FDB1D7N10CL7
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onsemi FDB1D7N10CL7

Manufacturer No:
FDB1D7N10CL7
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 268A D2PAK
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The FDB1D7N10CL7 is a high-performance N-Channel MOSFET produced by onsemi. This device is part of the low to medium voltage MOSFET family and is designed to provide high current handling and low on-resistance. It is packaged in a D2PAK (TO-263) package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
ID (Continuous Drain Current)268 A
RDS(ON) (On-Resistance)1.7 mΩ
VGS (Gate-Source Voltage)±20 V
PD (Power Dissipation)Dependent on package and thermal conditions
PackageD2PAK (TO-263)

Key Features

  • High current handling capability of up to 268 A.
  • Low on-resistance of 1.7 mΩ, reducing power losses.
  • Standard gate drive, compatible with a wide range of gate drivers.
  • D2PAK (TO-263) package for efficient heat dissipation and compact design.
  • Suitable for high-frequency switching applications due to its low gate charge and fast switching times.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-power switching and amplification.
  • Automotive and industrial power management systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the FDB1D7N10CL7 MOSFET? The maximum drain-source voltage is 100 V.
  2. What is the continuous drain current rating of the FDB1D7N10CL7? The continuous drain current rating is 268 A.
  3. What is the on-resistance of the FDB1D7N10CL7? The on-resistance is 1.7 mΩ.
  4. In what package is the FDB1D7N10CL7 available? The FDB1D7N10CL7 is available in a D2PAK (TO-263) package.
  5. What are some typical applications for the FDB1D7N10CL7? Typical applications include power supplies, motor control systems, high-power switching, and automotive/industrial power management.
  6. What is the maximum gate-source voltage for the FDB1D7N10CL7? The maximum gate-source voltage is ±20 V.
  7. Why is the FDB1D7N10CL7 suitable for high-frequency switching applications? It is suitable due to its low gate charge and fast switching times.
  8. What is the standard lead time for the FDB1D7N10CL7 from onsemi? The standard lead time is 14 weeks.
  9. Where can I find detailed specifications for the FDB1D7N10CL7? Detailed specifications can be found in the datasheet available on onsemi’s official website and through distributors like DigiKey.
  10. Is the FDB1D7N10CL7 suitable for renewable energy applications? Yes, it is suitable for renewable energy systems such as solar and wind power inverters.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:268A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 15V
Rds On (Max) @ Id, Vgs:1.65mOhm @ 100A, 15V
Vgs(th) (Max) @ Id:4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:163 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11600 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK (TO-263)
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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