FCD600N65S3R0
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onsemi FCD600N65S3R0

Manufacturer No:
FCD600N65S3R0
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 6A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCD600N65S3R0 is a high-voltage, N-Channel MOSFET from onsemi's SUPERFET III family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. The FCD600N65S3R0 is part of the Easy Drive series, which helps manage EMI issues and simplifies design implementation.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 650 V
Gate to Source Voltage (VGSS) ±30 V
Continuous Drain Current (ID) at TC = 25°C 6 A
Continuous Drain Current (ID) at TC = 100°C 3.8 A
Pulsed Drain Current (IDM) 15 A
Static Drain to Source On Resistance (RDS(on)) at VGS = 10 V, ID = 3 A 493
Total Gate Charge (Qg) at VGS = 10 V 11 nC
Effective Output Capacitance (Coss(eff.)) 127 pF
Operating and Storage Temperature Range (TJ, TSTG) −55 to +150 °C
Maximum Lead Temperature for Soldering 300 °C

Key Features

  • 700 V @ TJ = 150°C
  • Typical RDS(on) = 493 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 11 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)
  • 100% Avalanche Tested
  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant

Applications

  • Computing / Display Power Supplies
  • Telecom / Server Power Supplies
  • Industrial Power Supplies
  • Lighting / Charger / Adapter

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the FCD600N65S3R0?

    The maximum drain to source voltage (VDSS) is 650 V.

  2. What is the typical on-resistance (RDS(on)) of the FCD600N65S3R0?

    The typical on-resistance (RDS(on)) is 493 mΩ at VGS = 10 V and ID = 3 A.

  3. What is the total gate charge (Qg) of the FCD600N65S3R0?

    The total gate charge (Qg) is 11 nC at VGS = 10 V.

  4. Is the FCD600N65S3R0 RoHS compliant?
  5. What are the typical applications of the FCD600N65S3R0?

    The FCD600N65S3R0 is typically used in computing/display power supplies, telecom/server power supplies, industrial power supplies, and lighting/charger/adapters.

  6. What is the maximum continuous drain current (ID) at TC = 25°C?

    The maximum continuous drain current (ID) at TC = 25°C is 6 A.

  7. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 300°C.

  8. What is the effective output capacitance (Coss(eff.)) of the FCD600N65S3R0?

    The effective output capacitance (Coss(eff.)) is 127 pF.

  9. What is the operating and storage temperature range of the FCD600N65S3R0?

    The operating and storage temperature range is −55 to +150°C.

  10. Is the FCD600N65S3R0 100% avalanche tested?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:465 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):54W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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