PMV30UN,215
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NXP USA Inc. PMV30UN,215

Manufacturer No:
PMV30UN,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 5.7A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PMV30UN,215 is a high-performance N-channel MOSFET manufactured by NXP USA Inc. This component is designed to provide efficient switching and power management in various electronic systems. It is part of NXP's extensive range of discrete semiconductor products, known for their reliability and performance.

Key Specifications

Parameter Value
Manufacturer NXP USA Inc.
Part Number PMV30UN,215
Package/Case Type TO-236-3, SC-59, SOT-23-3 (Surface Mount)
Channel Type N-Channel
Drain-Source Voltage (Vds) 20V
Continuous Drain Current (Id) 5.7A
Possible HTSUS Value 8541.29.0095

Key Features

  • High Current Capability: The PMV30UN,215 can handle a continuous drain current of 5.7A, making it suitable for high-power applications.
  • Low On-Resistance: This MOSFET features low on-resistance, which minimizes power losses and enhances efficiency in switching applications.
  • Compact Package: Available in TO-236-3, SC-59, and SOT-23-3 surface mount packages, it is ideal for space-constrained designs.
  • Reliability: Manufactured by NXP, known for its high-quality and reliable semiconductor products.

Applications

  • Power Management: Suitable for power management in various electronic devices, including DC-DC converters and power supplies.
  • Motor Control: Can be used in motor control circuits due to its high current handling capability.
  • Switching Circuits: Ideal for use in switching circuits where high efficiency and low power loss are critical.
  • Automotive and Industrial Systems: Applicable in automotive and industrial systems requiring robust and reliable power management.

Q & A

  1. What is the part number of this MOSFET?

    The part number of this MOSFET is PMV30UN,215.

  2. Who is the manufacturer of the PMV30UN,215?

    The PMV30UN,215 is manufactured by NXP USA Inc.

  3. What is the drain-source voltage (Vds) of the PMV30UN,215?

    The drain-source voltage (Vds) of the PMV30UN,215 is 20V.

  4. What is the continuous drain current (Id) of the PMV30UN,215?

    The continuous drain current (Id) of the PMV30UN,215 is 5.7A.

  5. In what packages is the PMV30UN,215 available?

    The PMV30UN,215 is available in TO-236-3, SC-59, and SOT-23-3 surface mount packages.

  6. What are some common applications of the PMV30UN,215?

    Common applications include power management, motor control, switching circuits, and use in automotive and industrial systems.

  7. Why is the PMV30UN,215 preferred in high-power applications?

    The PMV30UN,215 is preferred in high-power applications due to its high current capability and low on-resistance.

  8. What is the possible HTSUS value for the PMV30UN,215?

    The possible HTSUS value for the PMV30UN,215 is 8541.29.0095.

  9. Where can I find detailed specifications for the PMV30UN,215?

    Detailed specifications can be found in the datasheet available on NXP's official website or through distributors like Digi-Key and Mouser.

  10. Is the PMV30UN,215 suitable for space-constrained designs?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:36mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:700mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs:7.4 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1.9W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23 (TO-236AB)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV30UN,215 PMV40UN,215 PMV30XN,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc) 4.9A (Tc) 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 36mOhm @ 2A, 4.5V 47mOhm @ 2A, 4.5V 35mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 1mA (Typ) 700mV @ 1mA (Typ) 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.4 nC @ 4.5 V 9.3 nC @ 4.5 V 7.4 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±12V
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 20 V 445 pF @ 30 V 420 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 1.9W (Tc) 1.9W (Tc) 380mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB) SOT-23 (TO-236AB)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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