FDB110N15A
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onsemi FDB110N15A

Manufacturer No:
FDB110N15A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 92A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDB110N15A is an N-Channel PowerTrench® MOSFET produced by onsemi (formerly Fairchild Semiconductor). This device is designed using an advanced PowerTrench process, which minimizes on-state resistance while maintaining superior switching performance. Although the FDB110N15A is currently discontinued, it remains a reference point for its technological advancements and performance characteristics.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)150 V
VGS (Gate-Source Voltage)±20 V
RDS(ON) (On-State Resistance)110 mΩ (Typical at VGS = 10 V)
ID (Continuous Drain Current)20 A
IDM (Pulse Drain Current)40 A
TJ (Junction Temperature)-55°C to 150°C
TSTG (Storage Temperature)-55°C to 150°C

Key Features

  • Advanced PowerTrench process for low on-state resistance and superior switching performance.
  • High current handling capability with a continuous drain current of 20 A and a pulse drain current of 40 A.
  • Wide operating temperature range from -55°C to 150°C.
  • Low gate charge for efficient switching.
  • Robust and reliable design suitable for various power management applications.

Applications

The FDB110N15A N-Channel MOSFET is suitable for a variety of power management and switching applications, including but not limited to:

  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Power amplifiers and audio systems.
  • Automotive and industrial power systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the FDB110N15A?
    The maximum drain-source voltage (VDS) is 150 V.
  2. What is the typical on-state resistance (RDS(ON)) of the FDB110N15A?
    The typical on-state resistance (RDS(ON)) is 110 mΩ at VGS = 10 V.
  3. What is the continuous drain current (ID) of the FDB110N15A?
    The continuous drain current (ID) is 20 A.
  4. What is the pulse drain current (IDM) of the FDB110N15A?
    The pulse drain current (IDM) is 40 A.
  5. What is the junction temperature range of the FDB110N15A?
    The junction temperature range is -55°C to 150°C.
  6. Is the FDB110N15A still in production?
    No, the FDB110N15A is discontinued by onsemi (formerly Fairchild Semiconductor).
  7. What process is used to manufacture the FDB110N15A?
    The FDB110N15A is manufactured using the advanced PowerTrench process.
  8. What are some common applications for the FDB110N15A?
    Common applications include DC-DC converters, motor control systems, power amplifiers, and automotive/industrial power systems.
  9. What is the gate-source voltage (VGS) range for the FDB110N15A?
    The gate-source voltage (VGS) range is ±20 V.
  10. Where can I find detailed specifications for the FDB110N15A?
    Detailed specifications can be found in the datasheets available on the onsemi website, Mouser Electronics, and other electronic component distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:92A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 92A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4510 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):234W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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