FDB3632
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onsemi FDB3632

Manufacturer No:
FDB3632
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 12A/80A D2PAK
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The FDB3632 is a high-performance N-Channel PowerTrench MOSFET produced by onsemi. This device is designed for various power management applications, offering a combination of low on-resistance, high current handling, and robust thermal characteristics. The FDB3632 is available in the TO-263AB package and is RoHS compliant, making it suitable for a wide range of industrial and automotive applications.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (Vdss)100V
Drain Current (ID) - Continuous80A
Gate to Source Voltage (VGS)±20V
Drain-Source On Resistance (Rds(on))7.5 mΩ (Typ.) at VGS = 10 V, ID = 80 A
Gate Charge (Qg)84 nC (Typ.) at VGS = 10 VnC
Thermal Resistance, Junction to Case (RθJC)0.48 °C/W°C/W
Thermal Resistance, Junction to Ambient (RθJA)62 °C/W (TO-220)°C/W
Package StyleTO-263AB
Mounting MethodSurface Mount

Key Features

  • Low Rds(on) of 7.5 mΩ (Typ.) at VGS = 10 V, ID = 80 A
  • Low Miller Charge and Low QRR Body Diode
  • UIS Capability (Single Pulse and Repetitive Pulse)
  • Qualified to AEC Q101
  • Rohs Compliant

Applications

  • DC/DC converters and Off-Line UPS
  • Distributed Power Architectures and VRMs
  • Primary Switch for 24V and 48V Systems
  • High Voltage Synchronous Rectifier
  • Direct Injection / Diesel Injection Systems
  • 42V Automotive Load Control
  • Electronic Valve Train Systems
  • Synchronous Rectification
  • Battery Protection Circuit
  • Motor Drives and Uninterruptible Power Supplies
  • Micro Solar Inverter

Q & A

  1. What is the maximum drain to source voltage of the FDB3632 MOSFET?
    The maximum drain to source voltage (Vdss) is 100 V.
  2. What is the typical on-resistance of the FDB3632?
    The typical on-resistance (Rds(on)) is 7.5 mΩ at VGS = 10 V, ID = 80 A.
  3. What is the gate charge of the FDB3632?
    The gate charge (Qg) is 84 nC (Typ.) at VGS = 10 V.
  4. Is the FDB3632 RoHS compliant?
    Yes, the FDB3632 is RoHS compliant.
  5. What are the common applications of the FDB3632?
    The FDB3632 is commonly used in DC/DC converters, Off-Line UPS, Distributed Power Architectures, VRMs, and various automotive and industrial applications.
  6. What is the thermal resistance, junction to case (RθJC), of the FDB3632?
    The thermal resistance, junction to case (RθJC), is 0.48 °C/W.
  7. What is the package style of the FDB3632?
    The package style is TO-263AB.
  8. Does the FDB3632 have UIS capability?
    Yes, the FDB3632 has UIS capability for both single pulse and repetitive pulse.
  9. Is the FDB3632 qualified to AEC Q101?
    Yes, the FDB3632 is qualified to AEC Q101.
  10. What is the mounting method of the FDB3632?
    The mounting method is surface mount.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):310W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
FDH3632
FDH3632
MOSFET N-CH 100V 12A/80A TO247-3
FDP3632
FDP3632
MOSFET N-CH 100V 12A/80A TO220-3

Similar Products

Part Number FDB3632 FDB3682 FDB3672 FDB3652
Manufacturer onsemi onsemi Fairchild Semiconductor onsemi
Product Status Active Active Obsolete Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 80A (Tc) 6A (Ta), 32A (Tc) 7.2A (Ta), 44A (Tc) 9A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 80A, 10V 36mOhm @ 32A, 10V 28mOhm @ 44A, 10V 16mOhm @ 61A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 28 nC @ 10 V 31 nC @ 10 V 53 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 25 V 1250 pF @ 25 V 1710 pF @ 25 V 2880 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 310W (Tc) 95W (Tc) 120W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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