PMZ600UNE315
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NXP USA Inc. PMZ600UNE315

Manufacturer No:
PMZ600UNE315
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
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Product Introduction

Overview

The PMZ600UNE315 is a small signal N-channel Trench MOSFET produced by NXP USA Inc., now part of Nexperia. This MOSFET is designed for low-power applications and is known for its high efficiency and reliability. It features a leadless ultra small plastic package (DFN1006-3 or SOT883), making it ideal for space-constrained designs.

Key Specifications

Parameter Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS 20 - - V
Gate-Source Threshold Voltage VGSth 0.45 0.7 0.95 V
Drain Leakage Current IDSS - - 10 µA
Thermal Resistance from Junction to Ambient Rth(j-a) 305 360 - K/W
Thermal Resistance from Junction to Solder Point Rth(j-sp) 150 175 - K/W
Package Type - - - DFN1006-3 (SOT883) -

Key Features

  • Low On-Resistance: The PMZ600UNE315 offers a low on-resistance, making it efficient for switching applications.
  • Small Package Size: The DFN1006-3 (SOT883) package is ultra small, ideal for space-constrained designs.
  • High Reliability: Designed with trench technology, this MOSFET provides high reliability and durability.
  • Low Leakage Current: The device has a low drain leakage current, which is beneficial for power-saving applications.
  • RoHS Compliant: The PMZ600UNE315 is RoHS compliant, ensuring it meets environmental standards.

Applications

  • Portable Electronics: Suitable for use in portable electronics due to its small size and low power consumption.
  • Automotive Systems: Can be used in various automotive systems where space and efficiency are critical.
  • Industrial Control Systems: Ideal for industrial control systems that require reliable and efficient switching.
  • Consumer Electronics: Used in consumer electronics such as smartphones, tablets, and other handheld devices.

Q & A

  1. What is the drain-source breakdown voltage of the PMZ600UNE315?

    The drain-source breakdown voltage is 20 V.

  2. What is the typical gate-source threshold voltage?

    The typical gate-source threshold voltage is 0.7 V.

  3. What is the package type of the PMZ600UNE315?

    The package type is DFN1006-3 (SOT883).

  4. Is the PMZ600UNE315 RoHS compliant?
  5. What are the typical applications of the PMZ600UNE315?
  6. What is the thermal resistance from junction to ambient?

    The thermal resistance from junction to ambient is typically 360 K/W.

  7. What is the maximum drain leakage current?

    The maximum drain leakage current is 10 µA.

  8. How does the small package size benefit the design?

    The small package size makes it ideal for space-constrained designs, allowing for more compact and efficient layouts.

  9. What technology is used in the PMZ600UNE315?
  10. Where can I find detailed specifications and datasheets for the PMZ600UNE315?

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Similar Products

Part Number PMZ600UNE315 PMZB600UNE315 PMZ200UNE315
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active
FET Type - - -
Technology - - -
Drain to Source Voltage (Vdss) - - -
Current - Continuous Drain (Id) @ 25°C - - -
Drive Voltage (Max Rds On, Min Rds On) - - -
Rds On (Max) @ Id, Vgs - - -
Vgs(th) (Max) @ Id - - -
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) - - -
Input Capacitance (Ciss) (Max) @ Vds - - -
FET Feature - - -
Power Dissipation (Max) - - -
Operating Temperature - - -
Mounting Type - - -
Supplier Device Package - - -
Package / Case - - -

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