Overview
The FCPF190N65FL1-F154 is a high-voltage N-Channel SuperFET® II FRFET® MOSFET produced by onsemi. This device is part of onsemi's advanced super-junction (SJ) MOSFET family, utilizing charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. This technology is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates, making it highly suitable for various power system applications requiring miniaturization and higher efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 650 | V |
| Gate to Source Voltage (VGSS) - DC | ±20 | V |
| Gate to Source Voltage (VGSS) - AC (f > 1 Hz) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25°C | 20.6 | A |
| Continuous Drain Current (ID) at TC = 100°C | 13.1 | A |
| Pulsed Drain Current (IDM) | 61.8 | A |
| Single Pulsed Avalanche Energy (EAS) | 400 | mJ |
| Avalanche Current (IAS) | 4 | A |
| Repetitive Avalanche Energy (EAR) | 0.39 | mJ |
| MOSFET dv/dt | 100 | V/ns |
| Power Dissipation (PD) at TC = 25°C | 39 | W |
| Derate Above 25°C | 0.31 | W/°C |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Thermal Resistance, Junction to Case (RθJC) | 3.2 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 62.5 | °C/W |
| Static Drain to Source On Resistance (RDS(on)) at VGS = 10 V, ID = 10 A | 168 (Typ.) | mΩ |
| Total Gate Charge (Qg) at VGS = 10 V | 60 (Typ.) | nC |
| Effective Output Capacitance (Coss(eff.)) | 304 (Typ.) | pF |
Key Features
- High voltage rating of 650 V, with 700 V at TJ = 150°C
- Low on-resistance (RDS(on)) of 168 mΩ (Typ.) at VGS = 10 V, ID = 10 A
- Ultra low gate charge (Qg) of 60 nC (Typ.) at VGS = 10 V
- Low effective output capacitance (Coss(eff.)) of 304 pF (Typ.)
- 100% avalanche tested
- Pb-free and RoHS compliant
- Optimized reverse recovery performance of the body diode to remove additional components and improve system reliability
Applications
- Computing and display power supplies
- Telecom and server power supplies
- Industrial power supplies
- Lighting, charger, and adapter applications
Q & A
- What is the maximum drain to source voltage (VDSS) of the FCPF190N65FL1-F154 MOSFET?
The maximum drain to source voltage (VDSS) is 650 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 20.6 A.
- What is the typical on-resistance (RDS(on)) of the FCPF190N65FL1-F154 MOSFET?
The typical on-resistance (RDS(on)) is 168 mΩ at VGS = 10 V, ID = 10 A.
- What is the total gate charge (Qg) of the FCPF190N65FL1-F154 MOSFET?
The total gate charge (Qg) is typically 60 nC at VGS = 10 V.
- Is the FCPF190N65FL1-F154 MOSFET RoHS compliant?
Yes, the FCPF190N65FL1-F154 MOSFET is Pb-free and RoHS compliant.
- What are the typical applications of the FCPF190N65FL1-F154 MOSFET?
The typical applications include computing and display power supplies, telecom and server power supplies, industrial power supplies, and lighting, charger, and adapter applications.
- What is the maximum power dissipation (PD) of the FCPF190N65FL1-F154 MOSFET at TC = 25°C?
The maximum power dissipation (PD) at TC = 25°C is 39 W.
- What is the thermal resistance, junction to case (RθJC), of the FCPF190N65FL1-F154 MOSFET?
The thermal resistance, junction to case (RθJC), is 3.2 °C/W.
- What is the operating and storage temperature range of the FCPF190N65FL1-F154 MOSFET?
The operating and storage temperature range is -55 to +150 °C.
- Does the FCPF190N65FL1-F154 MOSFET have optimized reverse recovery performance of the body diode?
Yes, the FCPF190N65FL1-F154 MOSFET has optimized reverse recovery performance of the body diode to remove additional components and improve system reliability.
