Overview
The FDC655BN is a single N-Channel Logic Level MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This device is designed to minimize on-state resistance while maintaining superior switching performance. It is well-suited for low voltage and battery-powered applications where low in-line power loss and fast switching are critical.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | 30 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) | 6.3 | A |
| Pulsed Drain Current | - | - |
| Power Dissipation (PD) | 1.6 | W |
| Operating and Storage Junction Temperature Range | -55 to +150 | °C |
| On-State Resistance (RDS(ON)) at VGS = 10 V, ID = 6.3 A | 21 - 25 | mΩ |
| On-State Resistance (RDS(ON)) at VGS = 4.5 V, ID = 5.5 A | 26 - 33 | mΩ |
| Thermal Resistance, Junction to Ambient (RJA) | 78 | °C/W |
Key Features
- High Performance Trench Technology for Extremely Low RDS(ON)
- Fast Switching
- Low Gate Charge
- Pb-Free, Halide Free, and RoHS Compliant
- Low in-line power loss and fast switching capabilities
Applications
The FDC655BN is particularly suited for low voltage and battery-powered applications, including but not limited to:
- Brushless DC Motor Control
- Power Management in Portable Electronics
- Low Voltage Power Switching
- Battery-Powered Devices
Q & A
- What is the maximum drain to source voltage (VDS) of the FDC655BN?
The maximum drain to source voltage (VDS) is 30 V.
- What is the continuous drain current (ID) rating of the FDC655BN?
The continuous drain current (ID) rating is 6.3 A.
- What is the on-state resistance (RDS(ON)) at VGS = 10 V and ID = 6.3 A?
The on-state resistance (RDS(ON)) is between 21 and 25 mΩ.
- Is the FDC655BN Pb-Free and RoHS compliant?
- What is the thermal resistance, junction to ambient (RJA), of the FDC655BN?
The thermal resistance, junction to ambient (RJA), is 78 °C/W.
- What are the typical applications of the FDC655BN?
The FDC655BN is typically used in low voltage and battery-powered applications, including brushless DC motor control and power management in portable electronics.
- What is the gate to source threshold voltage (VGS(th)) of the FDC655BN?
The gate to source threshold voltage (VGS(th)) is between 1 and 3 V.
- What is the maximum power dissipation (PD) of the FDC655BN?
The maximum power dissipation (PD) is 1.6 W.
- What is the operating and storage junction temperature range of the FDC655BN?
The operating and storage junction temperature range is -55 to +150 °C.
- Is the FDC655BN still in production?
No, the FDC655BN is obsolete and no longer manufactured.
