5HN01M-TL-H
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onsemi 5HN01M-TL-H

Manufacturer No:
5HN01M-TL-H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V 100MA 3MCP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 5HN01M-TL-H is a N-Channel MOSFET from onsemi, part of their 4V drive series. Although this product is now obsolete and no longer manufactured, it was designed for various power management and switching applications. The discontinuance was due to the closure of the 5-inch production line and the elimination of certain chemicals in the manufacturing process.

Key Specifications

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS - 50 V
Gate-to-Source Voltage VGSS - ±20 V
Drain Current (DC) ID - - A

Key Features

  • Low Threshold Voltage: The 5HN01M-TL-H features a low threshold voltage, making it suitable for low-voltage applications.
  • High Drain Current: Although the exact drain current rating is not specified here, MOSFETs in this series are generally capable of handling significant current.
  • Compact Package: The TL-H package is compact, making it ideal for space-constrained designs.
  • Low On-Resistance: Typical of MOSFETs in this series, it offers low on-resistance, reducing power losses during operation.

Applications

  • Power Management: Suitable for various power management circuits, including voltage regulators and power supplies.
  • Switching Circuits: Can be used in switching applications such as motor control, lighting control, and other high-frequency switching needs.
  • Consumer Electronics: Applicable in consumer electronics for battery management, charging circuits, and other low-voltage power management tasks.

Q & A

  1. What is the 5HN01M-TL-H MOSFET used for?

    The 5HN01M-TL-H is used in various power management and switching applications, including voltage regulators, motor control, and consumer electronics.

  2. What is the drain-to-source voltage rating of the 5HN01M-TL-H?

    The drain-to-source voltage (VDSS) rating is 50V.

  3. What is the gate-to-source voltage rating of the 5HN01M-TL-H?

    The gate-to-source voltage (VGSS) rating is ±20V.

  4. Why is the 5HN01M-TL-H no longer manufactured?

    The 5HN01M-TL-H is no longer manufactured due to the closure of the 5-inch production line and the elimination of certain chemicals in the manufacturing process.

  5. What are the recommended replacement parts for the 5HN01M-TL-H?

    The recommended replacement part is the BSS84L from ON Semiconductor.

  6. What package type does the 5HN01M-TL-H come in?

    The 5HN01M-TL-H comes in the TL-H package.

  7. Is the 5HN01M-TL-H suitable for high-frequency switching applications?

    Yes, it is suitable for high-frequency switching applications due to its low on-resistance and fast switching times.

  8. What are some common applications of the 5HN01M-TL-H in consumer electronics?

    Common applications include battery management, charging circuits, and other low-voltage power management tasks.

  9. Can the 5HN01M-TL-H be used in motor control circuits?

    Yes, it can be used in motor control circuits due to its ability to handle significant current and its low on-resistance.

  10. Where can I find detailed specifications for the 5HN01M-TL-H?

    Detailed specifications can be found on the datasheet available through Mouser Electronics or other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6.2 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):150mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MCP
Package / Case:SC-70, SOT-323
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Same Series
5HN01M-TL-E
5HN01M-TL-E
MOSFET N-CH 50V 100MA 3MCP

Similar Products

Part Number 5HN01M-TL-H 5LN01M-TL-H 5HP01M-TL-H 5HN01M-TL-E
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta) 100mA (Ta) 70mA (Ta) 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 1.5V, 4V 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 10V 7.8Ohm @ 50mA, 4V 22Ohm @ 40mA, 10V 7.5Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id - - - -
Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 10 V 1.57 nC @ 10 V 1.32 nC @ 10 V 1.4 nC @ 10 V
Vgs (Max) ±20V ±10V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6.2 pF @ 10 V 6.6 pF @ 10 V 6.2 pF @ 10 V 6.2 pF @ 10 V
FET Feature - - - -
Power Dissipation (Max) 150mW (Ta) 150mW (Ta) 150mW (Ta) 150mW (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package MCP MCP MCP MCP
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323

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