PMV48XP,215
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Nexperia USA Inc. PMV48XP,215

Manufacturer No:
PMV48XP,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 3.5A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV48XP,215 is a P-channel enhancement-mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component is housed in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, utilizing Trench MOSFET technology. It is designed for high-performance applications requiring fast switching and low on-state resistance.

The PMV48XP,215 is suitable for a variety of applications, including high-side load switches, high-speed line drivers, relay drivers, and general switching circuits. Its logic-level compatibility and very fast switching capabilities make it an ideal choice for many modern electronic designs.

Key Specifications

Parameter Value Unit
Channel Type P Channel
Drain Source Voltage (Vds) 20 V
Continuous Drain Current (Id) 3.5 A
Drain Source On State Resistance (Rds(on)) 0.048 Ω
Transistor Case Style SOT-23
Transistor Mounting Surface Mount
Power Dissipation (Pd) 510 mW
Rds(on) Test Voltage 4.5 V
Gate Source Threshold Voltage Max (Vgs(th)) 1 V
No. of Pins 3
Moisture Sensitivity Level (MSL) MSL 1 - Unlimited
Operating Temperature (Tj) -55°C to 150°C °C

Key Features

  • Logic-level compatible
  • Trench MOSFET technology for high efficiency and low on-state resistance
  • Very fast switching capabilities
  • Low Rds(on) of 0.048 Ω at Vgs = -4.5 V and Id = -2.4 A
  • High continuous drain current of 3.5 A
  • Surface mount SOT23 package for compact designs
  • RoHS compliant and lead-free

Applications

  • High-side load switches
  • High-speed line drivers
  • Relay drivers
  • Switching circuits
  • Power management in industrial and consumer electronics

Q & A

  1. What is the PMV48XP,215?

    The PMV48XP,215 is a P-channel enhancement-mode Field-Effect Transistor (FET) produced by Nexperia USA Inc.

  2. What package type does the PMV48XP,215 use?

    The PMV48XP,215 is housed in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.

  3. What is the maximum drain-source voltage (Vds) of the PMV48XP,215?

    The maximum drain-source voltage (Vds) is 20 V.

  4. What is the continuous drain current (Id) of the PMV48XP,215?

    The continuous drain current (Id) is 3.5 A.

  5. What is the on-state resistance (Rds(on)) of the PMV48XP,215?

    The on-state resistance (Rds(on)) is 0.048 Ω at Vgs = -4.5 V and Id = -2.4 A.

  6. Is the PMV48XP,215 RoHS compliant?
  7. What are the typical applications of the PMV48XP,215?

    The PMV48XP,215 is typically used in high-side load switches, high-speed line drivers, relay drivers, and switching circuits.

  8. What is the operating temperature range of the PMV48XP,215?

    The operating temperature range is from -55°C to 150°C.

  9. What is the moisture sensitivity level (MSL) of the PMV48XP,215?

    The moisture sensitivity level (MSL) is MSL 1 - Unlimited.

  10. Is the PMV48XP,215 logic-level compatible?

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:55mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):510mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

$0.53
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Same Series
PMV48XPVL
PMV48XPVL
MOSFET P-CH 20V 3.5A TO236AB

Similar Products

Part Number PMV48XP,215 PMV48XPA215
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Active Active
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 55mOhm @ 2.4A, 4.5V -
Vgs(th) (Max) @ Id 1.25V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V -
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 510mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package TO-236AB -
Package / Case TO-236-3, SC-59, SOT-23-3 -

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