Overview
The PMV48XPA215 is a P-channel Trench MOSFET produced by NXP USA Inc. This component is designed to offer high performance and reliability in various electronic systems. It is part of Nexperia's portfolio, which NXP acquired, and is known for its advanced trench technology that enhances power efficiency and reduces thermal resistance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 20 | V |
| VGS (Gate-Source Voltage) | ±20 | V |
| ID (Continuous Drain Current) | -4.5 | A |
| Ptot (Total Power Dissipation) | 2.5 | W |
| RDS(on) (On-State Drain-Source Resistance) | 45 | mΩ |
| Tj (Junction Temperature) | -55 to 150 | °C |
Key Features
- Low On-State Resistance: The PMV48XPA215 features a low RDS(on) of 45 mΩ, which minimizes power losses and enhances efficiency.
- High Current Capability: It can handle a continuous drain current of -4.5 A, making it suitable for high-power applications.
- Advanced Trench Technology: This MOSFET utilizes advanced trench technology to reduce thermal resistance and improve overall performance.
- Compact Package: Available in compact packages, it is ideal for space-constrained designs.
- Wide Operating Temperature Range: The component can operate over a wide junction temperature range of -55 to 150 °C.
Applications
- Power Management Systems: Suitable for use in power management systems due to its high efficiency and low on-state resistance.
- Automotive Systems: Often used in automotive applications such as power steering, braking systems, and other high-power electronic controls.
- Industrial Control Systems: Used in industrial control systems, motor control, and power supplies.
- Consumer Electronics: Found in various consumer electronics requiring high-power switching, such as power adapters and battery chargers.
Q & A
- What is the maximum drain-source voltage of the PMV48XPA215?
The maximum drain-source voltage (VDS) is 20 V.
- What is the continuous drain current rating of this MOSFET?
The continuous drain current (ID) is -4.5 A.
- What is the on-state drain-source resistance of the PMV48XPA215?
The on-state drain-source resistance (RDS(on)) is 45 mΩ.
- What is the operating junction temperature range of this component?
The operating junction temperature range is -55 to 150 °C.
- What technology is used in the PMV48XPA215?
It uses advanced trench technology.
- Where is the PMV48XPA215 commonly used?
It is commonly used in automotive, industrial, and consumer electronics applications.
- What is the total power dissipation of the PMV48XPA215?
The total power dissipation (Ptot) is 2.5 W.
- What is the gate-source voltage rating of this MOSFET?
The gate-source voltage (VGS) rating is ±20 V.
- Why is the PMV48XPA215 preferred in high-power applications?
It is preferred due to its high current capability, low on-state resistance, and advanced trench technology.
- Where can I find detailed specifications and datasheets for the PMV48XPA215?
Detailed specifications and datasheets can be found on the Nexperia website or through authorized distributors like Digi-Key and Mouser.
