FDC640P_F095
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onsemi FDC640P_F095

Manufacturer No:
FDC640P_F095
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 4.5A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC640P_F095 is a P-Channel PowerTrench MOSFET produced by onsemi (formerly Fairchild Semiconductor). This device is designed for high-performance applications requiring low on-resistance and high current handling. The FDC640P_F095 is part of the PowerTrench family, known for its advanced trench technology that enhances power efficiency and reduces thermal resistance.

Key Specifications

ParameterValue
FET TypeP-Channel MOSFET
Drain to Source Voltage (Vdss)20 V
Continuous Drain Current (Id) @ 25°C4.5 A
On-Resistance (Rds On)53 mΩ
Gate to Source Voltage (Vgs)-12 V to +12 V

Key Features

  • Low on-resistance (Rds On) of 53 mΩ, which reduces power losses and enhances efficiency.
  • High continuous drain current (Id) of 4.5 A, suitable for high-current applications.
  • P-Channel configuration, making it ideal for use in power switching and load management.
  • Advanced PowerTrench technology for improved thermal performance and reduced heat generation.
  • Wide gate to source voltage range (-12 V to +12 V) for flexible control.

Applications

The FDC640P_F095 is suitable for a variety of high-performance applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Audio amplifiers and high-power audio systems.
  • Industrial control and automation systems.
  • Automotive electronics and battery management systems.

Q & A

  1. What is the continuous drain current of the FDC640P_F095? The continuous drain current (Id) of the FDC640P_F095 is 4.5 A at 25°C.
  2. What is the on-resistance (Rds On) of the FDC640P_F095? The on-resistance (Rds On) of the FDC640P_F095 is 53 mΩ.
  3. What is the maximum drain to source voltage (Vdss) of the FDC640P_F095? The maximum drain to source voltage (Vdss) of the FDC640P_F095 is 20 V.
  4. What is the gate to source voltage range (Vgs) of the FDC640P_F095? The gate to source voltage range (Vgs) of the FDC640P_F095 is -12 V to +12 V.
  5. Is the FDC640P_F095 still in production? The FDC640P_F095 is listed as obsolete on some supplier websites.
  6. What technology is used in the FDC640P_F095? The FDC640P_F095 uses advanced PowerTrench technology.
  7. What type of channel does the FDC640P_F095 have? The FDC640P_F095 has a P-Channel configuration.
  8. What are some common applications of the FDC640P_F095? Common applications include power supplies, motor control, audio amplifiers, industrial control, and automotive electronics.
  9. Where can I find the datasheet for the FDC640P_F095? The datasheet for the FDC640P_F095 can be found on supplier websites such as Mouser and Digi-Key.
  10. What is the significance of the PowerTrench technology in the FDC640P_F095? The PowerTrench technology enhances power efficiency and reduces thermal resistance, making the device more reliable and efficient in high-power applications.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:53mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:890 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Same Series
FDC640P_F095
FDC640P_F095
MOSFET P-CH 20V 4.5A SUPERSOT6

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