PSMN039-100YS,115
  • Share:

Nexperia USA Inc. PSMN039-100YS,115

Manufacturer No:
PSMN039-100YS,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 28.1A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN039-100YS,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of the Advanced TrenchMOS technology family, known for its low RDSon (on-state resistance) and low gate charge, which contribute to high efficiency in switching power converters. The MOSFET is packaged in the LFPAK (Leadless FPAK) SOT-669 package, offering improved mechanical and thermal characteristics.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 100 V
ID (Continuous Drain Current) 28.1 A
RDS(on) (On-State Resistance) 39.5 mΩ @ 10 V, 15 A
Ptot (Total Power Dissipation) 74 W
VGS(th) (Threshold Voltage) 4 V @ 1 mA V
Package LFPAK (SOT-669)

Key Features

  • Advanced TrenchMOS technology for low RDSon and low gate charge.
  • High efficiency gains in switching power converters.
  • Improved mechanical and thermal characteristics due to the LFPAK package.
  • High continuous drain current (28.1 A) and total power dissipation (74 W).
  • Low threshold voltage (4 V @ 1 mA) for easy gate drive.

Applications

  • Switching power converters and power supplies.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Power management in automotive and industrial systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PSMN039-100YS,115?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the continuous drain current (ID) rating of this MOSFET?

    The continuous drain current (ID) rating is 28.1 A.

  3. What is the on-state resistance (RDSon) of the PSMN039-100YS,115?

    The on-state resistance (RDSon) is 39.5 mΩ at 10 V and 15 A.

  4. What package type is used for the PSMN039-100YS,115?

    The package type is LFPAK (SOT-669).

  5. What are the key benefits of the Advanced TrenchMOS technology used in this MOSFET?

    The key benefits include low RDSon, low gate charge, and improved mechanical and thermal characteristics.

  6. What are some common applications for the PSMN039-100YS,115?

    Common applications include switching power converters, motor control systems, high-frequency switching applications, and power management in automotive and industrial systems.

  7. What is the total power dissipation (Ptot) rating of this MOSFET?

    The total power dissipation (Ptot) rating is 74 W.

  8. What is the threshold voltage (VGS(th)) of the PSMN039-100YS,115?

    The threshold voltage (VGS(th)) is 4 V at 1 mA.

  9. Is the PSMN039-100YS,115 RoHS compliant?
  10. Where can I find detailed specifications and datasheets for the PSMN039-100YS,115?

    Detailed specifications and datasheets can be found on the Nexperia website, as well as through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:28.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:39.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1847 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$0.90
523

Please send RFQ , we will respond immediately.

Similar Products

Part Number PSMN039-100YS,115 PSMN069-100YS,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 28.1A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 39.5mOhm @ 15A, 10V 72.4mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1847 pF @ 50 V 645 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 74W (Tc) 56W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3

Related Product By Brand

BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
BAT720,235
BAT720,235
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA TO236AB
PMEG6010ELR-QX
PMEG6010ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZX84-B10/DG/B3215
BZX84-B10/DG/B3215
Nexperia USA Inc.
DIODE ZENER
BZX384-B10,115
BZX384-B10,115
Nexperia USA Inc.
DIODE ZENER 10V 300MW SOD323
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCP56-QF
BCP56-QF
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
PMZ600UNEYL
PMZ600UNEYL
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
74AHC273PW,112
74AHC273PW,112
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20TSSOP
74HC2G08DP,125
74HC2G08DP,125
Nexperia USA Inc.
IC GATE AND 2CH 2-INP 8TSSOP
74HC04D-Q100,118
74HC04D-Q100,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SO
74LVC373ADB112
74LVC373ADB112
Nexperia USA Inc.
NOW NEXPERIA 74LVC373ADB - BUS D