FDD18N20LZ
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onsemi FDD18N20LZ

Manufacturer No:
FDD18N20LZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 16A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD18N20LZ is an N-Channel UniFET MOSFET produced by onsemi, designed to offer enhanced performance in various power management applications. This device is part of the low to medium voltage MOSFET family, optimized for reduced on-state resistance and improved switching performance. It also boasts higher avalanche energy strength, making it a reliable choice for demanding power management tasks.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)200 V
Continuous Drain Current (Id)16 A
Drain-Source On-Resistance (Rds(on))125 mOhms
Package Type3-Pin DPAK

Key Features

  • Low on-state resistance to minimize power losses and enhance efficiency.
  • Improved switching performance for faster and more reliable operation.
  • Higher avalanche energy strength to handle transient conditions effectively.
  • Compact 3-Pin DPAK package for space-efficient designs.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Automotive and transportation systems.
  • Consumer electronics and appliances.

Q & A

  1. What is the drain-source breakdown voltage of the FDD18N20LZ MOSFET?
    The drain-source breakdown voltage is 200 V.
  2. What is the continuous drain current rating of the FDD18N20LZ?
    The continuous drain current rating is 16 A.
  3. What is the typical on-state resistance of the FDD18N20LZ?
    The typical on-state resistance is 125 mOhms.
  4. In what package is the FDD18N20LZ available?
    The FDD18N20LZ is available in a 3-Pin DPAK package.
  5. What are some key applications for the FDD18N20LZ MOSFET?
    Key applications include power supplies, motor control systems, industrial automation, automotive systems, and consumer electronics.
  6. Why is the FDD18N20LZ preferred for power management applications?
    The FDD18N20LZ is preferred due to its low on-state resistance, improved switching performance, and higher avalanche energy strength.
  7. Is the FDD18N20LZ still in production?
    No, the FDD18N20LZ is discontinued and not in production, but datasheets are available for reference.
  8. Where can I find detailed specifications for the FDD18N20LZ?
    Detailed specifications can be found on the datasheets available from onsemi, Digi-Key, Mouser, and other electronics component distributors.
  9. What are the benefits of using the FDD18N20LZ in motor control systems?
    The benefits include improved efficiency, faster switching times, and enhanced reliability in handling transient conditions.
  10. Can the FDD18N20LZ be used in automotive applications?
    Yes, the FDD18N20LZ can be used in automotive applications due to its robust specifications and reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:125mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1575 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):89W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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