Overview
The PMV40UN,215 is an N-channel TrenchMOS ultra low level Field-Effect Transistor (FET) produced by NXP USA Inc. This device is designed and qualified for use in various applications, including computing, communications, consumer, and industrial sectors. It utilizes TrenchMOS technology, which offers advanced performance characteristics such as low on-state resistance and high switching speeds.
Key Specifications
| Parameter | Description | Value | Unit |
|---|---|---|---|
| FET Type | N-Channel | - | - |
| Drain to Source Voltage (Vdss) | Drain-source voltage (DC) | 30 | V |
| Gate-Source Voltage (Vgs) | Gate-source voltage (DC) | ±8 | V |
| Continuous Drain Current (Id) @ 25°C | Drain current (DC) at 25°C | 4.9 | A |
| Peak Drain Current (Idm) | Peak drain current at 25°C, pulsed | 19.6 | A |
| Total Power Dissipation (Ptot) | Total power dissipation at 25°C | 1.9 | W |
| Operating Temperature | Junction temperature range | -55 to 150 | °C |
| Package Type | Surface mount package | SOT-23 (TO-236AB) | - |
| Input Capacitance (Ciss) @ Vds | Input capacitance at Vds = 30 V | 445 | pF |
| Gate Charge (Qg) @ Vgs | Gate charge at Vgs = 4.5 V | 9.3 | nC |
| Drive Voltage (Max Rds On, Min Rds On) | Drive voltage for maximum and minimum Rds On | 1.8V, 4.5V | - |
Key Features
- Suitable for Ultra Low Gate Drive Sources: The PMV40UN,215 is designed to operate with low gate drive voltages, making it ideal for applications where power efficiency is crucial.
- High-Speed Switching: This MOSFET features fast switching times, which are essential for high-speed applications.
- Low On-State Resistance: The TrenchMOS technology used in this device ensures low on-state resistance, reducing power losses and improving overall efficiency.
- Compact Package: The SOT-23 package is compact and suitable for surface mount applications, making it ideal for space-constrained designs.
Applications
- Battery Management: The PMV40UN,215 is used in battery management systems due to its ability to handle high currents and its low on-state resistance.
- High-Speed Switching: This MOSFET is suitable for high-speed switching applications such as power supplies, motor control, and DC-DC converters.
- Computing and Communications: It is also used in computing and communication devices where efficient power management is essential.
- Consumer and Industrial Electronics: The device is versatile and can be applied in various consumer and industrial electronic devices requiring reliable and efficient power handling.
Q & A
- What is the maximum drain-source voltage (Vdss) of the PMV40UN,215?
The maximum drain-source voltage (Vdss) is 30 V.
- What is the continuous drain current (Id) at 25°C for the PMV40UN,215?
The continuous drain current (Id) at 25°C is 4.9 A.
- What is the package type of the PMV40UN,215?
The package type is SOT-23 (TO-236AB).
- What is the operating temperature range of the PMV40UN,215?
The operating temperature range is -55°C to 150°C.
- What is the input capacitance (Ciss) at Vds = 30 V for the PMV40UN,215?
The input capacitance (Ciss) at Vds = 30 V is 445 pF.
- What are the typical applications of the PMV40UN,215?
Typical applications include battery management, high-speed switching, computing, communications, and consumer and industrial electronics.
- What technology is used in the PMV40UN,215?
The PMV40UN,215 uses TrenchMOS technology.
- What is the maximum gate-source voltage (Vgs) for the PMV40UN,215?
The maximum gate-source voltage (Vgs) is ±8 V.
- What is the total power dissipation (Ptot) at 25°C for the PMV40UN,215?
The total power dissipation (Ptot) at 25°C is 1.9 W.
- Is the PMV40UN,215 RoHS compliant?
Yes, the PMV40UN,215 is RoHS3 compliant.
