2N7000RLRAG
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onsemi 2N7000RLRAG

Manufacturer No:
2N7000RLRAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 200MA TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7000RLRAG is a highly versatile and efficient N-channel enhancement-mode MOSFET produced by ON Semiconductor. Known for its low on-resistance and fast switching capabilities, this transistor is ideal for a wide range of switching and amplification tasks. It is designed for low-power switching and amplification, making it suitable for various electronic circuits. The 2N7000 is packaged in a compact TO-92 case, allowing for through-hole mounting, and is renowned for its robust electrical characteristics and reliable performance in diverse environments.

Key Specifications

Parameter Value Unit
Transistor Type MOSFET
Transistor Polarity N Channel
Drain Source Voltage, Vds 60 V
Continuous Drain Current, Id 200 mA
Pulsed Drain Current, Id (Pulse) 500 mA
On Resistance, Rds(on) 1.2 - 5 Ω
Rds(on) Test Voltage, Vgs 10 V
Gate-Source Voltage, Vgs ±20 (Continuous), ±40 (Non-Repetitive) V
Operating and Storage Temperature Range -55 to 150 °C
Maximum Power Dissipation 400 mW (Derated above 25°C) mW

Key Features

  • Low On-Resistance (Rds(on)): The 2N7000 has a low on-resistance of around 1.2 ohms at 10V and 500mA, ensuring minimal power loss and efficient current conduction.
  • High Switching Speed: It features fast switching speeds with rise and fall times of approximately 10 ns and 13 ns, respectively, making it suitable for high-frequency operations such as PWM control, digital signal processing, and RF circuits.
  • Moderate Current Handling: The transistor can handle a continuous drain current of 200mA and pulsed currents up to 500mA, making it ideal for driving small motors, LEDs, and other components requiring moderate current.
  • Wide Voltage Tolerance: With a drain-source voltage (Vds) of 60 volts and a gate-source voltage (Vgs) of ±20 volts, it can operate in circuits requiring higher voltages, enhancing its robustness and versatility.

Applications

  • Digital Logic Circuits: The 2N7000 is commonly used in digital logic circuits due to its high switching speed and low on-resistance, ensuring minimal power loss and efficient operation. It is beneficial for microcontrollers, logic gates, and chips with microprocessors.
  • Relay Drivers: It controls relay operation in relay driver circuits, allowing the switching of large currents with small gate voltages. This is particularly useful in industrial automation, home automation systems, and automotive applications.
  • Power Management Applications: The 2N7000 is used in voltage regulators to maintain stable output voltages despite variations in input voltage and load conditions. It is also used in battery management systems to ensure safe and efficient charging and discharging of batteries.
  • Small Servo Motor Control and Power MOSFET Gate Drivers: The transistor is suitable for controlling small servo motors and as gate drivers for power MOSFETs due to its high saturation current capability and rugged design.

Q & A

  1. What is the maximum drain-source voltage (Vds) of the 2N7000?

    The maximum drain-source voltage (Vds) of the 2N7000 is 60 volts.

  2. What is the continuous drain current (Id) of the 2N7000?

    The continuous drain current (Id) of the 2N7000 is 200mA.

  3. What is the typical on-resistance (Rds(on)) of the 2N7000?

    The typical on-resistance (Rds(on)) of the 2N7000 is around 1.2 ohms at 10V and 500mA.

  4. What is the gate-source voltage (Vgs) range for the 2N7000?

    The gate-source voltage (Vgs) range for the 2N7000 is ±20 volts continuously and ±40 volts non-repetitively.

  5. What are the typical applications of the 2N7000?

    The 2N7000 is typically used in digital logic circuits, relay drivers, power management applications, small servo motor control, and as power MOSFET gate drivers.

  6. What is the package type of the 2N7000?

    The 2N7000 is packaged in a TO-92 case, allowing for through-hole mounting.

  7. What is the maximum power dissipation of the 2N7000?

    The maximum power dissipation of the 2N7000 is 400 mW, derated above 25°C.

  8. What are the operating and storage temperature ranges for the 2N7000?

    The operating and storage temperature ranges for the 2N7000 are -55 to 150°C.

  9. How does the 2N7000 contribute to energy efficiency in battery-powered devices?

    The 2N7000 contributes to energy efficiency in battery-powered devices through its low on-resistance, which minimizes power loss and ensures efficient current conduction.

  10. Can the 2N7000 handle high-frequency operations?

    Yes, the 2N7000 can handle high-frequency operations due to its fast switching speeds, making it suitable for applications such as PWM control, digital signal processing, and RF circuits.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92 (TO-226)
Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads)
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Same Series
2N7000G
2N7000G
MOSFET N-CH 60V 200MA TO92-3

Similar Products

Part Number 2N7000RLRAG 2N7000RLRMG 2N7000RLRPG 2N7000RLRA
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta) 200mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA 3V @ 1mA 3V @ 1mA 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - - -
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 60 pF @ 25 V 60 pF @ 25 V 60 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 350mW (Tc) 350mW (Tc) 350mW (Tc) 350mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226) TO-92 (TO-226)
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) TO-226-3, TO-92-3 Long Body (Formed Leads) TO-226-3, TO-92-3 Long Body (Formed Leads) TO-226-3, TO-92-3 Long Body (Formed Leads)

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