Overview
The FDB44N25TM is a high-voltage N-Channel MOSFET from onsemi, part of the UniFET™ family. This device is designed using Fairchild Semiconductor's proprietary planar stripe and DMOS technology, which minimizes on-state resistance and enhances switching performance. It is particularly suited for high-efficiency switched mode power supplies and active power factor correction applications. The FDB44N25TM offers superior avalanche energy strength and fast switching capabilities, making it a reliable choice for various power conversion tasks.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Channel Type | N | |
| Maximum Continuous Drain Current | 44 A | A |
| Maximum Drain-Source Voltage | 250 V | V |
| On-State Resistance (RDS(on)) | 69 mΩ (Max.) @ VGS = 10 V, ID = 22 A | mΩ |
| Typical Gate Charge (Qg) | 47 nC @ VGS = 10 V | nC |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Minimum Gate Threshold Voltage | 3 V | V |
| Maximum Power Dissipation | 307 W | W |
| Maximum Operating Temperature | +150 °C | °C |
| Minimum Operating Temperature | -55 °C | °C |
| Length | 10.67 mm | mm |
| Width | 11.33 mm | mm |
| Height | 4.83 mm | mm |
Key Features
- Low on-state resistance (RDS(on) = 69 mΩ @ VGS = 10 V, ID = 22 A)
- Low gate charge (Typical 47 nC)
- Low Crss (Typical 60 pF)
- Fast switching capabilities
- 100% avalanche tested
- Improved dv/dt capability
- Internal gate-source ESD diode to withstand over 2000V HBM surge stress
Applications
- Switching power converter applications
- Power factor correction (PFC)
- Flat panel display (FPD) TV power
- ATX (Advanced Technology eXtended) power supplies
- Electronic lamp ballasts
- Uninterruptible power supplies (UPS)
- AC-DC power supplies
Q & A
- What is the maximum continuous drain current of the FDB44N25TM MOSFET?
The maximum continuous drain current is 44 A.
- What is the maximum drain-source voltage of the FDB44N25TM MOSFET?
The maximum drain-source voltage is 250 V.
- What is the typical gate charge of the FDB44N25TM MOSFET?
The typical gate charge is 47 nC at VGS = 10 V.
- What is the package type of the FDB44N25TM MOSFET?
The package type is D2PAK (TO-263).
- What are the operating temperature ranges for the FDB44N25TM MOSFET?
The operating temperature range is from -55 °C to +150 °C.
- What are some common applications for the FDB44N25TM MOSFET?
Common applications include power factor correction (PFC), flat panel display (FPD) TV power, ATX power supplies, and electronic lamp ballasts.
- Does the FDB44N25TM MOSFET have any special protection features?
Yes, it has an internal gate-source ESD diode that can withstand over 2000V HBM surge stress.
- What is the maximum power dissipation of the FDB44N25TM MOSFET?
The maximum power dissipation is 307 W.
- How many pins does the FDB44N25TM MOSFET have?
The FDB44N25TM MOSFET has 3 pins.
- What is the minimum gate threshold voltage of the FDB44N25TM MOSFET?
The minimum gate threshold voltage is 3 V.
