PMXB360ENEAZ
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Nexperia USA Inc. PMXB360ENEAZ

Manufacturer No:
PMXB360ENEAZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 1.1A DFN1010D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMXB360ENEAZ is an N-Channel MOSFET produced by Nexperia USA Inc. This device is designed for high-performance applications, particularly in thermally demanding environments. It is part of Nexperia's automotive-grade MOSFETs, which are built to withstand more hostile operating conditions compared to those used in home and portable applications. The PMXB360ENEAZ features a maximum operating temperature of up to 150°C, making it suitable for a wide range of industrial and automotive uses.

Key Specifications

Parameter Value
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 130pF @ 40V
Vgs (Max) ±20V
Power Dissipation (Max) 400mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs 450 mOhm @ 1.1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 3-XDFN Exposed Pad (DFN1010D-3)

Key Features

  • High Temperature Rating: The PMXB360ENEAZ can operate up to 150°C, making it ideal for thermally demanding environments.
  • Low On-Resistance: With a maximum Rds On of 450 mOhm at 1.1A and 10V, this MOSFET offers efficient switching and low power loss.
  • Compact Package: The 3-XDFN Exposed Pad package is designed for space-saving and thermal efficiency.
  • Automotive Grade: This MOSFET is designed to meet the stringent requirements of automotive applications, ensuring reliability and durability.
  • High Current Capability: The device can handle continuous drain currents of up to 1.1A at 25°C.

Applications

  • Automotive Systems: Suitable for various automotive applications such as power management, motor control, and battery management systems.
  • Industrial Power Systems: Used in industrial power supplies, motor drives, and other high-power applications requiring reliable and efficient switching.
  • Consumer Electronics: Can be used in high-performance consumer electronics that require robust and efficient power management.
  • Renewable Energy Systems: Applicable in solar and wind power systems for efficient power conversion and management.

Q & A

  1. What is the maximum operating temperature of the PMXB360ENEAZ?

    The maximum operating temperature is up to 150°C.

  2. What is the drain to source voltage (Vdss) of the PMXB360ENEAZ?

    The drain to source voltage (Vdss) is 80V.

  3. What is the continuous drain current (Id) at 25°C?

    The continuous drain current (Id) at 25°C is 1.1A.

  4. What is the package type of the PMXB360ENEAZ?

    The package type is 3-XDFN Exposed Pad (DFN1010D-3).

  5. What are the typical applications of the PMXB360ENEAZ?

    Typical applications include automotive systems, industrial power systems, consumer electronics, and renewable energy systems.

  6. What is the maximum power dissipation of the PMXB360ENEAZ?

    The maximum power dissipation is 400mW (Ta) and 6.25W (Tc).

  7. What is the gate charge (Qg) at 10V?

    The gate charge (Qg) at 10V is 4.5nC.

  8. What is the input capacitance (Ciss) at 40V?

    The input capacitance (Ciss) at 40V is 130pF.

  9. Is the PMXB360ENEAZ suitable for high-temperature environments?

    Yes, it is designed to operate in thermally demanding environments up to 150°C.

  10. What is the mounting type of the PMXB360ENEAZ?

    The mounting type is Surface Mount.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:450mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id:2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:130 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta), 6.25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1010D-3
Package / Case:3-XDFN Exposed Pad
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