FCD600N65S3R0
  • Share:

onsemi FCD600N65S3R0

Manufacturer No:
FCD600N65S3R0
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCD600N65S3R0 is a high-voltage, N-Channel MOSFET from onsemi's SUPERFET III family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. The FCD600N65S3R0 is part of the Easy Drive series, which helps manage EMI issues and simplifies design implementation.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 650 V
Gate to Source Voltage (VGSS) ±30 V
Continuous Drain Current (ID) at TC = 25°C 6 A
Continuous Drain Current (ID) at TC = 100°C 3.8 A
Pulsed Drain Current (IDM) 15 A
Static Drain to Source On Resistance (RDS(on)) at VGS = 10 V, ID = 3 A 493
Total Gate Charge (Qg) at VGS = 10 V 11 nC
Effective Output Capacitance (Coss(eff.)) 127 pF
Operating and Storage Temperature Range (TJ, TSTG) −55 to +150 °C
Maximum Lead Temperature for Soldering 300 °C

Key Features

  • 700 V @ TJ = 150°C
  • Typical RDS(on) = 493 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 11 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)
  • 100% Avalanche Tested
  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant

Applications

  • Computing / Display Power Supplies
  • Telecom / Server Power Supplies
  • Industrial Power Supplies
  • Lighting / Charger / Adapter

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the FCD600N65S3R0?

    The maximum drain to source voltage (VDSS) is 650 V.

  2. What is the typical on-resistance (RDS(on)) of the FCD600N65S3R0?

    The typical on-resistance (RDS(on)) is 493 mΩ at VGS = 10 V and ID = 3 A.

  3. What is the total gate charge (Qg) of the FCD600N65S3R0?

    The total gate charge (Qg) is 11 nC at VGS = 10 V.

  4. Is the FCD600N65S3R0 RoHS compliant?
  5. What are the typical applications of the FCD600N65S3R0?

    The FCD600N65S3R0 is typically used in computing/display power supplies, telecom/server power supplies, industrial power supplies, and lighting/charger/adapters.

  6. What is the maximum continuous drain current (ID) at TC = 25°C?

    The maximum continuous drain current (ID) at TC = 25°C is 6 A.

  7. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 300°C.

  8. What is the effective output capacitance (Coss(eff.)) of the FCD600N65S3R0?

    The effective output capacitance (Coss(eff.)) is 127 pF.

  9. What is the operating and storage temperature range of the FCD600N65S3R0?

    The operating and storage temperature range is −55 to +150°C.

  10. Is the FCD600N65S3R0 100% avalanche tested?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:465 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):54W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.54
948

Please send RFQ , we will respond immediately.

Related Product By Categories

STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK

Related Product By Brand

1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5