2SK3747-1E
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onsemi 2SK3747-1E

Manufacturer No:
2SK3747-1E
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 1500V 2A TO3PF-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2SK3747-1E is an N-Channel Power MOSFET produced by onsemi, designed for high-voltage applications. This device is part of the PowerTrench® T1 family, known for its high performance and reliability. The 2SK3747-1E is housed in a TO-3PF-3L package, making it suitable for a variety of power management and control systems.

Key Specifications

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS - 1500 V
Gate-to-Source Voltage VGSS - ±35 V
Drain Current (DC) ID - 2 A
On-Resistance (RDS(on)) RDS(on) @ VGS = 10 V 13 Ω Ω
Input Capacitance (Ciss) Ciss @ VDS = 30 V 380 pF pF
Power Dissipation (Max) PD Ta, Tc 3 W, 50 W W
Operating Temperature TJ - 150°C °C

Key Features

  • High Voltage Capability: The 2SK3747-1E can handle a drain-to-source voltage of up to 1500 V, making it suitable for high-voltage applications.
  • Low On-Resistance: With an on-resistance of 13 Ω at VGS = 10 V, this MOSFET minimizes power losses and enhances efficiency.
  • High Current Handling: It can handle a continuous drain current of 2 A, which is adequate for various power management tasks.
  • Compact Packaging: The TO-3PF-3L package is designed to be compact and efficient, suitable for applications where space is limited.
  • Wide Operating Temperature Range: The device can operate up to a junction temperature of 150°C, ensuring reliability in demanding environments.

Applications

  • Power Factor Correction (PFC): The high voltage and low on-resistance make it ideal for PFC circuits in power supplies.
  • Server and Telecom Power Supplies: Suitable for use in high-reliability power supplies for server and telecom applications.
  • LED Lighting: Can be used in LED lighting systems that require high voltage and efficient power management.
  • General Power Management: Applicable in various general power management and control systems requiring high voltage handling.

Q & A

  1. What is the maximum drain-to-source voltage of the 2SK3747-1E?

    The maximum drain-to-source voltage is 1500 V.

  2. What is the on-resistance of the 2SK3747-1E at VGS = 10 V?

    The on-resistance is 13 Ω at VGS = 10 V.

  3. What is the maximum continuous drain current of the 2SK3747-1E?

    The maximum continuous drain current is 2 A.

  4. What is the input capacitance of the 2SK3747-1E at VDS = 30 V?

    The input capacitance is 380 pF at VDS = 30 V.

  5. What is the maximum power dissipation of the 2SK3747-1E?

    The maximum power dissipation is 3 W at Ta and 50 W at Tc.

  6. What is the operating temperature range of the 2SK3747-1E?

    The operating temperature range is up to 150°C junction temperature.

  7. In what package is the 2SK3747-1E available?

    The 2SK3747-1E is available in a TO-3PF-3L package.

  8. What are some common applications of the 2SK3747-1E?

    Common applications include Power Factor Correction, server and telecom power supplies, LED lighting, and general power management.

  9. What is the gate-to-source voltage rating of the 2SK3747-1E?

    The gate-to-source voltage rating is ±35 V.

  10. Is the 2SK3747-1E suitable for high-reliability applications?

    Yes, it is designed for high-reliability applications and can operate in demanding environments.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:37.5 nC @ 10 V
Vgs (Max):±35V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 50W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PF-3
Package / Case:SC-94
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Same Series
2SK3747
2SK3747
MOSFET N-CH 1500V 2A TO3PML

Similar Products

Part Number 2SK3747-1E 2SK3748-1E 2SK3707-1E 2SK3746-1E
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V 1500 V 100 V 1500 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 4A (Ta) 20A (Ta) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 4V, 10V 10V
Rds On (Max) @ Id, Vgs 13Ohm @ 1A, 10V 7Ohm @ 2A, 10V 60mOhm @ 10A, 10V 13Ohm @ 1A, 10V
Vgs(th) (Max) @ Id - - - -
Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 10 V 80 nC @ 10 V 44 nC @ 10 V 37.5 nC @ 10 V
Vgs (Max) ±35V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 30 V 790 pF @ 30 V 2150 pF @ 20 V 380 pF @ 30 V
FET Feature - - - -
Power Dissipation (Max) 3W (Ta), 50W (Tc) 3W (Ta), 65W (Tc) 2W (Ta), 25W (Tc) 2.5W (Ta), 110W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-3PF-3 TO-3PF-3 TO-220F-3SG TO-3P-3L
Package / Case SC-94 SC-94 TO-220-3 Full Pack TO-3P-3, SC-65-3

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