PMBF170,215
  • Share:

Nexperia USA Inc. PMBF170,215

Manufacturer No:
PMBF170,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMBF170,215 is an N-Channel MOSFET produced by Nexperia USA Inc. This device is part of the TrenchMOS family, known for its high efficiency and reliability. It is packaged in a TO-236AB (SOT23-3) surface mount package, making it suitable for a wide range of applications where space is limited. The PMBF170,215 is designed to handle high voltage and current requirements, making it a versatile component in various electronic systems.

Key Specifications

ParameterTypical ValueMaximum ValueUnit
Drain-Source Voltage (VDS)-60V
Continuous Drain Current (ID)-300mA
Pulse Drain Current (IDM)-1.5A
Gate-Source Voltage (VGS)-20V
Threshold Voltage (VGS(th))1.53.5V
On-State Resistance (RDS(on))2.5-Ω
Power Dissipation (PTOT)-830mW
Junction Temperature (Tj)-150°C

Key Features

  • High efficiency due to low on-state resistance (RDS(on)) of 2.5 Ω.
  • Compact TO-236AB (SOT23-3) surface mount package for space-saving designs.
  • High voltage handling capability with a drain-source voltage (VDS) of up to 60 V.
  • Continuous drain current (ID) of 300 mA, suitable for various power management applications.
  • Low threshold voltage (VGS(th)) range of 1.5 to 3.5 V, ensuring reliable switching performance.

Applications

The PMBF170,215 is suitable for a variety of applications, including:

  • Power management in consumer electronics, such as smartphones and laptops.
  • Automotive systems, including battery management and motor control.
  • Industrial control systems, such as power supplies and motor drives.
  • Audio and video equipment, where high efficiency and low noise are critical.

Q & A

  1. What is the maximum drain-source voltage of the PMBF170,215?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the continuous drain current of the PMBF170,215?
    The continuous drain current (ID) is 300 mA.
  3. What is the package type of the PMBF170,215?
    The PMBF170,215 is packaged in a TO-236AB (SOT23-3) surface mount package.
  4. What is the typical on-state resistance of the PMBF170,215?
    The typical on-state resistance (RDS(on)) is 2.5 Ω.
  5. What is the maximum junction temperature of the PMBF170,215?
    The maximum junction temperature (Tj) is 150 °C.
  6. What are some common applications of the PMBF170,215?
    Common applications include power management in consumer electronics, automotive systems, industrial control systems, and audio/video equipment.
  7. What is the threshold voltage range of the PMBF170,215?
    The threshold voltage (VGS(th)) range is from 1.5 to 3.5 V.
  8. How much power can the PMBF170,215 dissipate?
    The PMBF170,215 can dissipate up to 830 mW of power.
  9. What is the pulse drain current of the PMBF170,215?
    The pulse drain current (IDM) is up to 1.5 A.
  10. Where can I find detailed specifications for the PMBF170,215?
    Detailed specifications can be found on the datasheet available from sources like Digi-Key, Mouser, and the official Nexperia website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.40
772

Please send RFQ , we will respond immediately.

Same Series
PMBF170,235
PMBF170,235
MOSFET N-CH 60V 300MA TO236AB

Similar Products

Part Number PMBF170,215 PMBF170,235
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 40 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

PESD24VS5UD,115
PESD24VS5UD,115
Nexperia USA Inc.
TVS DIODE 24VWM 52VC 6TSOP
PMEG6010ELR-QX
PMEG6010ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZX84-C8V2,235
BZX84-C8V2,235
Nexperia USA Inc.
DIODE ZENER 8.2V 250MW TO236AB
PDZ6.2B,115
PDZ6.2B,115
Nexperia USA Inc.
DIODE ZENER 6.2V 400MW SOD323
BC856BS,115
BC856BS,115
Nexperia USA Inc.
TRANS 2PNP 65V 0.1A 6TSSOP
BC846BM,315
BC846BM,315
Nexperia USA Inc.
TRANS NPN 65V 0.1A DFN1006B-3
BCX56-10,135
BCX56-10,135
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
74AVCH8T245PW,112
74AVCH8T245PW,112
Nexperia USA Inc.
IC TRANSLATION TXRX 3.6V 24TSSOP
74LVC1G79GW,165
74LVC1G79GW,165
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT 5TSSOP
74HC573PW,118
74HC573PW,118
Nexperia USA Inc.
IC LATCH OCTAL D 3STATE 20TSSOP
BUK7Y2R5-40H,115
BUK7Y2R5-40H,115
Nexperia USA Inc.
POWER FIELD-EFFECT TRANSISTOR