Overview
The FCP190N65S3 is an N-Channel SuperFET III MOSFET produced by ON Semiconductor. This high-voltage super-junction (SJ) MOSFET is part of ON Semiconductor’s advanced family of MOSFETs, utilizing charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. This technology is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates, making it highly suitable for various power systems requiring miniaturization and higher efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 650 | V |
| Gate to Source Voltage (VGSS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25°C | 17 | A |
| Pulsed Drain Current (IDM) | 42.5 | A |
| Single Pulsed Avalanche Energy (EAS) | 76 | mJ |
| Avalanche Current (IAS) | 2.5 | A |
| Repetitive Avalanche Energy (EAR) | 1.44 | mJ |
| dv/dt | 100 | V/ns |
| Power Dissipation (PD) at TC = 25°C | 144 | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Thermal Resistance, Junction to Case (RθJC) | 0.87 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 62.5 | °C/W |
| Static Drain to Source On Resistance (RDS(on)) at VGS = 10 V, ID = 8.5 A | 159 - 190 | mΩ |
| Total Gate Charge at 10V (Qg(tot)) | 33 | nC |
Key Features
- 700 V @ TJ = 150°C
- Typical RDS(on) = 159 mΩ
- Ultra Low Gate Charge (Typ. Qg = 33 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)
- 100% Avalanche Tested
- RoHS Compliant
Applications
- Computing / Display Power Supplies
- Telecom / Server Power Supplies
- Industrial Power Supplies
- Lighting / Charger / Adapter
Q & A
- What is the maximum drain to source voltage (VDSS) of the FCP190N65S3 MOSFET?
The maximum drain to source voltage (VDSS) is 650 V.
- What is the continuous drain current (ID) at TC = 25°C for the FCP190N65S3?
The continuous drain current (ID) at TC = 25°C is 17 A.
- What is the typical on-resistance (RDS(on)) of the FCP190N65S3?
The typical on-resistance (RDS(on)) is 159 mΩ at VGS = 10 V, ID = 8.5 A.
- Is the FCP190N65S3 RoHS compliant?
- What are the typical applications for the FCP190N65S3 MOSFET?
The FCP190N65S3 is typically used in computing/display power supplies, telecom/server power supplies, industrial power supplies, and lighting/charger/adapters.
- What is the thermal resistance, junction to case (RθJC), for the FCP190N65S3?
The thermal resistance, junction to case (RθJC), is 0.87 °C/W.
- What is the maximum operating and storage temperature range for the FCP190N65S3?
The operating and storage temperature range is -55 to +150 °C.
- What is the total gate charge at 10V (Qg(tot)) for the FCP190N65S3?
The total gate charge at 10V (Qg(tot)) is 33 nC.
- Does the FCP190N65S3 undergo avalanche testing?
- What is the maximum power dissipation (PD) at TC = 25°C for the FCP190N65S3?
The maximum power dissipation (PD) at TC = 25°C is 144 W.
