FDB3632
  • Share:

onsemi FDB3632

Manufacturer No:
FDB3632
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 12A/80A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDB3632 is a high-performance N-Channel PowerTrench MOSFET produced by onsemi. This device is designed for various power management applications, offering a combination of low on-resistance, high current handling, and robust thermal characteristics. The FDB3632 is available in the TO-263AB package and is RoHS compliant, making it suitable for a wide range of industrial and automotive applications.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (Vdss)100V
Drain Current (ID) - Continuous80A
Gate to Source Voltage (VGS)±20V
Drain-Source On Resistance (Rds(on))7.5 mΩ (Typ.) at VGS = 10 V, ID = 80 A
Gate Charge (Qg)84 nC (Typ.) at VGS = 10 VnC
Thermal Resistance, Junction to Case (RθJC)0.48 °C/W°C/W
Thermal Resistance, Junction to Ambient (RθJA)62 °C/W (TO-220)°C/W
Package StyleTO-263AB
Mounting MethodSurface Mount

Key Features

  • Low Rds(on) of 7.5 mΩ (Typ.) at VGS = 10 V, ID = 80 A
  • Low Miller Charge and Low QRR Body Diode
  • UIS Capability (Single Pulse and Repetitive Pulse)
  • Qualified to AEC Q101
  • Rohs Compliant

Applications

  • DC/DC converters and Off-Line UPS
  • Distributed Power Architectures and VRMs
  • Primary Switch for 24V and 48V Systems
  • High Voltage Synchronous Rectifier
  • Direct Injection / Diesel Injection Systems
  • 42V Automotive Load Control
  • Electronic Valve Train Systems
  • Synchronous Rectification
  • Battery Protection Circuit
  • Motor Drives and Uninterruptible Power Supplies
  • Micro Solar Inverter

Q & A

  1. What is the maximum drain to source voltage of the FDB3632 MOSFET?
    The maximum drain to source voltage (Vdss) is 100 V.
  2. What is the typical on-resistance of the FDB3632?
    The typical on-resistance (Rds(on)) is 7.5 mΩ at VGS = 10 V, ID = 80 A.
  3. What is the gate charge of the FDB3632?
    The gate charge (Qg) is 84 nC (Typ.) at VGS = 10 V.
  4. Is the FDB3632 RoHS compliant?
    Yes, the FDB3632 is RoHS compliant.
  5. What are the common applications of the FDB3632?
    The FDB3632 is commonly used in DC/DC converters, Off-Line UPS, Distributed Power Architectures, VRMs, and various automotive and industrial applications.
  6. What is the thermal resistance, junction to case (RθJC), of the FDB3632?
    The thermal resistance, junction to case (RθJC), is 0.48 °C/W.
  7. What is the package style of the FDB3632?
    The package style is TO-263AB.
  8. Does the FDB3632 have UIS capability?
    Yes, the FDB3632 has UIS capability for both single pulse and repetitive pulse.
  9. Is the FDB3632 qualified to AEC Q101?
    Yes, the FDB3632 is qualified to AEC Q101.
  10. What is the mounting method of the FDB3632?
    The mounting method is surface mount.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):310W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$3.42
89

Please send RFQ , we will respond immediately.

Same Series
FDH3632
FDH3632
MOSFET N-CH 100V 12A/80A TO247-3
FDP3632
FDP3632
MOSFET N-CH 100V 12A/80A TO220-3

Similar Products

Part Number FDB3632 FDB3682 FDB3672 FDB3652
Manufacturer onsemi onsemi Fairchild Semiconductor onsemi
Product Status Active Active Obsolete Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 80A (Tc) 6A (Ta), 32A (Tc) 7.2A (Ta), 44A (Tc) 9A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 80A, 10V 36mOhm @ 32A, 10V 28mOhm @ 44A, 10V 16mOhm @ 61A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 28 nC @ 10 V 31 nC @ 10 V 53 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 25 V 1250 pF @ 25 V 1710 pF @ 25 V 2880 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 310W (Tc) 95W (Tc) 120W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
NTD3055L170-1G
NTD3055L170-1G
onsemi
MOSFET N-CH 60V 9A IPAK
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP