Overview
The FDD4141-F085 is a P-Channel MOSFET produced by onsemi, utilizing their proprietary PowerTrench® technology. This device is designed to deliver low RDS(on) and optimized BVDSS capability, offering superior performance and reduced power dissipation losses in various applications. The FDD4141-F085 is particularly suited for high-performance requirements in converter and inverter applications due to its high trench technology and optimized switching characteristics.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | - | - | -40 | V | |
| VGS (Gate to Source Voltage) | - | - | ±20 | V | |
| ID (Continuous Drain Current) | TC = 25°C | - | -50 | A | |
| ID (Continuous Drain Current, Silicon limited) | TC = 25°C | - | -58 | A | |
| RDS(on) (Static Drain to Source On Resistance) | VGS = -10 V, ID = -12.7 A | - | 12.3 | mΩ | |
| RDS(on) (Static Drain to Source On Resistance) | VGS = -4.5 V, ID = -10.4 A | - | 18.0 | mΩ | |
| BVDSS (Drain to Source Breakdown Voltage) | ID = -250 μA, VGS = 0 V | -40 | - | V | |
| TJ (Operating and Storage Junction Temperature Range) | - | -55 to +175 | - | °C | |
| PD (Power Dissipation) | TC = 25°C | - | 69 | W |
Key Features
- High performance trench technology for extremely low RDS(on)
- AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive applications
- Pb-free and RoHS compliant, adhering to environmental standards
- Optimized switching performance capability, reducing power dissipation losses in converter/inverter applications
- Low RDS(on) values: 12.3 mΩ at VGS = -10 V, ID = -12.7 A and 18.0 mΩ at VGS = -4.5 V, ID = -10.4 A
Applications
- Inverter applications, benefiting from the device's low RDS(on) and optimized switching performance
- Power supplies, where high efficiency and low power dissipation are crucial
Q & A
- What is the maximum drain to source voltage (VDS) for the FDD4141-F085?
The maximum drain to source voltage (VDS) is -40 V
- What are the typical RDS(on) values for the FDD4141-F085?
The typical RDS(on) values are 12.3 mΩ at VGS = -10 V, ID = -12.7 A and 18.0 mΩ at VGS = -4.5 V, ID = -10.4 A
- Is the FDD4141-F085 AEC-Q101 qualified?
Yes, the FDD4141-F085 is AEC-Q101 qualified and PPAP capable
- What are the primary applications of the FDD4141-F085?
The primary applications include inverter and power supply applications
- Is the FDD4141-F085 Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant
- What is the maximum continuous drain current for the FDD4141-F085?
The maximum continuous drain current is -50 A at TC = 25°C
- What is the operating and storage junction temperature range for the FDD4141-F085?
The operating and storage junction temperature range is -55 to +175°C
- What is the maximum power dissipation for the FDD4141-F085?
The maximum power dissipation is 69 W at TC = 25°C
- What is the gate to source threshold voltage (VGS(th)) for the FDD4141-F085?
The gate to source threshold voltage (VGS(th)) is between -1 and -3 V
- What are the typical turn-on and turn-off delay times for the FDD4141-F085?
The typical turn-on delay time is 10-19 ns, and the typical turn-off delay time is 38-60 ns
