FDC637ANNB5E023A
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onsemi FDC637ANNB5E023A

Manufacturer No:
FDC637ANNB5E023A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 6.2A SSOT-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC637ANNB5E023A is a high-performance N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This device is designed to offer exceptional power dissipation in a compact SUPERSOT-6 package, making it ideal for applications requiring low on-state resistance and fast switching speeds.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDSS)20V
Gate-Source Voltage (VGSS)±8V
Continuous Drain Current (ID)6.2A
Pulsed Drain Current (ID)20A
Power Dissipation (PD)1.6 (Continuous), 0.8 (Pulsed)W
Operating Junction Temperature (TJ)-55 to +150°C
Static Drain-Source On-Resistance (RDS(on)) @ VGS = 4.5V0.024 ΩΩ
Static Drain-Source On-Resistance (RDS(on)) @ VGS = 2.5V0.032 ΩΩ
Gate Threshold Voltage (VGS(th))0.4 to 1.5V
Thermal Resistance, Junction-to-Ambient (RJA)78 °C/W°C/W

Key Features

  • High performance trench technology for extremely low RDS(on)
  • Fast switching speed
  • Low gate charge (10.5 nC typical)
  • SUPERSOT-6 package: small footprint, low profile (1 mm thick)
  • Pb-free, halide-free, and RoHS compliant

Applications

  • DC/DC converters
  • Load switches
  • Battery protection

Q & A

  1. What is the maximum drain-source voltage of the FDC637ANNB5E023A MOSFET? The maximum drain-source voltage is 20 V.
  2. What is the continuous drain current rating of this MOSFET? The continuous drain current rating is 6.2 A.
  3. What is the typical on-state resistance at VGS = 4.5 V? The typical on-state resistance at VGS = 4.5 V is 0.024 Ω.
  4. What is the thermal resistance, junction-to-ambient, for this device? The thermal resistance, junction-to-ambient, is 78 °C/W.
  5. Is the FDC637ANNB5E023A MOSFET RoHS compliant? Yes, it is Pb-free, halide-free, and RoHS compliant.
  6. What are the typical applications for this MOSFET? Typical applications include DC/DC converters, load switches, and battery protection.
  7. What is the gate threshold voltage range for this MOSFET? The gate threshold voltage range is from 0.4 to 1.5 V.
  8. What is the maximum gate-source voltage rating? The maximum gate-source voltage rating is ±8 V.
  9. How does the SUPERSOT-6 package benefit the design? The SUPERSOT-6 package offers a small footprint and low profile, making it ideal for compact designs.
  10. What is the typical gate charge for this MOSFET? The typical gate charge is 10.5 nC.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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