NX3020NAKT,115
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NXP USA Inc. NX3020NAKT,115

Manufacturer No:
NX3020NAKT,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 180MA SC75
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The NX3020NAKT,115 is a metal oxide semiconductor field-effect transistor (MOSFET) produced by NXP USA Inc., now part of Nexperia. This N-Channel MOSFET is designed for high-efficiency power management applications. However, it is important to note that this component is currently obsolete and no longer manufactured by NXP/Nexperia.

Key Specifications

Parameter Value
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Package / Case TSSOP-6
Vgs(th) (Maximum Value) 2.5 V @ 250 µA
Input Capacitance (Ciss) 2075 pF @ 15 V
Gate Charge (Qg) 37 nC @ 10 V
RdsOn (Maximum Value) 8.5 mΩ @ 18 A, 10 V

Key Features

  • Low RdsOn to minimize on-state losses, ensuring high efficiency in power management applications.
  • High drain-source breakdown voltage (Vds) of 30 V.
  • Logic-level gate drive for easy integration with microcontrollers and other logic circuits.
  • Compact TSSOP-6 package, which is thermally efficient and occupies less board space.
  • RoHS compliant and lead-free, making it suitable for environmentally friendly designs.

Applications

  • High-efficiency power management systems.
  • DC-DC converters.
  • Power supplies.
  • Backlighting systems.
  • Other applications requiring low RdsOn and high switching performance.

Q & A

  1. What is the NX3020NAKT,115?

    The NX3020NAKT,115 is an N-Channel MOSFET produced by NXP USA Inc., now part of Nexperia.

  2. What is the drain-source breakdown voltage (Vds) of the NX3020NAKT,115?

    The Vds of the NX3020NAKT,115 is 30 V.

  3. What is the package type of the NX3020NAKT,115?

    The NX3020NAKT,115 comes in a TSSOP-6 package.

  4. Is the NX3020NAKT,115 RoHS compliant?

    Yes, the NX3020NAKT,115 is RoHS compliant and lead-free.

  5. What are the typical applications of the NX3020NAKT,115?

    The NX3020NAKT,115 is typically used in high-efficiency power management systems, DC-DC converters, power supplies, and backlighting systems.

  6. What is the RdsOn value of the NX3020NAKT,115?

    The RdsOn of the NX3020NAKT,115 is 8.5 mΩ @ 18 A, 10 V.

  7. Is the NX3020NAKT,115 still in production?

    No, the NX3020NAKT,115 is currently obsolete and no longer manufactured by NXP/Nexperia.

  8. What are the alternatives to the NX3020NAKT,115?

    Alternatives can be found on distributor websites such as Digi-Key, Avnet, and Mouser, which often list similar or substitute components.

  9. What is the gate charge (Qg) of the NX3020NAKT,115?

    The gate charge (Qg) of the NX3020NAKT,115 is 37 nC @ 10 V.

  10. Is the NX3020NAKT,115 suitable for high-reliability applications?

    While it is designed for high-efficiency applications, its obsolescence may limit its use in new high-reliability designs. Always check the latest availability and recommendations from the manufacturer or distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.44 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):230mW (Ta), 1.06W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-75
Package / Case:SC-75, SOT-416
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Similar Products

Part Number NX3020NAKT,115 NX3020NAKW,115
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 180mA (Ta) 180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 4.5Ohm @ 100mA, 10V 4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.44 nC @ 4.5 V 0.44 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13 pF @ 10 V 13 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 230mW (Ta), 1.06W (Tc) 260mW (Ta), 1.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SC-75 SOT-323
Package / Case SC-75, SOT-416 SC-70, SOT-323

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