Overview
The Nexperia PSMN1R8-40YLC,115 is a high-performance N-channel MOSFET designed for a wide range of applications. This device is part of Nexperia's NextPower series, known for its high reliability and optimized performance. The MOSFET features a low on-state resistance and high current handling capabilities, making it suitable for demanding power management tasks.
Key Specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Part Number | PSMN1R8-40YLC,115 |
| Package | SOT-669 (PowerSO8) |
| Drain-Source Voltage (Vds) | 40 V |
| Drain Current (Id) | 100 A |
| On-State Resistance (Rds(on)) | 1.8 mΩ @ 10 V |
| Power Dissipation (Pd) | 272 W |
| Gate-Source Voltage (Vgs) | ±20 V |
| Gate Charge (Qg) | 15.5 nC |
| Mounting Style | SMD/SMT |
| Type of Transistor | N-MOSFET, unipolar |
| Kind of Channel | Enhanced |
Key Features
- High reliability with qualification to 175°C.
- Optimized for 4.5 V gate drive using NextPower technology.
- Low on-state resistance of 1.8 mΩ at 10 V, enhancing efficiency in power management.
- Fast switching characteristics, making it suitable for high-frequency applications.
- Higher operating power due to low thermal resistance.
Applications
- Class D amplifiers.
- DC-to-DC converters.
- Motion control systems.
- Switched-mode power supplies.
- Computing, communications, consumer, and industrial applications.
Q & A
- What is the drain-source voltage rating of the PSMN1R8-40YLC,115 MOSFET?
The drain-source voltage rating is 40 V. - What is the maximum drain current this MOSFET can handle?
The maximum drain current is 100 A. - What is the on-state resistance of this MOSFET at 10 V?
The on-state resistance is 1.8 mΩ at 10 V. - What type of package does the PSMN1R8-40YLC,115 come in?
The MOSFET comes in a SOT-669 (PowerSO8) package. - What are the typical applications for this MOSFET?
Typical applications include Class D amplifiers, DC-to-DC converters, motion control systems, and switched-mode power supplies. - Is this MOSFET suitable for high-frequency applications?
Yes, it is suitable for high-frequency applications due to its fast switching characteristics. - What is the gate-source voltage rating for this MOSFET?
The gate-source voltage rating is ±20 V. - What is the power dissipation capability of this MOSFET?
The power dissipation capability is 272 W. - Is this MOSFET RoHS compliant?
Yes, the PSMN1R8-40YLC,115 is RoHS compliant. - What technology is used in this MOSFET?
This MOSFET uses TrenchMOS technology.
