PMZ370UNE315
  • Share:

NXP USA Inc. PMZ370UNE315

Manufacturer No:
PMZ370UNE315
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMZ370UNE315 is a 30 V, N-channel Trench MOSFET manufactured by NXP USA Inc. This discrete semiconductor product is designed for high-performance applications requiring low on-state resistance and high switching speeds. Although it is currently not recommended for new designs (NRND), it remains available for existing projects and maintenance needs.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 30 V
VGS (Gate-Source Voltage) ±20 V
ID (Continuous Drain Current) 3.5 A
RDS(on) (On-State Resistance) 0.045 Ω
Ptot (Total Power Dissipation) 1.25 W
TJ (Junction Temperature) -55 to 150

Key Features

The PMZ370UNE315 features a trench MOSFET structure, which provides low on-state resistance and high switching speeds. Key features include:

  • Low on-state resistance (RDS(on)) of 0.045 Ω.
  • High continuous drain current (ID) of 3.5 A.
  • High drain-source voltage (VDS) of 30 V.
  • Compact package design suitable for various applications.

Applications

The PMZ370UNE315 is suitable for a variety of applications, including:

  • Power switching and power management in automotive and industrial systems.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • General-purpose switching applications requiring high efficiency and reliability.

Q & A

  1. What is the maximum drain-source voltage of the PMZ370UNE315?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the on-state resistance of the PMZ370UNE315?

    The on-state resistance (RDS(on)) is 0.045 Ω.

  3. Is the PMZ370UNE315 recommended for new designs?

    No, the PMZ370UNE315 is not recommended for new designs (NRND).

  4. What is the continuous drain current of the PMZ370UNE315?

    The continuous drain current (ID) is 3.5 A.

  5. What are the typical applications of the PMZ370UNE315?

    Typical applications include power switching, DC-DC converters, motor control, and general-purpose switching.

  6. What is the junction temperature range of the PMZ370UNE315?

    The junction temperature range is -55 to 150 ℃.

  7. Where can I find the datasheet for the PMZ370UNE315?

    The datasheet can be downloaded from various sources including Nexperia, FMall, and Mouser Electronics.

  8. What is the recommended replacement for the PMZ370UNE315?

    The recommended replacement is the PMZ390UNE.

  9. What type of MOSFET is the PMZ370UNE315?

    The PMZ370UNE315 is an N-channel Trench MOSFET.

  10. What is the total power dissipation of the PMZ370UNE315?

    The total power dissipation (Ptot) is 1.25 W).

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
401

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E20/AA
DD26S200E20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL

Related Product By Brand

PESD5V0U1BA115
PESD5V0U1BA115
NXP USA Inc.
TVS DIODE 5VWM SOD323
BAP50-03,115
BAP50-03,115
NXP USA Inc.
RF DIODE PIN 50V 500MW SOD323
BZX84-C27/LF1VL
BZX84-C27/LF1VL
NXP USA Inc.
DIODE ZENER 27V 250MW TO236AB
Z0103MA0,412
Z0103MA0,412
NXP USA Inc.
NOW WEEN - Z0103MA0 - 4 QUADRANT
BF1202WR,115
BF1202WR,115
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R
MC9S08AC16CFGE
MC9S08AC16CFGE
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 44LQFP
MC9S12XEQ512CAA
MC9S12XEQ512CAA
NXP USA Inc.
IC MCU 16BIT 512KB FLASH 80QFP
LPC11E67JBD48E
LPC11E67JBD48E
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 48LQFP
IP4786CZ32518
IP4786CZ32518
NXP USA Inc.
IP4786CZ32S - CONSUMER CIRCUIT
MMPF0100F9AZES
MMPF0100F9AZES
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56QFN
MPXV5100GC6U
MPXV5100GC6U
NXP USA Inc.
SENSOR GAUGE PRESS 14.5PSI MAX
MPXAZ6115AP
MPXAZ6115AP
NXP USA Inc.
PRESSURE SENSOR ABSOLUTE 8-SOP