FCD360N65S3R0
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onsemi FCD360N65S3R0

Manufacturer No:
FCD360N65S3R0
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 10A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCD360N65S3R0 is a high-voltage, N-Channel MOSFET from onsemi's SUPERFET III family. This device utilizes charge balance technology, which enhances its performance by providing outstanding low on-resistance and high efficiency. It is part of onsemi's latest generation of super-junction (SJ) MOSFETs, designed to meet the demands of high-power applications with its advanced features and robust performance characteristics.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
Current Rating (Id)10 A
On-Resistance (Rds(on))360 mΩ
Minimum Operating Temperature-55°C
Maximum Operating Temperature150°C
Power Dissipation (Pd)83 W
Channel ModeEnhancement

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Low on-resistance of 360 mΩ, which reduces power losses and increases efficiency.
  • Utilizes charge balance technology for enhanced performance.
  • Part of the SUPERFET III family, known for its advanced super-junction technology.
  • Wide operating temperature range from -55°C to 150°C.
  • Enhancement mode operation for better control over the channel.

Applications

The FCD360N65S3R0 is designed for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Renewable energy systems such as solar and wind power inverters.
  • Industrial power systems and automation.
  • High-frequency switching applications.

Q & A

  1. What is the voltage rating of the FCD360N65S3R0 MOSFET?
    The voltage rating of the FCD360N65S3R0 MOSFET is 650 V.
  2. What is the current rating of the FCD360N65S3R0 MOSFET?
    The current rating of the FCD360N65S3R0 MOSFET is 10 A.
  3. What is the on-resistance of the FCD360N65S3R0 MOSFET?
    The on-resistance of the FCD360N65S3R0 MOSFET is 360 mΩ.
  4. What is the operating temperature range of the FCD360N65S3R0 MOSFET?
    The operating temperature range of the FCD360N65S3R0 MOSFET is from -55°C to 150°C.
  5. What technology does the FCD360N65S3R0 MOSFET use?
    The FCD360N65S3R0 MOSFET uses charge balance technology and super-junction (SJ) technology.
  6. What are some typical applications for the FCD360N65S3R0 MOSFET?
    Typical applications include power supplies, motor control systems, renewable energy systems, industrial power systems, and high-frequency switching applications.
  7. What is the power dissipation rating of the FCD360N65S3R0 MOSFET?
    The power dissipation rating of the FCD360N65S3R0 MOSFET is 83 W.
  8. Is the FCD360N65S3R0 MOSFET an enhancement mode device?
    Yes, the FCD360N65S3R0 MOSFET operates in enhancement mode.
  9. Where can I find simulation models for the FCD360N65S3R0 MOSFET?
    Simulation models for the FCD360N65S3R0 MOSFET can be found on the onsemi website under the product page and technical resources section.
  10. What simulators are supported for the FCD360N65S3R0 MOSFET models?
    The models are supported for SIMetrix, OrCAD PSPICE, and LTSpice simulators.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:730 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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