PMZ370UNE315
  • Share:

NXP USA Inc. PMZ370UNE315

Manufacturer No:
PMZ370UNE315
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMZ370UNE315 is a 30 V, N-channel Trench MOSFET manufactured by NXP USA Inc. This discrete semiconductor product is designed for high-performance applications requiring low on-state resistance and high switching speeds. Although it is currently not recommended for new designs (NRND), it remains available for existing projects and maintenance needs.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 30 V
VGS (Gate-Source Voltage) ±20 V
ID (Continuous Drain Current) 3.5 A
RDS(on) (On-State Resistance) 0.045 Ω
Ptot (Total Power Dissipation) 1.25 W
TJ (Junction Temperature) -55 to 150

Key Features

The PMZ370UNE315 features a trench MOSFET structure, which provides low on-state resistance and high switching speeds. Key features include:

  • Low on-state resistance (RDS(on)) of 0.045 Ω.
  • High continuous drain current (ID) of 3.5 A.
  • High drain-source voltage (VDS) of 30 V.
  • Compact package design suitable for various applications.

Applications

The PMZ370UNE315 is suitable for a variety of applications, including:

  • Power switching and power management in automotive and industrial systems.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • General-purpose switching applications requiring high efficiency and reliability.

Q & A

  1. What is the maximum drain-source voltage of the PMZ370UNE315?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the on-state resistance of the PMZ370UNE315?

    The on-state resistance (RDS(on)) is 0.045 Ω.

  3. Is the PMZ370UNE315 recommended for new designs?

    No, the PMZ370UNE315 is not recommended for new designs (NRND).

  4. What is the continuous drain current of the PMZ370UNE315?

    The continuous drain current (ID) is 3.5 A.

  5. What are the typical applications of the PMZ370UNE315?

    Typical applications include power switching, DC-DC converters, motor control, and general-purpose switching.

  6. What is the junction temperature range of the PMZ370UNE315?

    The junction temperature range is -55 to 150 ℃.

  7. Where can I find the datasheet for the PMZ370UNE315?

    The datasheet can be downloaded from various sources including Nexperia, FMall, and Mouser Electronics.

  8. What is the recommended replacement for the PMZ370UNE315?

    The recommended replacement is the PMZ390UNE.

  9. What type of MOSFET is the PMZ370UNE315?

    The PMZ370UNE315 is an N-channel Trench MOSFET.

  10. What is the total power dissipation of the PMZ370UNE315?

    The total power dissipation (Ptot) is 1.25 W).

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
401

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WV5Z/AA
DD26M2S5WV5Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E20/AA
DD26S200E20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP

Related Product By Brand

PMEG45U10EPD146
PMEG45U10EPD146
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
MIMXRT1011CAE4A
MIMXRT1011CAE4A
NXP USA Inc.
IC MCU 32BIT EXT MEM 80FQFP
MKL27Z256VFM4
MKL27Z256VFM4
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 32QFN
MIMX8MQ6DVAJZAA,557
MIMX8MQ6DVAJZAA,557
NXP USA Inc.
I.MX 8M: ARM CORTEX A53 QUAD COR
PCA9534BS3,118
PCA9534BS3,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16HVQFN
PCA9514AD,112
PCA9514AD,112
NXP USA Inc.
IC BUFFER I2C/SMBUS HOTSWAP 8SO
PCF8566T/S480/1,11
PCF8566T/S480/1,11
NXP USA Inc.
IC DRVR 7 SEGMNT 12 DIGIT 40VSO
PCA9420UKZ
PCA9420UKZ
NXP USA Inc.
POWER MANAGEMENT IC FOR LOW-POWE
MC33FS4500CAER2
MC33FS4500CAER2
NXP USA Inc.
SYSTEM BASIS CHIP LINEAR 0.5A V
MMPF0200F6AEP
MMPF0200F6AEP
NXP USA Inc.
IC REG CONV I.MX6 11OUT 56HVQFN
74LV165DB118
74LV165DB118
NXP USA Inc.
NOW NEXPERIA 74LV165DB - PARALLE
S912ZVMC25F1MKK557
S912ZVMC25F1MKK557
NXP USA Inc.
MICROCONTROLLER, 16-BIT, HCS12 C