Overview
The FDC5612-G is an N-Channel MOSFET designed by onsemi, specifically to enhance the efficiency of DC/DC converters. This device is part of the POWERTRENCH® 60 V series and is optimized for use in synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge, making it easier and safer to drive, even at high frequencies. This results in higher overall efficiency in DC/DC power supply designs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 60 | V |
| Gate-Source Voltage (VGSS) | ±20 | V |
| Continuous Drain Current (ID) | 4.3 | A |
| Pulsed Drain Current (ID) | 20 | A |
| Power Dissipation (PD) | 1.6 / 0.8 | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Static Drain-Source On-Resistance (RDS(ON)) at VGS = 10 V | 0.055 Ω | Ω |
| Static Drain-Source On-Resistance (RDS(ON)) at VGS = 6 V | 0.064 Ω | Ω |
| Gate Threshold Voltage (VGS(th)) | 2 to 4 | V |
| Total Gate Charge (Qg) | 12.5 nC | nC |
| Turn-On Delay Time (td(on)) | 11 to 20 ns | ns |
| Turn-Off Delay Time (td(off)) | 19 to 35 ns | ns |
Key Features
- Faster switching and lower gate charge compared to other MOSFETs with similar RDS(ON) specifications.
- High performance trench technology for extremely low RDS(ON).
- SUPERSOTTM-6 package: small footprint (72% smaller than standard SO-8) and low profile (1mm thick).
- Pb-Free and Halide Free device.
- Optimized for use in high frequency DC/DC converters.
Applications
- DC/DC converters using synchronous or conventional switching PWM controllers.
- High frequency power supply designs.
- Power management systems requiring high efficiency and fast switching.
Q & A
- What is the maximum drain-source voltage (VDSS) of the FDC5612-G MOSFET?
The maximum drain-source voltage (VDSS) is 60 V.
- What is the continuous drain current (ID) rating of the FDC5612-G?
The continuous drain current (ID) rating is 4.3 A.
- What is the typical static drain-source on-resistance (RDS(ON)) at VGS = 10 V?
The typical static drain-source on-resistance (RDS(ON)) at VGS = 10 V is 0.055 Ω.
- What is the total gate charge (Qg) of the FDC5612-G?
The total gate charge (Qg) is 12.5 nC.
- Is the FDC5612-G Pb-Free and Halide Free?
- What package type is used for the FDC5612-G?
The FDC5612-G uses the SUPERSOTTM-6 package.
- What are the typical turn-on and turn-off delay times for the FDC5612-G?
The typical turn-on delay time is 11 to 20 ns, and the typical turn-off delay time is 19 to 35 ns.
- What is the operating and storage junction temperature range for the FDC5612-G?
The operating and storage junction temperature range is -55 to +150 °C.
- What are the primary applications of the FDC5612-G MOSFET?
The primary applications include DC/DC converters using synchronous or conventional switching PWM controllers and high frequency power supply designs.
- How does the FDC5612-G improve the efficiency of DC/DC converters?
The FDC5612-G improves the efficiency of DC/DC converters through its faster switching and lower gate charge, resulting in higher overall efficiency in power supply designs.
