PSMN4R2-30MLDX
  • Share:

Nexperia USA Inc. PSMN4R2-30MLDX

Manufacturer No:
PSMN4R2-30MLDX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 70A LFPAK33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN4R2-30MLDX is a high-performance N-channel enhancement mode MOSFET produced by Nexperia USA Inc. It is part of the NextPowerS3 portfolio, which utilizes Nexperia's superjunction technology to offer superior performance. This MOSFET is packaged in the LFPAK33 format, known for its compact size and high power density. The device is designed for logic level gate drive, making it suitable for a wide range of applications requiring high current and low on-resistance.

Key Specifications

SpecificationDescription
Voltage Rating (Vds)30 V
Continuous Drain Current (Id)70 A (at Tc)
Power Dissipation (Ptot)65 W (at Tc)
On-Resistance (Rds(on))See datasheet for detailed values
Package TypeLFPAK33
Gate Threshold Voltage (Vgs(th))Logic level gate drive

Key Features

  • High-performance superjunction technology for low on-resistance and high efficiency.
  • Logic level gate drive for easy integration with microcontrollers and other logic circuits.
  • Compact LFPAK33 package for high power density and reduced board space.
  • High continuous drain current of 70 A and power dissipation of 65 W.
  • Suitable for high-frequency applications due to its low switching losses.

Applications

The PSMN4R2-30MLDX MOSFET is versatile and can be used in various applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Automotive systems requiring high reliability and efficiency.
  • Industrial power management systems.

Q & A

  1. What is the voltage rating of the PSMN4R2-30MLDX MOSFET?
    The voltage rating (Vds) of the PSMN4R2-30MLDX MOSFET is 30 V.
  2. What is the continuous drain current of the PSMN4R2-30MLDX MOSFET?
    The continuous drain current (Id) of the PSMN4R2-30MLDX MOSFET is 70 A at Tc.
  3. What package type is used for the PSMN4R2-30MLDX MOSFET?
    The PSMN4R2-30MLDX MOSFET is packaged in the LFPAK33 format.
  4. What is the gate threshold voltage of the PSMN4R2-30MLDX MOSFET?
    The gate threshold voltage (Vgs(th)) of the PSMN4R2-30MLDX MOSFET is logic level.
  5. What are some common applications of the PSMN4R2-30MLDX MOSFET?
    The PSMN4R2-30MLDX MOSFET is commonly used in power supplies, DC-DC converters, motor control systems, high-frequency switching circuits, automotive systems, and industrial power management systems.
  6. What technology is used in the PSMN4R2-30MLDX MOSFET?
    The PSMN4R2-30MLDX MOSFET utilizes Nexperia's superjunction technology.
  7. What is the power dissipation of the PSMN4R2-30MLDX MOSFET?
    The power dissipation (Ptot) of the PSMN4R2-30MLDX MOSFET is 65 W at Tc.
  8. Why is the LFPAK33 package beneficial?
    The LFPAK33 package offers high power density and reduced board space, making it ideal for compact and efficient designs.
  9. Is the PSMN4R2-30MLDX MOSFET suitable for high-frequency applications?
    Yes, the PSMN4R2-30MLDX MOSFET is suitable for high-frequency applications due to its low switching losses.
  10. Where can I find detailed specifications for the PSMN4R2-30MLDX MOSFET?
    Detailed specifications can be found in the datasheet available on the Nexperia website or through distributors like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:29.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1795 pF @ 15 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK33
Package / Case:SOT-1210, 8-LFPAK33 (5-Lead)
0 Remaining View Similar

In Stock

$0.98
598

Please send RFQ , we will respond immediately.

Related Product By Categories

FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75

Related Product By Brand

PMEG2002AESFBYL
PMEG2002AESFBYL
Nexperia USA Inc.
DIODE SCHTKY 20V 200MA DSN0603B2
BAS316/DG/B3,135
BAS316/DG/B3,135
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA TO236
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F
PDZ12B,115
PDZ12B,115
Nexperia USA Inc.
DIODE ZENER 12V 400MW SOD323
BZX384-B10,115
BZX384-B10,115
Nexperia USA Inc.
DIODE ZENER 10V 300MW SOD323
BZX84-C3V3/DG/B3,2
BZX84-C3V3/DG/B3,2
Nexperia USA Inc.
DIODE ZENER 3.3V 250MW TO236AB
BC856BS,115
BC856BS,115
Nexperia USA Inc.
TRANS 2PNP 65V 0.1A 6TSSOP
BC857BQB-QZ
BC857BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC847A/SNVL
BC847A/SNVL
Nexperia USA Inc.
TRANS NPN 45V 0.1A TO236AB
PMZ600UNEZ
PMZ600UNEZ
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
2N7002CK
2N7002CK
Nexperia USA Inc.
2N7002 - SMALL SIGNAL FIELD-EFFE
74HC540DB,112
74HC540DB,112
Nexperia USA Inc.
IC BUFFER INVERT 6V 20SSOP