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NX3020NAKW,115
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Nexperia USA Inc. NX3020NAKW,115

Manufacturer No:
NX3020NAKW,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 180MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3020NAKW,115 is a 30 V, single N-channel Trench MOSFET produced by Nexperia USA Inc. This component is designed in an enhancement mode Field-Effect Transistor (FET) configuration and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is particularly suited for applications requiring low on-state resistance and high efficiency. The NX3020NAKW,115 is also automotive qualified, making it reliable for use in automotive and other demanding environments.

Key Specifications

ParameterValueUnit
VDS [max]30V
VGS [max]8V
RDSon [max] @ VGS = 4.5 V1400mΩ
RDSon [max] @ VGS = 2.5 V2100mΩ
Tj [max]150°C
ID [max]0.18A
Ptot [max]0.26W
VGSth [typ]0.9V
Ciss [typ]34pF
Coss [typ]6.5pF

Key Features

  • Low on-state resistance (RDSon) for high efficiency.
  • Automotive qualified, ensuring reliability in demanding environments.
  • Small SOT23 (TO-236AB) package, suitable for space-constrained designs.
  • Enhancement mode Field-Effect Transistor (FET) configuration.
  • High maximum junction temperature (Tj) of 150°C.

Applications

The NX3020NAKW,115 is suitable for a variety of applications, including:

  • Automotive systems: Due to its automotive qualification, it is ideal for use in vehicle electronics.
  • Power management: Its low on-state resistance makes it efficient for power switching and management.
  • Industrial control: It can be used in industrial control systems where reliability and efficiency are crucial.
  • Consumer electronics: Suitable for use in consumer devices requiring compact and efficient power management solutions.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX3020NAKW,115?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the maximum gate-source voltage (VGS) of the NX3020NAKW,115?
    The maximum gate-source voltage (VGS) is 8 V.
  3. What is the typical threshold voltage (VGSth) of the NX3020NAKW,115?
    The typical threshold voltage (VGSth) is 0.9 V.
  4. What is the maximum on-state resistance (RDSon) at VGS = 4.5 V?
    The maximum on-state resistance (RDSon) at VGS = 4.5 V is 1400 mΩ.
  5. What is the package type of the NX3020NAKW,115?
    The package type is SOT23 (TO-236AB).
  6. Is the NX3020NAKW,115 automotive qualified?
    Yes, the NX3020NAKW,115 is automotive qualified.
  7. What is the maximum junction temperature (Tj) of the NX3020NAKW,115?
    The maximum junction temperature (Tj) is 150°C.
  8. What is the typical input capacitance (Ciss) of the NX3020NAKW,115?
    The typical input capacitance (Ciss) is 34 pF.
  9. What is the typical output capacitance (Coss) of the NX3020NAKW,115?
    The typical output capacitance (Coss) is 6.5 pF.
  10. What are some common applications of the NX3020NAKW,115?
    Common applications include automotive systems, power management, industrial control, and consumer electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.44 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):260mW (Ta), 1.1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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Similar Products

Part Number NX3020NAKW,115 NX3020NAKT,115
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 180mA (Ta) 180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 4.5Ohm @ 100mA, 10V 4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.44 nC @ 4.5 V 0.44 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13 pF @ 10 V 13 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 260mW (Ta), 1.1W (Tc) 230mW (Ta), 1.06W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 SC-75
Package / Case SC-70, SOT-323 SC-75, SOT-416

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