FDA70N20
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onsemi FDA70N20

Manufacturer No:
FDA70N20
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 200V 70A TO3PN
Delivery:
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Product Introduction

Overview

The FDA70N20 is a high-performance N-Channel MOSFET produced by ON Semiconductor. This device is part of the UniFET™ series and is designed to offer low on-state resistance, enhanced switching performance, and high avalanche energy strength. It is suitable for a variety of applications requiring high current handling and efficient power management.

Key Specifications

Parameter Value Unit
Drain to Source Breakdown Voltage (Vds) 200 V
Continuous Drain Current (Id) 70 A
Pulsed Drain Current (Idm) 280 A
Power Dissipation (Pd) 417 W
On-State Resistance (Rds On) @ Id, Vgs 35 mΩ @ 35A, 10V
Threshold Voltage (Vgs(th)) 5 V @ 250μA V
Gate to Source Voltage (Vgs) ±30 V
Operating Temperature (Tj) -55°C to 150°C °C
Package Type TO-3P-3, SC-65-3
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • Low On-State Resistance: The FDA70N20 features a low Rds On of 35 mΩ at 35A and 10V, enhancing its efficiency in power management.
  • High Avalanche Energy Strength: This MOSFET is designed to handle high avalanche energy, making it robust for demanding applications.
  • Fast Switching: With turn-on and turn-off delay times of 71 ns and 65 ns respectively, this device offers fast switching capabilities.
  • High Current Handling: It can handle a continuous drain current of 70A and a pulsed drain current of up to 280A.
  • Wide Operating Temperature Range: The device operates efficiently over a temperature range of -55°C to 150°C.
  • Environmental Compliance: It is RoHS compliant, lead-free, and does not contain SVHC (Substances of Very High Concern) as per REACH regulations.

Applications

The FDA70N20 is suitable for various high-power applications, including:

  • Power Supplies: High-efficiency power supplies, DC-DC converters, and switch-mode power supplies.
  • Motor Control: Motor drives, servo motors, and other high-current motor control systems.
  • Industrial Automation: Control systems, robotics, and other industrial automation applications.
  • Aerospace and Defense: High-reliability systems requiring robust power management.
  • Automotive Systems: High-power automotive applications such as battery management and electric vehicle systems.

Q & A

  1. What is the maximum drain to source breakdown voltage of the FDA70N20?

    The maximum drain to source breakdown voltage is 200V.

  2. What is the continuous drain current rating of the FDA70N20?

    The continuous drain current rating is 70A.

  3. What is the on-state resistance of the FDA70N20?

    The on-state resistance (Rds On) is 35 mΩ at 35A and 10V.

  4. What is the operating temperature range of the FDA70N20?

    The operating temperature range is -55°C to 150°C.

  5. Is the FDA70N20 RoHS compliant?
  6. What is the package type of the FDA70N20?

    The package type is TO-3P-3, SC-65-3.

  7. What are the typical turn-on and turn-off delay times of the FDA70N20?

    The turn-on delay time is 71 ns, and the turn-off delay time is 65 ns.

  8. What is the maximum gate to source voltage of the FDA70N20?

    The maximum gate to source voltage (Vgs) is ±30V.

  9. What is the power dissipation rating of the FDA70N20?

    The power dissipation rating is 417W.

  10. Is the FDA70N20 suitable for high-avalanche energy applications?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:35mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3970 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):417W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PN
Package / Case:TO-3P-3, SC-65-3
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