFET?

    The maximum gate to source voltage (VGS) is ±20V

  3. What is the continuous drain current rating of the FDD4243-F085 MOSFET?

    The continuous drain current (ID) is -14A at TC < 130°C and VGS = 10V

  4. What is the maximum power dissipation of the FDD4243-F085 MOSFET?

    The maximum power dissipation (PD) is 50W at TC = 25°C

  5. What is the operating and storage temperature range of the FDD4243-F085 MOSFET?

    The operating and storage temperature range is -55°C to +175°C

  6. What is the thermal resistance from junction to case for the FDD4243-F085 MOSFET?

    The thermal resistance from junction to case (RθJC) is 3°C/W

  7. What is the typical on-state resistance of the FDD4243-F085 MOSFET?

    The typical on-state resistance (rDS(on)) is 36mΩ at VGS = -10V and ID = -6.7A

  8. What is the total gate charge of the FDD4243-F085 MOSFET?

    The total gate charge (Qg(TOT)) is typically 21nC at VDD = -20V, VGS = -10V, and ID = -6.7A

  9. Is the FDD4243-F085 MOSFET RoHS compliant?

    Yes, the FDD4243-F085 MOSFET is Pb-Free, Halide Free, and RoHS Compliant

  10. What are some common applications for the FDD4243-F085 MOSFET?

    Common applications include inverters, power supplies, and automotive applications due to its compliance with AEC Q101 standards

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:6.7A (Ta), 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:44mOhm @ 6.7A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1550 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FDD4243-F085 FDD4243-F085P
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 6.7A (Ta), 14A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 6.7A, 10V 44mOhm @ 6.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1550 pF @ 20 V 1550 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 50W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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