FCD600N65S3R0
  • Share:

onsemi FCD600N65S3R0

Manufacturer No:
FCD600N65S3R0
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCD600N65S3R0 is a high-voltage, N-Channel MOSFET from onsemi's SUPERFET III family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. The FCD600N65S3R0 is part of the Easy Drive series, which helps manage EMI issues and simplifies design implementation.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 650 V
Gate to Source Voltage (VGSS) ±30 V
Continuous Drain Current (ID) at TC = 25°C 6 A
Continuous Drain Current (ID) at TC = 100°C 3.8 A
Pulsed Drain Current (IDM) 15 A
Static Drain to Source On Resistance (RDS(on)) at VGS = 10 V, ID = 3 A 493
Total Gate Charge (Qg) at VGS = 10 V 11 nC
Effective Output Capacitance (Coss(eff.)) 127 pF
Operating and Storage Temperature Range (TJ, TSTG) −55 to +150 °C
Maximum Lead Temperature for Soldering 300 °C

Key Features

  • 700 V @ TJ = 150°C
  • Typical RDS(on) = 493 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 11 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)
  • 100% Avalanche Tested
  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant

Applications

  • Computing / Display Power Supplies
  • Telecom / Server Power Supplies
  • Industrial Power Supplies
  • Lighting / Charger / Adapter

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the FCD600N65S3R0?

    The maximum drain to source voltage (VDSS) is 650 V.

  2. What is the typical on-resistance (RDS(on)) of the FCD600N65S3R0?

    The typical on-resistance (RDS(on)) is 493 mΩ at VGS = 10 V and ID = 3 A.

  3. What is the total gate charge (Qg) of the FCD600N65S3R0?

    The total gate charge (Qg) is 11 nC at VGS = 10 V.

  4. Is the FCD600N65S3R0 RoHS compliant?
  5. What are the typical applications of the FCD600N65S3R0?

    The FCD600N65S3R0 is typically used in computing/display power supplies, telecom/server power supplies, industrial power supplies, and lighting/charger/adapters.

  6. What is the maximum continuous drain current (ID) at TC = 25°C?

    The maximum continuous drain current (ID) at TC = 25°C is 6 A.

  7. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 300°C.

  8. What is the effective output capacitance (Coss(eff.)) of the FCD600N65S3R0?

    The effective output capacitance (Coss(eff.)) is 127 pF.

  9. What is the operating and storage temperature range of the FCD600N65S3R0?

    The operating and storage temperature range is −55 to +150°C.

  10. Is the FCD600N65S3R0 100% avalanche tested?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:465 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):54W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.54
948

Please send RFQ , we will respond immediately.

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75

Related Product By Brand

NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4