Overview
The FDC637ANNB5E023A is a high-performance N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This device is designed to offer exceptional power dissipation in a compact SUPERSOT-6 package, making it ideal for applications requiring low on-state resistance and fast switching speeds.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Voltage (VDSS) | 20 | V |
Gate-Source Voltage (VGSS) | ±8 | V |
Continuous Drain Current (ID) | 6.2 | A |
Pulsed Drain Current (ID) | 20 | A |
Power Dissipation (PD) | 1.6 (Continuous), 0.8 (Pulsed) | W |
Operating Junction Temperature (TJ) | -55 to +150 | °C |
Static Drain-Source On-Resistance (RDS(on)) @ VGS = 4.5V | 0.024 Ω | Ω |
Static Drain-Source On-Resistance (RDS(on)) @ VGS = 2.5V | 0.032 Ω | Ω |
Gate Threshold Voltage (VGS(th)) | 0.4 to 1.5 | V |
Thermal Resistance, Junction-to-Ambient (RJA) | 78 °C/W | °C/W |
Key Features
- High performance trench technology for extremely low RDS(on)
- Fast switching speed
- Low gate charge (10.5 nC typical)
- SUPERSOT-6 package: small footprint, low profile (1 mm thick)
- Pb-free, halide-free, and RoHS compliant
Applications
- DC/DC converters
- Load switches
- Battery protection
Q & A
- What is the maximum drain-source voltage of the FDC637ANNB5E023A MOSFET? The maximum drain-source voltage is 20 V.
- What is the continuous drain current rating of this MOSFET? The continuous drain current rating is 6.2 A.
- What is the typical on-state resistance at VGS = 4.5 V? The typical on-state resistance at VGS = 4.5 V is 0.024 Ω.
- What is the thermal resistance, junction-to-ambient, for this device? The thermal resistance, junction-to-ambient, is 78 °C/W.
- Is the FDC637ANNB5E023A MOSFET RoHS compliant? Yes, it is Pb-free, halide-free, and RoHS compliant.
- What are the typical applications for this MOSFET? Typical applications include DC/DC converters, load switches, and battery protection.
- What is the gate threshold voltage range for this MOSFET? The gate threshold voltage range is from 0.4 to 1.5 V.
- What is the maximum gate-source voltage rating? The maximum gate-source voltage rating is ±8 V.
- How does the SUPERSOT-6 package benefit the design? The SUPERSOT-6 package offers a small footprint and low profile, making it ideal for compact designs.
- What is the typical gate charge for this MOSFET? The typical gate charge is 10.5 nC.