PMZ370UNE315
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NXP USA Inc. PMZ370UNE315

Manufacturer No:
PMZ370UNE315
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMZ370UNE315 is a 30 V, N-channel Trench MOSFET manufactured by NXP USA Inc. This discrete semiconductor product is designed for high-performance applications requiring low on-state resistance and high switching speeds. Although it is currently not recommended for new designs (NRND), it remains available for existing projects and maintenance needs.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 30 V
VGS (Gate-Source Voltage) ±20 V
ID (Continuous Drain Current) 3.5 A
RDS(on) (On-State Resistance) 0.045 Ω
Ptot (Total Power Dissipation) 1.25 W
TJ (Junction Temperature) -55 to 150

Key Features

The PMZ370UNE315 features a trench MOSFET structure, which provides low on-state resistance and high switching speeds. Key features include:

  • Low on-state resistance (RDS(on)) of 0.045 Ω.
  • High continuous drain current (ID) of 3.5 A.
  • High drain-source voltage (VDS) of 30 V.
  • Compact package design suitable for various applications.

Applications

The PMZ370UNE315 is suitable for a variety of applications, including:

  • Power switching and power management in automotive and industrial systems.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • General-purpose switching applications requiring high efficiency and reliability.

Q & A

  1. What is the maximum drain-source voltage of the PMZ370UNE315?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the on-state resistance of the PMZ370UNE315?

    The on-state resistance (RDS(on)) is 0.045 Ω.

  3. Is the PMZ370UNE315 recommended for new designs?

    No, the PMZ370UNE315 is not recommended for new designs (NRND).

  4. What is the continuous drain current of the PMZ370UNE315?

    The continuous drain current (ID) is 3.5 A.

  5. What are the typical applications of the PMZ370UNE315?

    Typical applications include power switching, DC-DC converters, motor control, and general-purpose switching.

  6. What is the junction temperature range of the PMZ370UNE315?

    The junction temperature range is -55 to 150 ℃.

  7. Where can I find the datasheet for the PMZ370UNE315?

    The datasheet can be downloaded from various sources including Nexperia, FMall, and Mouser Electronics.

  8. What is the recommended replacement for the PMZ370UNE315?

    The recommended replacement is the PMZ390UNE.

  9. What type of MOSFET is the PMZ370UNE315?

    The PMZ370UNE315 is an N-channel Trench MOSFET.

  10. What is the total power dissipation of the PMZ370UNE315?

    The total power dissipation (Ptot) is 1.25 W).

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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