FDC3601N
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onsemi FDC3601N

Manufacturer No:
FDC3601N
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 100V 1A SSOT-6
Delivery:
Payment:
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Product Introduction

Overview

The FDC3601N is a dual N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This device is designed to offer exceptional power dissipation in a compact footprint, making it ideal for applications where larger packages are impractical. The FDC3601N features low on-state resistance and low gate charge, ensuring superior switching performance.

Key Specifications

ParameterRatingUnit
Drain-Source Voltage (VDSS)100V
Gate-Source Voltage (VGSS)±20V
Continuous Drain Current (ID)1.0A
Pulsed Drain Current (ID)4.0A
Power Dissipation (PD)0.96W
Operating and Storage Temperature Range (TJ, TSTG)-55 to +150°C
On-State Resistance (RDS(ON)) at VGS = 10 V500 mΩ
On-State Resistance (RDS(ON)) at VGS = 6.0 V550 mΩ
Gate Threshold Voltage (VGS(th))2 to 4 VV
Thermal Resistance, Junction-to-Ambient (RθJA)130 °C/W°C/W
Thermal Resistance, Junction-to-Case (RθJC)60 °C/W°C/W

Key Features

  • Low on-state resistance (RDS(ON) = 500 mΩ @ VGS = 10 V, RDS(ON) = 550 mΩ @ VGS = 6.0 V)
  • Low gate charge (3.7 nC typical)
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • SUPERSOT-6 package: small footprint, low profile (1 mm thick)
  • Pb-free device

Applications

  • Load switch
  • Battery protection
  • Power management

Q & A

  1. What is the maximum drain-source voltage of the FDC3601N?
    The maximum drain-source voltage (VDSS) is 100 V.
  2. What is the continuous drain current rating of the FDC3601N?
    The continuous drain current (ID) is 1.0 A.
  3. What is the on-state resistance of the FDC3601N at VGS = 10 V?
    The on-state resistance (RDS(ON)) at VGS = 10 V is 500 mΩ.
  4. What is the thermal resistance, junction-to-ambient, of the FDC3601N?
    The thermal resistance, junction-to-ambient (RθJA), is 130 °C/W.
  5. Is the FDC3601N a Pb-free device?
    Yes, the FDC3601N is a Pb-free device.
  6. What is the package type of the FDC3601N?
    The package type is SUPERSOT-6.
  7. What are the typical applications of the FDC3601N?
    The typical applications include load switch, battery protection, and power management.
  8. What is the gate threshold voltage range of the FDC3601N?
    The gate threshold voltage (VGS(th)) range is 2 to 4 V.
  9. What is the maximum power dissipation of the FDC3601N?
    The maximum power dissipation (PD) is 0.96 W.
  10. What is the operating and storage temperature range of the FDC3601N?
    The operating and storage temperature range (TJ, TSTG) is -55 to +150 °C.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:1A
Rds On (Max) @ Id, Vgs:500mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:153pF @ 50V
Power - Max:700mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:SuperSOT™-6
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