PMBF170,215
  • Share:

Nexperia USA Inc. PMBF170,215

Manufacturer No:
PMBF170,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMBF170,215 is an N-Channel MOSFET produced by Nexperia USA Inc. This device is part of the TrenchMOS family, known for its high efficiency and reliability. It is packaged in a TO-236AB (SOT23-3) surface mount package, making it suitable for a wide range of applications where space is limited. The PMBF170,215 is designed to handle high voltage and current requirements, making it a versatile component in various electronic systems.

Key Specifications

ParameterTypical ValueMaximum ValueUnit
Drain-Source Voltage (VDS)-60V
Continuous Drain Current (ID)-300mA
Pulse Drain Current (IDM)-1.5A
Gate-Source Voltage (VGS)-20V
Threshold Voltage (VGS(th))1.53.5V
On-State Resistance (RDS(on))2.5-Ω
Power Dissipation (PTOT)-830mW
Junction Temperature (Tj)-150°C

Key Features

  • High efficiency due to low on-state resistance (RDS(on)) of 2.5 Ω.
  • Compact TO-236AB (SOT23-3) surface mount package for space-saving designs.
  • High voltage handling capability with a drain-source voltage (VDS) of up to 60 V.
  • Continuous drain current (ID) of 300 mA, suitable for various power management applications.
  • Low threshold voltage (VGS(th)) range of 1.5 to 3.5 V, ensuring reliable switching performance.

Applications

The PMBF170,215 is suitable for a variety of applications, including:

  • Power management in consumer electronics, such as smartphones and laptops.
  • Automotive systems, including battery management and motor control.
  • Industrial control systems, such as power supplies and motor drives.
  • Audio and video equipment, where high efficiency and low noise are critical.

Q & A

  1. What is the maximum drain-source voltage of the PMBF170,215?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the continuous drain current of the PMBF170,215?
    The continuous drain current (ID) is 300 mA.
  3. What is the package type of the PMBF170,215?
    The PMBF170,215 is packaged in a TO-236AB (SOT23-3) surface mount package.
  4. What is the typical on-state resistance of the PMBF170,215?
    The typical on-state resistance (RDS(on)) is 2.5 Ω.
  5. What is the maximum junction temperature of the PMBF170,215?
    The maximum junction temperature (Tj) is 150 °C.
  6. What are some common applications of the PMBF170,215?
    Common applications include power management in consumer electronics, automotive systems, industrial control systems, and audio/video equipment.
  7. What is the threshold voltage range of the PMBF170,215?
    The threshold voltage (VGS(th)) range is from 1.5 to 3.5 V.
  8. How much power can the PMBF170,215 dissipate?
    The PMBF170,215 can dissipate up to 830 mW of power.
  9. What is the pulse drain current of the PMBF170,215?
    The pulse drain current (IDM) is up to 1.5 A.
  10. Where can I find detailed specifications for the PMBF170,215?
    Detailed specifications can be found on the datasheet available from sources like Digi-Key, Mouser, and the official Nexperia website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.40
772

Please send RFQ , we will respond immediately.

Same Series
PMBF170,215
PMBF170,215
MOSFET N-CH 60V 300MA TO236AB

Similar Products

Part Number PMBF170,215 PMBF170,235
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 40 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK

Related Product By Brand

BAT854CW,115
BAT854CW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
PMEG4010AESBYL
PMEG4010AESBYL
Nexperia USA Inc.
DIODE SCHOTTKY 40V 1A SOD993
PDZ3.9BGWX
PDZ3.9BGWX
Nexperia USA Inc.
DIODE ZENER 3.9V 365MW SOD123
BC847BS-QX
BC847BS-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
PUMD10/ZLF
PUMD10/ZLF
Nexperia USA Inc.
TRANS PREBIAS
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
74HC4851D-Q100,118
74HC4851D-Q100,118
Nexperia USA Inc.
IC MUX/DEMUX 8CH ANLG 16SOIC
74HC244D,652
74HC244D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74LVC08ADB,118
74LVC08ADB,118
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SSOP
HEF4047BT,652
HEF4047BT,652
Nexperia USA Inc.
IC MULTIVIBRATOR 50NS 14SO
74LV4094DB,112
74LV4094DB,112
Nexperia USA Inc.
IC 8ST SHIFT/STORE BUS 16-SSOP
74HC137D,652
74HC137D,652
Nexperia USA Inc.
IC DECODER/DEMUX 1 X 3:8 16SO