PSMN069-100YS,115
  • Share:

Nexperia USA Inc. PSMN069-100YS,115

Manufacturer No:
PSMN069-100YS,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 17A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN069-100YS,115 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Nexperia USA Inc. This device is part of the LFPAK56 and Power-SO8 package families, known for their advanced TrenchMOS technology. It is designed to offer high efficiency and reliability in various power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)100 V
Current Rating (Id)17 A (Tc)
Power Dissipation (Pd)56 W (Tc)
On-Resistance (Rds(on))72.4 mΩ
Package TypeLFPAK56, Power-SO8

Key Features

  • Advanced TrenchMOS technology for low Rds(on) and low gate charge, enhancing efficiency in switching power converters.
  • High current and power handling capabilities, making it suitable for demanding applications.
  • Improved mechanical and thermal characteristics, ensuring reliable performance under various operating conditions.

Applications

  • Switching power converters and DC-DC converters.
  • Motor control and drive systems.
  • Power supplies and battery management systems.
  • Automotive and industrial power management systems.

Q & A

  1. What is the voltage rating of the PSMN069-100YS,115 MOSFET? The voltage rating is 100 V.
  2. What is the current rating of the PSMN069-100YS,115 MOSFET? The current rating is 17 A (Tc).
  3. What is the power dissipation of the PSMN069-100YS,115 MOSFET? The power dissipation is 56 W (Tc).
  4. What package types are available for the PSMN069-100YS,115 MOSFET? The available package types are LFPAK56 and Power-SO8.
  5. What technology is used in the PSMN069-100YS,115 MOSFET? The device uses advanced TrenchMOS technology.
  6. What are the key benefits of the TrenchMOS technology in the PSMN069-100YS,115 MOSFET? The key benefits include low Rds(on) and low gate charge, leading to high efficiency gains in switching power converters.
  7. What are some common applications of the PSMN069-100YS,115 MOSFET? Common applications include switching power converters, motor control systems, power supplies, and automotive and industrial power management systems.
  8. How does the PSMN069-100YS,115 MOSFET improve mechanical and thermal characteristics? It features improved mechanical and thermal characteristics due to its advanced package design and materials.
  9. Where can I find detailed specifications and datasheets for the PSMN069-100YS,115 MOSFET? Detailed specifications and datasheets can be found on the Nexperia website or through authorized distributors like Digi-Key and Mouser Electronics.
  10. Is the PSMN069-100YS,115 MOSFET suitable for high-power applications? Yes, it is designed to handle high current and power, making it suitable for demanding high-power applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:72.4mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:645 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):56W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$0.83
484

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN069-100YS,115 PSMN039-100YS,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 28.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 72.4mOhm @ 5A, 10V 39.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 645 pF @ 50 V 1847 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 56W (Tc) 74W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669

Related Product By Categories

IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK

Related Product By Brand

BAT54S-QR
BAT54S-QR
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BC847BS/ZLF
BC847BS/ZLF
Nexperia USA Inc.
GENERAL-PURPOSE TRANSISTOR
PEMH11,315
PEMH11,315
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V SOT666
BC846AW,135
BC846AW,135
Nexperia USA Inc.
TRANS NPN 65V 0.1A SOT323
BC807-25QCZ
BC807-25QCZ
Nexperia USA Inc.
TRANS 45V 0.5A DFN1412D-3
PBSS304NZ,135
PBSS304NZ,135
Nexperia USA Inc.
TRANS NPN 60V 5.2A SOT223
PDTD123YT/APGR
PDTD123YT/APGR
Nexperia USA Inc.
PDTD123YT/APGR
74HC2G66DP-Q100H
74HC2G66DP-Q100H
Nexperia USA Inc.
IC SWITCH DUAL SPST 8TSSOP
74LVC126APW,112
74LVC126APW,112
Nexperia USA Inc.
IC BUF NON-INVERT 3.6V 14TSSOP
74HC2G08DP,125
74HC2G08DP,125
Nexperia USA Inc.
IC GATE AND 2CH 2-INP 8TSSOP
74HC2GU04GW-Q100H
74HC2GU04GW-Q100H
Nexperia USA Inc.
IC INVERTER 2CH 2-INP 6TSSOP
74HC165D-Q100,118
74HC165D-Q100,118
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16SOIC