FDC637ANNB5E023A
  • Share:

onsemi FDC637ANNB5E023A

Manufacturer No:
FDC637ANNB5E023A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 6.2A SSOT-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC637ANNB5E023A is a high-performance N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This device is designed to offer exceptional power dissipation in a compact SUPERSOT-6 package, making it ideal for applications requiring low on-state resistance and fast switching speeds.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDSS)20V
Gate-Source Voltage (VGSS)±8V
Continuous Drain Current (ID)6.2A
Pulsed Drain Current (ID)20A
Power Dissipation (PD)1.6 (Continuous), 0.8 (Pulsed)W
Operating Junction Temperature (TJ)-55 to +150°C
Static Drain-Source On-Resistance (RDS(on)) @ VGS = 4.5V0.024 ΩΩ
Static Drain-Source On-Resistance (RDS(on)) @ VGS = 2.5V0.032 ΩΩ
Gate Threshold Voltage (VGS(th))0.4 to 1.5V
Thermal Resistance, Junction-to-Ambient (RJA)78 °C/W°C/W

Key Features

  • High performance trench technology for extremely low RDS(on)
  • Fast switching speed
  • Low gate charge (10.5 nC typical)
  • SUPERSOT-6 package: small footprint, low profile (1 mm thick)
  • Pb-free, halide-free, and RoHS compliant

Applications

  • DC/DC converters
  • Load switches
  • Battery protection

Q & A

  1. What is the maximum drain-source voltage of the FDC637ANNB5E023A MOSFET? The maximum drain-source voltage is 20 V.
  2. What is the continuous drain current rating of this MOSFET? The continuous drain current rating is 6.2 A.
  3. What is the typical on-state resistance at VGS = 4.5 V? The typical on-state resistance at VGS = 4.5 V is 0.024 Ω.
  4. What is the thermal resistance, junction-to-ambient, for this device? The thermal resistance, junction-to-ambient, is 78 °C/W.
  5. Is the FDC637ANNB5E023A MOSFET RoHS compliant? Yes, it is Pb-free, halide-free, and RoHS compliant.
  6. What are the typical applications for this MOSFET? Typical applications include DC/DC converters, load switches, and battery protection.
  7. What is the gate threshold voltage range for this MOSFET? The gate threshold voltage range is from 0.4 to 1.5 V.
  8. What is the maximum gate-source voltage rating? The maximum gate-source voltage rating is ±8 V.
  9. How does the SUPERSOT-6 package benefit the design? The SUPERSOT-6 package offers a small footprint and low profile, making it ideal for compact designs.
  10. What is the typical gate charge for this MOSFET? The typical gate charge is 10.5 nC.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
501

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S50TX/AA
DD44S32S50TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

BAW56LT3G
BAW56LT3G
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP