Overview
The FCH104N60F-F085 is a high-voltage N-Channel MOSFET from ON Semiconductor, part of their SUPERFET II family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss and provide superior switching performance, making it suitable for various high-voltage applications such as soft and hard switching topologies, including high voltage full bridge and half bridge DC-DC converters, interleaved boost PFC, and boost PFC for HEV-EV automotive systems.
Key Specifications
| Parameter | Symbol | Typical/Maximum Value | Unit |
|---|---|---|---|
| Drain to Source Voltage | VDSS | 600 | V |
| Gate to Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 37 A | A |
| Pulsed Drain Current | IDM | See Fig. 4 | A |
| Single Pulsed Avalanche Rating | EAS | 809 mJ | mJ |
| Power Dissipation | PD | 357 W | W |
| Operating and Storage Temperature | TJ, TSTG | −55 to +150°C | °C |
| Drain to Source On Resistance | rDS(on) | 91 mΩ at VGS = 10 V, ID = 18.5 A | mΩ |
| Total Gate Charge | Qg(TOT) | 109 nC at VGS = 10 V, ID = 18.5 A | nC |
| Turn-On Time | ton | 58 ns | ns |
| Turn-Off Time | toff | 98 ns | ns |
Key Features
- Utilizes charge balance technology for low on-resistance and lower gate charge performance.
- Optimized body diode reverse recovery performance to remove additional components and improve system reliability.
- Qualified to AEC Q101 and PPAP capable, ensuring high reliability in automotive applications.
- Pb-free and RoHS compliant.
- UIS (Unclamped Inductive Switching) capability.
- Superior switching performance, dv/dt rate, and higher avalanche energy.
Applications
- Automotive On Board Charger.
- Automotive DC/DC Converter for HEV (Hybrid Electric Vehicles).
- High Voltage Full Bridge and Half Bridge DC-DC converters.
- Interleaved Boost PFC (Power Factor Correction).
- Boost PFC for HEV-EV automotive systems.
Q & A
- What is the maximum drain to source voltage of the FCH104N60F-F085 MOSFET?
The maximum drain to source voltage (VDSS) is 600 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 37 A.
- What is the typical on-resistance of the FCH104N60F-F085?
The typical drain to source on-resistance (rDS(on)) is 91 mΩ at VGS = 10 V, ID = 18.5 A.
- Is the FCH104N60F-F085 qualified for automotive use?
Yes, it is qualified to AEC Q101 and PPAP capable.
- What are the operating and storage temperature ranges for this MOSFET?
The operating and storage temperature range is −55 to +150°C.
- What is the total gate charge of the FCH104N60F-F085?
The total gate charge (Qg(TOT)) is 109 nC at VGS = 10 V, ID = 18.5 A.
- What is the turn-on and turn-off time of the FCH104N60F-F085?
The turn-on time (ton) is 58 ns, and the turn-off time (toff) is 98 ns.
- Is the FCH104N60F-F085 Pb-free and RoHS compliant?
Yes, it is Pb-free and RoHS compliant.
- What are some common applications of the FCH104N60F-F085 MOSFET?
Common applications include automotive on board chargers, automotive DC/DC converters for HEV, high voltage full bridge and half bridge DC-DC converters, and interleaved boost PFC.
- How does the optimized body diode of the FCH104N60F-F085 improve system reliability?
The optimized body diode reverse recovery performance helps remove additional components and improve system reliability.
