PSMN7R6-100BSEJ
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Nexperia USA Inc. PSMN7R6-100BSEJ

Manufacturer No:
PSMN7R6-100BSEJ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 75A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN7R6-100BSEJ is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is designed for high-power applications, offering a combination of low on-resistance and high current handling capabilities. It is packaged in a TO-263-3, D²Pak (2 Leads + Tab), or TO-263AB package, making it suitable for a variety of surface mount applications.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)100 V
Continuous Drain Current (Id)75 A (at Tj = 25°C)
On-Resistance (Rds(on))0.0065 Ω (at Vgs = 10 V)
Package TypeTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Maximum Power Dissipation (Pd)296 W (at Tc = 25°C)
Operating Junction Temperature (Tj)-55°C to 150°C

Key Features

  • Low on-resistance (Rds(on)) of 0.0065 Ω, enhancing efficiency in high-power applications.
  • High continuous drain current of 75 A, suitable for demanding power management tasks.
  • High maximum power dissipation of 296 W, ensuring robust performance under various conditions.
  • Wide operating junction temperature range from -55°C to 150°C, making it versatile for different environments.
  • Surface mount package options (TO-263-3, D²Pak, TO-263AB) for easy integration into modern PCB designs.

Applications

The PSMN7R6-100BSEJ is ideal for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power steering.
  • Industrial power management and control systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the PSMN7R6-100BSEJ?
    The maximum drain-source voltage (Vds) is 100 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (Id) is 75 A at Tj = 25°C.
  3. What is the on-resistance (Rds(on)) of the PSMN7R6-100BSEJ?
    The on-resistance (Rds(on)) is 0.0065 Ω at Vgs = 10 V.
  4. In what package types is the PSMN7R6-100BSEJ available?
    The PSMN7R6-100BSEJ is available in TO-263-3, D²Pak (2 Leads + Tab), and TO-263AB packages.
  5. What is the maximum power dissipation of this MOSFET?
    The maximum power dissipation (Pd) is 296 W at Tc = 25°C.
  6. What is the operating junction temperature range of the PSMN7R6-100BSEJ?
    The operating junction temperature range is from -55°C to 150°C.
  7. Is the PSMN7R6-100BSEJ suitable for automotive applications?
    Yes, it is suitable for automotive applications due to its robust specifications and temperature range.
  8. Can the PSMN7R6-100BSEJ be used in renewable energy systems?
    Yes, it can be used in renewable energy systems such as solar and wind power inverters.
  9. What are some common applications of the PSMN7R6-100BSEJ?
    Common applications include power supplies, DC-DC converters, motor control systems, and industrial power management.
  10. Where can I purchase the PSMN7R6-100BSEJ?
    You can purchase the PSMN7R6-100BSEJ from distributors such as Digi-Key, Mouser, and Element14.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:75A (Tj)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:128 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7110 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):296W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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