PSMN1R1-30PL,127
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NXP Semiconductors PSMN1R1-30PL,127

Manufacturer No:
PSMN1R1-30PL,127
Manufacturer:
NXP Semiconductors
Package:
Bulk
Description:
NEXPERIA PSMN1R1-30PL - 120A, 30
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN1R1-30PL,127 is a logic level N-channel MOSFET produced by NXP Semiconductors (now known as Nexperia). This component is housed in a TO-220AB package and is qualified to operate up to 175 °C. Although this product has been discontinued, it was designed and qualified for use in a wide range of industrial, communications, and domestic equipment.

Key Specifications

Parameter Value
Type number PSMN1R1-30PL
Package version SOT78 (TO-220AB)
Product status End of life
Channel type N-channel
Number of transistors 1
VDS [max] (V) 30
RDSon [max] @ VGS = 10 V (mΩ) 1.3
RDSon [max] @ VGS = 4.5 V; @25 °C (mΩ) 1.6
Tj [max] (°C) 175
ID [max] (A) 120
QGD [typ] (nC) 37
QG(tot) [typ] @ VGS = 4.5 V (nC) 118
QG(tot) [typ] @ VGS = 10 V (nC) 243
Ptot [max] (W) 338
Qr [typ] (nC) 123
VGSth [typ] (V) 1.7
Automotive qualified No
Ciss [typ] (pF) 14850
Coss [typ] (pF) 2799

Key Features

  • High efficiency due to low switching and conduction losses.
  • Suitable for logic level gate drive sources.

Applications

  • DC-to-DC converters.
  • Load switching.
  • Motor control.
  • Server power supplies.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PSMN1R1-30PL,127?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the maximum on-resistance (RDSon) at VGS = 10 V?

    The maximum on-resistance (RDSon) at VGS = 10 V is 1.3 mΩ.

  3. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 120 A.

  4. What are the typical gate-drain charge (QGD) and total gate charge (QG(tot)) values?

    The typical gate-drain charge (QGD) is 37 nC, and the total gate charge (QG(tot)) at VGS = 4.5 V is 118 nC, and at VGS = 10 V is 243 nC.

  5. Is the PSMN1R1-30PL,127 automotive qualified?

    No, the PSMN1R1-30PL,127 is not automotive qualified.

  6. What is the maximum junction temperature (Tj)?

    The maximum junction temperature (Tj) is 175 °C.

  7. What are some common applications of the PSMN1R1-30PL,127?

    Common applications include DC-to-DC converters, load switching, motor control, and server power supplies.

  8. What is the package type of the PSMN1R1-30PL,127?

    The package type is TO-220AB (SOT78).

  9. Is the PSMN1R1-30PL,127 still in production?

    No, the PSMN1R1-30PL,127 has been discontinued and is end of life.

  10. Where can I find detailed documentation and models for the PSMN1R1-30PL,127?

    Detailed documentation, including datasheets, application notes, and models, can be found on the Nexperia website and other electronics distributors like Digi-Key and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:243 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:14850 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):338W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number PSMN1R1-30PL,127 PSMN1R8-30PL,127 PSMN1R6-30PL,127 PSMN1R1-30EL,127
Manufacturer NXP Semiconductors Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 100A (Tc) 100A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 25A, 10V 1.8mOhm @ 25A, 10V 1.7mOhm @ 25A, 10V 1.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.15V @ 1mA 2.15V @ 1mA 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 243 nC @ 10 V 170 nC @ 10 V 212 nC @ 10 V 243 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 14850 pF @ 15 V 10180 pF @ 12 V 12493 pF @ 12 V 14850 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) 338W (Tc) 270W (Tc) 306W (Tc) 338W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB I2PAK
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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