PSMN4R2-30MLDX
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Nexperia USA Inc. PSMN4R2-30MLDX

Manufacturer No:
PSMN4R2-30MLDX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 70A LFPAK33
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The PSMN4R2-30MLDX is a high-performance N-channel enhancement mode MOSFET produced by Nexperia USA Inc. It is part of the NextPowerS3 portfolio, which utilizes Nexperia's superjunction technology to offer superior performance. This MOSFET is packaged in the LFPAK33 format, known for its compact size and high power density. The device is designed for logic level gate drive, making it suitable for a wide range of applications requiring high current and low on-resistance.

Key Specifications

SpecificationDescription
Voltage Rating (Vds)30 V
Continuous Drain Current (Id)70 A (at Tc)
Power Dissipation (Ptot)65 W (at Tc)
On-Resistance (Rds(on))See datasheet for detailed values
Package TypeLFPAK33
Gate Threshold Voltage (Vgs(th))Logic level gate drive

Key Features

  • High-performance superjunction technology for low on-resistance and high efficiency.
  • Logic level gate drive for easy integration with microcontrollers and other logic circuits.
  • Compact LFPAK33 package for high power density and reduced board space.
  • High continuous drain current of 70 A and power dissipation of 65 W.
  • Suitable for high-frequency applications due to its low switching losses.

Applications

The PSMN4R2-30MLDX MOSFET is versatile and can be used in various applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Automotive systems requiring high reliability and efficiency.
  • Industrial power management systems.

Q & A

  1. What is the voltage rating of the PSMN4R2-30MLDX MOSFET?
    The voltage rating (Vds) of the PSMN4R2-30MLDX MOSFET is 30 V.
  2. What is the continuous drain current of the PSMN4R2-30MLDX MOSFET?
    The continuous drain current (Id) of the PSMN4R2-30MLDX MOSFET is 70 A at Tc.
  3. What package type is used for the PSMN4R2-30MLDX MOSFET?
    The PSMN4R2-30MLDX MOSFET is packaged in the LFPAK33 format.
  4. What is the gate threshold voltage of the PSMN4R2-30MLDX MOSFET?
    The gate threshold voltage (Vgs(th)) of the PSMN4R2-30MLDX MOSFET is logic level.
  5. What are some common applications of the PSMN4R2-30MLDX MOSFET?
    The PSMN4R2-30MLDX MOSFET is commonly used in power supplies, DC-DC converters, motor control systems, high-frequency switching circuits, automotive systems, and industrial power management systems.
  6. What technology is used in the PSMN4R2-30MLDX MOSFET?
    The PSMN4R2-30MLDX MOSFET utilizes Nexperia's superjunction technology.
  7. What is the power dissipation of the PSMN4R2-30MLDX MOSFET?
    The power dissipation (Ptot) of the PSMN4R2-30MLDX MOSFET is 65 W at Tc.
  8. Why is the LFPAK33 package beneficial?
    The LFPAK33 package offers high power density and reduced board space, making it ideal for compact and efficient designs.
  9. Is the PSMN4R2-30MLDX MOSFET suitable for high-frequency applications?
    Yes, the PSMN4R2-30MLDX MOSFET is suitable for high-frequency applications due to its low switching losses.
  10. Where can I find detailed specifications for the PSMN4R2-30MLDX MOSFET?
    Detailed specifications can be found in the datasheet available on the Nexperia website or through distributors like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:29.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1795 pF @ 15 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):65W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK33
Package / Case:SOT-1210, 8-LFPAK33 (5-Lead)
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