Overview
The FDB3632 is a high-performance N-Channel PowerTrench MOSFET produced by onsemi. This device is designed for various power management applications, offering a combination of low on-resistance, high current handling, and robust thermal characteristics. The FDB3632 is available in the TO-263AB package and is RoHS compliant, making it suitable for a wide range of industrial and automotive applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain to Source Voltage (Vdss) | 100 | V |
Drain Current (ID) - Continuous | 80 | A |
Gate to Source Voltage (VGS) | ±20 | V |
Drain-Source On Resistance (Rds(on)) | 7.5 mΩ (Typ.) at VGS = 10 V, ID = 80 A | mΩ |
Gate Charge (Qg) | 84 nC (Typ.) at VGS = 10 V | nC |
Thermal Resistance, Junction to Case (RθJC) | 0.48 °C/W | °C/W |
Thermal Resistance, Junction to Ambient (RθJA) | 62 °C/W (TO-220) | °C/W |
Package Style | TO-263AB | |
Mounting Method | Surface Mount |
Key Features
- Low Rds(on) of 7.5 mΩ (Typ.) at VGS = 10 V, ID = 80 A
- Low Miller Charge and Low QRR Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101
- Rohs Compliant
Applications
- DC/DC converters and Off-Line UPS
- Distributed Power Architectures and VRMs
- Primary Switch for 24V and 48V Systems
- High Voltage Synchronous Rectifier
- Direct Injection / Diesel Injection Systems
- 42V Automotive Load Control
- Electronic Valve Train Systems
- Synchronous Rectification
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supplies
- Micro Solar Inverter
Q & A
- What is the maximum drain to source voltage of the FDB3632 MOSFET?
The maximum drain to source voltage (Vdss) is 100 V. - What is the typical on-resistance of the FDB3632?
The typical on-resistance (Rds(on)) is 7.5 mΩ at VGS = 10 V, ID = 80 A. - What is the gate charge of the FDB3632?
The gate charge (Qg) is 84 nC (Typ.) at VGS = 10 V. - Is the FDB3632 RoHS compliant?
Yes, the FDB3632 is RoHS compliant. - What are the common applications of the FDB3632?
The FDB3632 is commonly used in DC/DC converters, Off-Line UPS, Distributed Power Architectures, VRMs, and various automotive and industrial applications. - What is the thermal resistance, junction to case (RθJC), of the FDB3632?
The thermal resistance, junction to case (RθJC), is 0.48 °C/W. - What is the package style of the FDB3632?
The package style is TO-263AB. - Does the FDB3632 have UIS capability?
Yes, the FDB3632 has UIS capability for both single pulse and repetitive pulse. - Is the FDB3632 qualified to AEC Q101?
Yes, the FDB3632 is qualified to AEC Q101. - What is the mounting method of the FDB3632?
The mounting method is surface mount.