PMBF170,235
  • Share:

Nexperia USA Inc. PMBF170,235

Manufacturer No:
PMBF170,235
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMBF170,235 is an N-Channel MOSFET produced by Nexperia USA Inc. This component is designed for a variety of applications requiring low power consumption and high efficiency. It features a surface mount package in the TO-236AB (SOT-23-3) format, making it suitable for compact and modern electronic designs.

Key Specifications

ParameterValue
Voltage Rating (Vds)60 V
Continuous Drain Current (Id)300 mA (Ta), 200 mA (Tc)
Power Dissipation (Pd)830 mW
Maximum Operating Temperature+150°C
Channel ModeEnhancement
PackagingTO-236AB (SOT-23-3)

Key Features

  • Low power consumption and high efficiency.
  • Compact surface mount package (TO-236AB/SOT-23-3) for space-saving designs.
  • Enhancement mode N-Channel MOSFET for reliable switching operations.
  • High voltage rating of 60 V and continuous drain current of 300 mA.
  • Maximum operating temperature of +150°C, suitable for a wide range of applications.

Applications

The PMBF170,235 MOSFET is suitable for various applications including but not limited to:

  • Power switching and power management in consumer electronics.
  • Automotive systems requiring low power and high reliability.
  • Industrial control systems and motor control circuits.
  • Portable electronics and battery-powered devices.

Q & A

  1. What is the voltage rating of the PMBF170,235 MOSFET?
    The voltage rating of the PMBF170,235 MOSFET is 60 V.
  2. What is the continuous drain current of the PMBF170,235?
    The continuous drain current is 300 mA (Ta) and 200 mA (Tc).
  3. What is the power dissipation of the PMBF170,235?
    The power dissipation is 830 mW.
  4. What is the maximum operating temperature of the PMBF170,235?
    The maximum operating temperature is +150°C.
  5. What type of packaging does the PMBF170,235 use?
    The PMBF170,235 uses the TO-236AB (SOT-23-3) surface mount package.
  6. Is the PMBF170,235 suitable for automotive applications?
    Yes, it is suitable for automotive systems due to its low power consumption and high reliability.
  7. Can the PMBF170,235 be used in industrial control systems?
    Yes, it can be used in industrial control systems and motor control circuits.
  8. What is the channel mode of the PMBF170,235 MOSFET?
    The channel mode is enhancement.
  9. Is the PMBF170,235 suitable for portable electronics?
    Yes, it is suitable for portable electronics and battery-powered devices.
  10. Where can I find the datasheet for the PMBF170,235?
    You can find the datasheet on the official Nexperia website or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.40
1,714

Please send RFQ , we will respond immediately.

Same Series
PMBF170,215
PMBF170,215
MOSFET N-CH 60V 300MA TO236AB

Similar Products

Part Number PMBF170,235 PMBF170,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 40 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70

Related Product By Brand

PTVS14VS1UR/8X
PTVS14VS1UR/8X
Nexperia USA Inc.
TVS DIODE 14VWM 23.2VC SOD123W
BAT720,235
BAT720,235
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA TO236AB
PDZ33B,115
PDZ33B,115
Nexperia USA Inc.
DIODE ZENER 33V 400MW SOD323
PDZ27BF
PDZ27BF
Nexperia USA Inc.
DIODE ZENER 27V 400MW SOD323
BCP56-10TX
BCP56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC846BM,315
BC846BM,315
Nexperia USA Inc.
TRANS NPN 65V 0.1A DFN1006B-3
PBSS8110TVL
PBSS8110TVL
Nexperia USA Inc.
PBSS8110T/SOT23/TO-236AB
PDTA124EU,135
PDTA124EU,135
Nexperia USA Inc.
NEXPERIA PDTA124EU - SMALL SIGNA
2N7002P,235
2N7002P,235
Nexperia USA Inc.
MOSFET N-CH 60V 360MA TO236AB
74LVC4066PW,112
74LVC4066PW,112
Nexperia USA Inc.
IC SWITCH QUAD SPST 14TSSOP
HEF4027BT,653
HEF4027BT,653
Nexperia USA Inc.
IC FF JK TYPE DUAL 1BIT 16SO
BUK7Y2R5-40H,115
BUK7Y2R5-40H,115
Nexperia USA Inc.
POWER FIELD-EFFECT TRANSISTOR