PMZ600UNE315
  • Share:

NXP USA Inc. PMZ600UNE315

Manufacturer No:
PMZ600UNE315
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMZ600UNE315 is a small signal N-channel Trench MOSFET produced by NXP USA Inc., now part of Nexperia. This MOSFET is designed for low-power applications and is known for its high efficiency and reliability. It features a leadless ultra small plastic package (DFN1006-3 or SOT883), making it ideal for space-constrained designs.

Key Specifications

Parameter Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS 20 - - V
Gate-Source Threshold Voltage VGSth 0.45 0.7 0.95 V
Drain Leakage Current IDSS - - 10 µA
Thermal Resistance from Junction to Ambient Rth(j-a) 305 360 - K/W
Thermal Resistance from Junction to Solder Point Rth(j-sp) 150 175 - K/W
Package Type - - - DFN1006-3 (SOT883) -

Key Features

  • Low On-Resistance: The PMZ600UNE315 offers a low on-resistance, making it efficient for switching applications.
  • Small Package Size: The DFN1006-3 (SOT883) package is ultra small, ideal for space-constrained designs.
  • High Reliability: Designed with trench technology, this MOSFET provides high reliability and durability.
  • Low Leakage Current: The device has a low drain leakage current, which is beneficial for power-saving applications.
  • RoHS Compliant: The PMZ600UNE315 is RoHS compliant, ensuring it meets environmental standards.

Applications

  • Portable Electronics: Suitable for use in portable electronics due to its small size and low power consumption.
  • Automotive Systems: Can be used in various automotive systems where space and efficiency are critical.
  • Industrial Control Systems: Ideal for industrial control systems that require reliable and efficient switching.
  • Consumer Electronics: Used in consumer electronics such as smartphones, tablets, and other handheld devices.

Q & A

  1. What is the drain-source breakdown voltage of the PMZ600UNE315?

    The drain-source breakdown voltage is 20 V.

  2. What is the typical gate-source threshold voltage?

    The typical gate-source threshold voltage is 0.7 V.

  3. What is the package type of the PMZ600UNE315?

    The package type is DFN1006-3 (SOT883).

  4. Is the PMZ600UNE315 RoHS compliant?
  5. What are the typical applications of the PMZ600UNE315?
  6. What is the thermal resistance from junction to ambient?

    The thermal resistance from junction to ambient is typically 360 K/W.

  7. What is the maximum drain leakage current?

    The maximum drain leakage current is 10 µA.

  8. How does the small package size benefit the design?

    The small package size makes it ideal for space-constrained designs, allowing for more compact and efficient layouts.

  9. What technology is used in the PMZ600UNE315?
  10. Where can I find detailed specifications and datasheets for the PMZ600UNE315?

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

$0.03
29,335

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD44M32S50V50
DD44M32S50V50
CONN D-SUB HD PLUG 44P VERT SLDR
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number PMZ600UNE315 PMZB600UNE315 PMZ200UNE315
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
FET Type - - -
Technology - - -
Drain to Source Voltage (Vdss) - - -
Current - Continuous Drain (Id) @ 25°C - - -
Drive Voltage (Max Rds On, Min Rds On) - - -
Rds On (Max) @ Id, Vgs - - -
Vgs(th) (Max) @ Id - - -
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) - - -
Input Capacitance (Ciss) (Max) @ Vds - - -
FET Feature - - -
Power Dissipation (Max) - - -
Operating Temperature - - -
Mounting Type - - -
Supplier Device Package - - -
Package / Case - - -

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN

Related Product By Brand

BAP51-02,315
BAP51-02,315
NXP USA Inc.
RF DIODE PIN 60V 715MW SOD523
BAT54S/6215
BAT54S/6215
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
ADC1004S030TS/C1:1
ADC1004S030TS/C1:1
NXP USA Inc.
IC ADC 10BIT 28SSOP
MKE04Z128VLH4
MKE04Z128VLH4
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
MC9S08PL4CTG
MC9S08PL4CTG
NXP USA Inc.
IC MCU 8BIT 4KB FLASH 16TSSOP
MIMX8QP5AVUFFAB
MIMX8QP5AVUFFAB
NXP USA Inc.
MPU I.MX8 QUAD PLUS
PCA9514AD,112
PCA9514AD,112
NXP USA Inc.
IC BUFFER I2C/SMBUS HOTSWAP 8SO
MCZ33904C5EKR2
MCZ33904C5EKR2
NXP USA Inc.
IC INTERFACE SPECIALIZED 32SOIC
HEF4093BT/C4118
HEF4093BT/C4118
NXP USA Inc.
NAND GATE
74AHC595PW/AUJ
74AHC595PW/AUJ
NXP USA Inc.
IC SHIFT REGISTER 8BIT 16-TSSOP
PCF7922ATT/D1AC07J
PCF7922ATT/D1AC07J
NXP USA Inc.
RF TRANSMITTER 20TSSOP
MMA8652FCR1
MMA8652FCR1
NXP USA Inc.
ACCELEROMETER 2-8G I2C 10DFN