PSMN2R6-30YLC,115
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Nexperia USA Inc. PSMN2R6-30YLC,115

Manufacturer No:
PSMN2R6-30YLC,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 100A LFPAK56
Delivery:
Payment:
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Product Introduction

Overview

The PSMN2R6-30YLC,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of the LFPAK56 and Power-SO8 package family, designed for use in a wide range of industrial and communication applications. It features a logic level enhancement mode, making it suitable for various power management and switching tasks.

Key Specifications

ParameterValue
Manufacturer Part NumberPSMN2R6-30YLC,115
ManufacturerNexperia USA Inc.
DescriptionMOSFET N-CH 30V 100A LFPAK
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs2.8 mOhm @ 25A, 10V
Power Dissipation (Max)106W (Tc)
Package / CaseLFPAK56, Power-SO8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id1.95V @ 1mA
Vgs (Max)±20V
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2435pF @ 15V

Key Features

  • High current capability of up to 100A at 25°C.
  • Low on-resistance (Rds On) of 2.8 mOhm at 25A and 10V Vgs.
  • High power dissipation of up to 106W.
  • Logic level enhancement mode for easy gate drive.
  • Wide operating temperature range from -55°C to 175°C.
  • Surface mount LFPAK56 and Power-SO8 packages for compact design.

Applications

The PSMN2R6-30YLC,115 MOSFET is designed for use in various industrial and communication applications, including but not limited to:

  • Power management systems.
  • Switching power supplies.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Automotive and industrial power electronics.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the PSMN2R6-30YLC,115?
    The maximum drain to source voltage (Vdss) is 30V.
  2. What is the continuous drain current (Id) at 25°C?
    The continuous drain current (Id) at 25°C is 100A (Tc).
  3. What is the on-resistance (Rds On) of the MOSFET?
    The on-resistance (Rds On) is 2.8 mOhm at 25A and 10V Vgs.
  4. What is the maximum power dissipation of the device?
    The maximum power dissipation is 106W (Tc).
  5. What is the package type of the PSMN2R6-30YLC,115?
    The package types are LFPAK56 and Power-SO8.
  6. What is the operating temperature range of the MOSFET?
    The operating temperature range is from -55°C to 175°C (TJ).
  7. What is the gate charge (Qg) at 10V Vgs?
    The gate charge (Qg) at 10V Vgs is 39nC.
  8. What are some common applications of the PSMN2R6-30YLC,115?
    Common applications include power management systems, switching power supplies, motor control and drive systems, high-frequency switching applications, and automotive and industrial power electronics.
  9. What is the input capacitance (Ciss) at 15V Vds?
    The input capacitance (Ciss) at 15V Vds is 2435pF.
  10. Is the MOSFET suitable for surface mounting?
    Yes, the MOSFET is suitable for surface mounting.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2435 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):106W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN2R6-30YLC,115 PSMN2R2-30YLC,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 25A, 10V 2.15mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 1.95V @ 1mA 1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2435 pF @ 15 V 3310 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 106W (Tc) 141W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669

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