PMBF170,215
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Nexperia USA Inc. PMBF170,215

Manufacturer No:
PMBF170,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA TO236AB
Delivery:
Payment:
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Product Introduction

Overview

The PMBF170,215 is an N-Channel MOSFET produced by Nexperia USA Inc. This device is part of the TrenchMOS family, known for its high efficiency and reliability. It is packaged in a TO-236AB (SOT23-3) surface mount package, making it suitable for a wide range of applications where space is limited. The PMBF170,215 is designed to handle high voltage and current requirements, making it a versatile component in various electronic systems.

Key Specifications

ParameterTypical ValueMaximum ValueUnit
Drain-Source Voltage (VDS)-60V
Continuous Drain Current (ID)-300mA
Pulse Drain Current (IDM)-1.5A
Gate-Source Voltage (VGS)-20V
Threshold Voltage (VGS(th))1.53.5V
On-State Resistance (RDS(on))2.5-Ω
Power Dissipation (PTOT)-830mW
Junction Temperature (Tj)-150°C

Key Features

  • High efficiency due to low on-state resistance (RDS(on)) of 2.5 Ω.
  • Compact TO-236AB (SOT23-3) surface mount package for space-saving designs.
  • High voltage handling capability with a drain-source voltage (VDS) of up to 60 V.
  • Continuous drain current (ID) of 300 mA, suitable for various power management applications.
  • Low threshold voltage (VGS(th)) range of 1.5 to 3.5 V, ensuring reliable switching performance.

Applications

The PMBF170,215 is suitable for a variety of applications, including:

  • Power management in consumer electronics, such as smartphones and laptops.
  • Automotive systems, including battery management and motor control.
  • Industrial control systems, such as power supplies and motor drives.
  • Audio and video equipment, where high efficiency and low noise are critical.

Q & A

  1. What is the maximum drain-source voltage of the PMBF170,215?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the continuous drain current of the PMBF170,215?
    The continuous drain current (ID) is 300 mA.
  3. What is the package type of the PMBF170,215?
    The PMBF170,215 is packaged in a TO-236AB (SOT23-3) surface mount package.
  4. What is the typical on-state resistance of the PMBF170,215?
    The typical on-state resistance (RDS(on)) is 2.5 Ω.
  5. What is the maximum junction temperature of the PMBF170,215?
    The maximum junction temperature (Tj) is 150 °C.
  6. What are some common applications of the PMBF170,215?
    Common applications include power management in consumer electronics, automotive systems, industrial control systems, and audio/video equipment.
  7. What is the threshold voltage range of the PMBF170,215?
    The threshold voltage (VGS(th)) range is from 1.5 to 3.5 V.
  8. How much power can the PMBF170,215 dissipate?
    The PMBF170,215 can dissipate up to 830 mW of power.
  9. What is the pulse drain current of the PMBF170,215?
    The pulse drain current (IDM) is up to 1.5 A.
  10. Where can I find detailed specifications for the PMBF170,215?
    Detailed specifications can be found on the datasheet available from sources like Digi-Key, Mouser, and the official Nexperia website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
PMBF170,235
PMBF170,235
MOSFET N-CH 60V 300MA TO236AB

Similar Products

Part Number PMBF170,215 PMBF170,235
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 40 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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