FDB1D7N10CL7
  • Share:

onsemi FDB1D7N10CL7

Manufacturer No:
FDB1D7N10CL7
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 268A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDB1D7N10CL7 is a high-performance N-Channel MOSFET produced by onsemi. This device is part of the low to medium voltage MOSFET family and is designed to provide high current handling and low on-resistance. It is packaged in a D2PAK (TO-263) package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
ID (Continuous Drain Current)268 A
RDS(ON) (On-Resistance)1.7 mΩ
VGS (Gate-Source Voltage)±20 V
PD (Power Dissipation)Dependent on package and thermal conditions
PackageD2PAK (TO-263)

Key Features

  • High current handling capability of up to 268 A.
  • Low on-resistance of 1.7 mΩ, reducing power losses.
  • Standard gate drive, compatible with a wide range of gate drivers.
  • D2PAK (TO-263) package for efficient heat dissipation and compact design.
  • Suitable for high-frequency switching applications due to its low gate charge and fast switching times.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-power switching and amplification.
  • Automotive and industrial power management systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the FDB1D7N10CL7 MOSFET? The maximum drain-source voltage is 100 V.
  2. What is the continuous drain current rating of the FDB1D7N10CL7? The continuous drain current rating is 268 A.
  3. What is the on-resistance of the FDB1D7N10CL7? The on-resistance is 1.7 mΩ.
  4. In what package is the FDB1D7N10CL7 available? The FDB1D7N10CL7 is available in a D2PAK (TO-263) package.
  5. What are some typical applications for the FDB1D7N10CL7? Typical applications include power supplies, motor control systems, high-power switching, and automotive/industrial power management.
  6. What is the maximum gate-source voltage for the FDB1D7N10CL7? The maximum gate-source voltage is ±20 V.
  7. Why is the FDB1D7N10CL7 suitable for high-frequency switching applications? It is suitable due to its low gate charge and fast switching times.
  8. What is the standard lead time for the FDB1D7N10CL7 from onsemi? The standard lead time is 14 weeks.
  9. Where can I find detailed specifications for the FDB1D7N10CL7? Detailed specifications can be found in the datasheet available on onsemi’s official website and through distributors like DigiKey.
  10. Is the FDB1D7N10CL7 suitable for renewable energy applications? Yes, it is suitable for renewable energy systems such as solar and wind power inverters.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:268A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 15V
Rds On (Max) @ Id, Vgs:1.65mOhm @ 100A, 15V
Vgs(th) (Max) @ Id:4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:163 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11600 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK (TO-263)
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
0 Remaining View Similar

In Stock

$5.01
192

Please send RFQ , we will respond immediately.

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG

Related Product By Brand

2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
MC74AC273DTR2G
MC74AC273DTR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20TSSOP
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC