PSMN069-100YS,115
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Nexperia USA Inc. PSMN069-100YS,115

Manufacturer No:
PSMN069-100YS,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 17A LFPAK56
Delivery:
Payment:
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Product Introduction

Overview

The PSMN069-100YS,115 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Nexperia USA Inc. This device is part of the LFPAK56 and Power-SO8 package families, known for their advanced TrenchMOS technology. It is designed to offer high efficiency and reliability in various power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)100 V
Current Rating (Id)17 A (Tc)
Power Dissipation (Pd)56 W (Tc)
On-Resistance (Rds(on))72.4 mΩ
Package TypeLFPAK56, Power-SO8

Key Features

  • Advanced TrenchMOS technology for low Rds(on) and low gate charge, enhancing efficiency in switching power converters.
  • High current and power handling capabilities, making it suitable for demanding applications.
  • Improved mechanical and thermal characteristics, ensuring reliable performance under various operating conditions.

Applications

  • Switching power converters and DC-DC converters.
  • Motor control and drive systems.
  • Power supplies and battery management systems.
  • Automotive and industrial power management systems.

Q & A

  1. What is the voltage rating of the PSMN069-100YS,115 MOSFET? The voltage rating is 100 V.
  2. What is the current rating of the PSMN069-100YS,115 MOSFET? The current rating is 17 A (Tc).
  3. What is the power dissipation of the PSMN069-100YS,115 MOSFET? The power dissipation is 56 W (Tc).
  4. What package types are available for the PSMN069-100YS,115 MOSFET? The available package types are LFPAK56 and Power-SO8.
  5. What technology is used in the PSMN069-100YS,115 MOSFET? The device uses advanced TrenchMOS technology.
  6. What are the key benefits of the TrenchMOS technology in the PSMN069-100YS,115 MOSFET? The key benefits include low Rds(on) and low gate charge, leading to high efficiency gains in switching power converters.
  7. What are some common applications of the PSMN069-100YS,115 MOSFET? Common applications include switching power converters, motor control systems, power supplies, and automotive and industrial power management systems.
  8. How does the PSMN069-100YS,115 MOSFET improve mechanical and thermal characteristics? It features improved mechanical and thermal characteristics due to its advanced package design and materials.
  9. Where can I find detailed specifications and datasheets for the PSMN069-100YS,115 MOSFET? Detailed specifications and datasheets can be found on the Nexperia website or through authorized distributors like Digi-Key and Mouser Electronics.
  10. Is the PSMN069-100YS,115 MOSFET suitable for high-power applications? Yes, it is designed to handle high current and power, making it suitable for demanding high-power applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:72.4mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:645 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):56W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN069-100YS,115 PSMN039-100YS,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 28.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 72.4mOhm @ 5A, 10V 39.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 645 pF @ 50 V 1847 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 56W (Tc) 74W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669

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