Overview
The FDD3860 is an N-Channel PowerTrench® MOSFET produced by ON Semiconductor. This device is a rugged gate version of ON Semiconductor's advanced Power Trench® process, designed for low rDS(on) and low Qg figure of merit. It is tailored for a wide range of switching applications, including DC-AC conversion and synchronous rectification. The FDD3860 is known for its high performance trench technology, which provides extremely low on-resistance and high avalanche ruggedness.
Key Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | - | - | - | 100 | V |
| VGS (Gate to Source Voltage) | - | - | - | ±20 | V |
| ID (Drain Current) - Continuous at TC = 25°C | - | - | - | 29 | A |
| ID (Drain Current) - Continuous at TA = 25°C | - | - | - | 6.2 | A |
| ID (Drain Current) - Pulsed | - | - | - | 60 | A |
| EAS (Single Pulse Avalanche Energy) | - | - | - | 121 | mJ |
| PD (Power Dissipation) at TC = 25°C | - | - | - | 83 | W |
| PD (Power Dissipation) at TA = 25°C | - | - | - | 3.75 | W |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | - | - | - | -55 to +175 | °C |
| RθJC (Thermal Resistance, Junction to Case) | - | - | - | 1.8 | °C/W |
| RθJA (Thermal Resistance, Junction to Ambient) | - | - | - | 40 | °C/W |
| rDS(on) (Static Drain to Source On Resistance) at VGS = 10V, ID = 5.9A | - | 29 | 36 | - | mΩ |
Key Features
- High performance trench technology for extremely low rDS(on)
- Maximum rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A
- 100% UIL tested
- RoHS compliant
- Avalanche ruggedness for a wide range of switching applications
Applications
- DC-AC conversion
- Synchronous rectifier
Q & A
- What is the maximum drain to source voltage (VDS) of the FDD3860 MOSFET?
The maximum drain to source voltage (VDS) is 100 V.
- What is the maximum continuous drain current (ID) at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 29 A.
- What is the thermal resistance from junction to case (RθJC) of the FDD3860?
The thermal resistance from junction to case (RθJC) is 1.8 °C/W.
- Is the FDD3860 MOSFET RoHS compliant?
Yes, the FDD3860 MOSFET is RoHS compliant.
- What are the typical applications of the FDD3860 MOSFET?
The FDD3860 MOSFET is typically used in DC-AC conversion and synchronous rectifier applications.
- What is the maximum gate to source voltage (VGS) of the FDD3860 MOSFET?
The maximum gate to source voltage (VGS) is ±20 V.
- What is the single pulse avalanche energy (EAS) of the FDD3860 MOSFET?
The single pulse avalanche energy (EAS) is 121 mJ.
- What is the operating and storage junction temperature range of the FDD3860 MOSFET?
The operating and storage junction temperature range is -55 to +175 °C.
- What is the typical on-resistance (rDS(on)) of the FDD3860 MOSFET at VGS = 10V and ID = 5.9A?
The typical on-resistance (rDS(on)) is 36 mΩ at VGS = 10V and ID = 5.9A.
- What package type is the FDD3860 MOSFET available in?
The FDD3860 MOSFET is available in the D-PAK (TO-252) package.
