FDC5614P-G
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onsemi FDC5614P-G

Manufacturer No:
FDC5614P-G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC5614P-G is a 60 V P-Channel MOSFET developed by onsemi, utilizing their high voltage PowerTrench® process. This device is optimized for power management applications, offering high performance and efficiency. It is designed to operate with low on-resistance and fast switching speeds, making it suitable for a variety of power management tasks.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDSS)-60V
Gate-Source Voltage (VGSS)±20V
Continuous Drain Current (ID)-3A
Pulsed Drain Current (ID)-20A
Maximum Power Dissipation (PD)1.6W
On-Resistance (RDS(on)) at VGS = -10 V0.105 ΩΩ
On-Resistance (RDS(on)) at VGS = -4.5 V0.135 ΩΩ
Operating and Storage Junction Temperature Range (TJ, TSTG)-55 to 150 °C°C
Thermal Resistance, Junction-to-Ambient (RJA)78 °C/W°C/W
Thermal Resistance, Junction-to-Case (RJC)30 °C/W°C/W

Key Features

  • High voltage PowerTrench® process for low on-resistance and high performance.
  • Fast switching speed, enhancing efficiency in power management applications.
  • Logic level gate drive, making it compatible with a wide range of control signals.
  • Pb-Free and Halide Free, ensuring environmental compliance.
  • High current handling capability, suitable for demanding applications.

Applications

  • DC-DC Converters: Ideal for high-efficiency power conversion.
  • Load Switch: Used in applications requiring high current and low on-resistance.
  • Power Management: Optimized for various power management tasks, including voltage regulation and power switching.

Q & A

  1. What is the maximum drain-source voltage of the FDC5614P-G MOSFET?
    The maximum drain-source voltage (VDSS) is -60 V.
  2. What is the continuous drain current rating of the FDC5614P-G?
    The continuous drain current (ID) is -3 A.
  3. What is the on-resistance of the FDC5614P-G at VGS = -10 V?
    The on-resistance (RDS(on)) at VGS = -10 V is 0.105 Ω.
  4. What are the typical applications of the FDC5614P-G MOSFET?
    Typical applications include DC-DC converters, load switches, and power management.
  5. Is the FDC5614P-G Pb-Free and Halide Free?
    Yes, the FDC5614P-G is Pb-Free and Halide Free.
  6. What is the thermal resistance, junction-to-ambient (RJA), of the FDC5614P-G?
    The thermal resistance, junction-to-ambient (RJA), is 78 °C/W.
  7. What is the operating and storage junction temperature range of the FDC5614P-G?
    The operating and storage junction temperature range is -55 to 150 °C.
  8. What package type is the FDC5614P-G available in?
    The FDC5614P-G is available in the TSOT-23-6 (SUPERSOT-6) package.
  9. What are the key features of the PowerTrench® process used in the FDC5614P-G?
    The PowerTrench® process offers high performance, low on-resistance, and fast switching speeds.
  10. Is the FDC5614P-G suitable for high current handling?
    Yes, the FDC5614P-G is designed for high current handling capability.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:105mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:759 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):800mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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