PSMN039-100YS,115
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Nexperia USA Inc. PSMN039-100YS,115

Manufacturer No:
PSMN039-100YS,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 28.1A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PSMN039-100YS,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of the Advanced TrenchMOS technology family, known for its low RDSon (on-state resistance) and low gate charge, which contribute to high efficiency in switching power converters. The MOSFET is packaged in the LFPAK (Leadless FPAK) SOT-669 package, offering improved mechanical and thermal characteristics.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 100 V
ID (Continuous Drain Current) 28.1 A
RDS(on) (On-State Resistance) 39.5 mΩ @ 10 V, 15 A
Ptot (Total Power Dissipation) 74 W
VGS(th) (Threshold Voltage) 4 V @ 1 mA V
Package LFPAK (SOT-669)

Key Features

  • Advanced TrenchMOS technology for low RDSon and low gate charge.
  • High efficiency gains in switching power converters.
  • Improved mechanical and thermal characteristics due to the LFPAK package.
  • High continuous drain current (28.1 A) and total power dissipation (74 W).
  • Low threshold voltage (4 V @ 1 mA) for easy gate drive.

Applications

  • Switching power converters and power supplies.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Power management in automotive and industrial systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PSMN039-100YS,115?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the continuous drain current (ID) rating of this MOSFET?

    The continuous drain current (ID) rating is 28.1 A.

  3. What is the on-state resistance (RDSon) of the PSMN039-100YS,115?

    The on-state resistance (RDSon) is 39.5 mΩ at 10 V and 15 A.

  4. What package type is used for the PSMN039-100YS,115?

    The package type is LFPAK (SOT-669).

  5. What are the key benefits of the Advanced TrenchMOS technology used in this MOSFET?

    The key benefits include low RDSon, low gate charge, and improved mechanical and thermal characteristics.

  6. What are some common applications for the PSMN039-100YS,115?

    Common applications include switching power converters, motor control systems, high-frequency switching applications, and power management in automotive and industrial systems.

  7. What is the total power dissipation (Ptot) rating of this MOSFET?

    The total power dissipation (Ptot) rating is 74 W.

  8. What is the threshold voltage (VGS(th)) of the PSMN039-100YS,115?

    The threshold voltage (VGS(th)) is 4 V at 1 mA.

  9. Is the PSMN039-100YS,115 RoHS compliant?
  10. Where can I find detailed specifications and datasheets for the PSMN039-100YS,115?

    Detailed specifications and datasheets can be found on the Nexperia website, as well as through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:28.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:39.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1847 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN039-100YS,115 PSMN069-100YS,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 28.1A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 39.5mOhm @ 15A, 10V 72.4mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1847 pF @ 50 V 645 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 74W (Tc) 56W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669

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