Overview
The FDB070AN06A0 is an N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. It features a drain-source voltage (VDS) of 60V, a continuous drain current (ID) of up to 80A at case temperature (TC), and a typical on-resistance (RDS(ON)) of 6.1mΩ at VGS = 10V and ID = 80A. The MOSFET is packaged in a TO-263AB (D2-PAK) package, making it suitable for a variety of power management and control applications.
Key Specifications
| Parameter | Unit | Min | Typ | Max |
|---|---|---|---|---|
| Drain to Source Breakdown Voltage (VDS) | V | 60 | - | - |
| Gate to Source Voltage (VGS) | V | - | - | ±20 |
| Continuous Drain Current (ID) at TA = 25°C | A | - | - | 15 |
| Continuous Drain Current (ID) at TC < 97°C | A | - | - | 80 |
| Power Dissipation (PD) | W | - | - | 175 |
| Gate to Source Threshold Voltage (VGS(TH)) | V | 2 | - | 4 |
| Drain to Source On Resistance (RDS(ON)) at VGS = 10V, ID = 80A | mΩ | - | 6.1 | 7 |
| Total Gate Charge (Qg(TOT)) at VGS = 10V | nC | - | 51 | - |
| Maximum Junction Temperature (TJ) | °C | - | - | 175 |
| Thermal Resistance Junction to Ambient (RθJA) | °C/W | - | - | 43 |
Key Features
- Low on-resistance (RDS(ON)) of 6.1mΩ at VGS = 10V and ID = 80A.
- Low Miller charge and low QRR body diode for efficient switching.
- UIS (Unclamped Inductive Switching) capability for both single pulse and repetitive pulse.
- Qualified to AEC Q101 and RoHS compliant.
- High current handling up to 80A at case temperature (TC).
Applications
- Motor drives and body load control.
- ABS systems and powertrain management.
- Injection systems and DC-DC converters.
- Off-line UPS and distributed power architectures.
- Primary switch for 12V and 24V systems.
- Synchronous rectification for ATX, server, and telecom power supplies.
- Battery protection circuits and uninterruptible power supplies.
Q & A
- What is the maximum drain-source voltage of the FDB070AN06A0 MOSFET?
The maximum drain-source voltage (VDS) is 60V.
- What is the typical on-resistance of the FDB070AN06A0 MOSFET?
The typical on-resistance (RDS(ON)) is 6.1mΩ at VGS = 10V and ID = 80A.
- What is the maximum continuous drain current at case temperature (TC)?
The maximum continuous drain current (ID) at TC is 80A.
- What are the typical applications of the FDB070AN06A0 MOSFET?
Typical applications include motor drives, ABS systems, powertrain management, injection systems, DC-DC converters, and off-line UPS.
- Is the FDB070AN06A0 MOSFET RoHS compliant?
Yes, the FDB070AN06A0 MOSFET is RoHS compliant.
- What is the maximum junction temperature of the FDB070AN06A0 MOSFET?
The maximum junction temperature (TJ) is 175°C.
- What is the thermal resistance junction to ambient (RθJA) of the FDB070AN06A0 MOSFET?
The thermal resistance junction to ambient (RθJA) is 43°C/W.
- Does the FDB070AN06A0 MOSFET have UIS capability?
Yes, the FDB070AN06A0 MOSFET has UIS (Unclamped Inductive Switching) capability for both single pulse and repetitive pulse.
- What is the package type of the FDB070AN06A0 MOSFET?
The package type is TO-263AB (D2-PAK).
- Is the FDB070AN06A0 MOSFET qualified to AEC Q101?
Yes, the FDB070AN06A0 MOSFET is qualified to AEC Q101.
