BUK9Y8R7-60E,115
  • Share:

Nexperia USA Inc. BUK9Y8R7-60E,115

Manufacturer No:
BUK9Y8R7-60E,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 86A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9Y8R7-60E,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's TrenchMOS technology family and is packaged in an LFPAK56 (Power SO8) package. It is designed to offer low on-state resistance and high efficiency, making it suitable for a variety of applications, particularly in automotive and industrial sectors.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
RDS(on) (On-State Resistance)8.7 mΩ
VGS(th) (Threshold Voltage)1 - 2 V
ID (Continuous Drain Current)60 A
Ptot (Total Power Dissipation)200 W
PackageLFPAK56 (Power SO8)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-state resistance of 8.7 mΩ, enhancing efficiency and reducing power losses.
  • High continuous drain current of 60 A, suitable for high-power applications.
  • Logic level gate drive, making it compatible with a wide range of control signals.
  • Automotive qualified electrothermal model, ensuring reliability in demanding automotive environments.
  • TrenchMOS technology for improved performance and reliability.

Applications

  • Automotive systems: power steering, power windows, and other high-power applications.
  • Industrial power supplies and motor control systems.
  • Power tools and equipment.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the BUK9Y8R7-60E,115? The maximum drain-source voltage is 60 V.
  2. What is the on-state resistance of this MOSFET? The on-state resistance is 8.7 mΩ.
  3. What is the package type of the BUK9Y8R7-60E,115? It is packaged in an LFPAK56 (Power SO8) package.
  4. What is the continuous drain current rating of this device? The continuous drain current is 60 A.
  5. Is this MOSFET suitable for automotive applications? Yes, it is automotive qualified and includes an electrothermal model.
  6. What technology is used in this MOSFET? It uses TrenchMOS technology.
  7. What is the operating temperature range of the BUK9Y8R7-60E,115? The operating temperature range is -55°C to 150°C.
  8. Can this MOSFET be used in high-power industrial applications? Yes, it is suitable for high-power industrial applications due to its high current and low on-state resistance.
  9. Is the BUK9Y8R7-60E,115 compatible with logic level gate drive? Yes, it is compatible with logic level gate drive.
  10. Where can I purchase the BUK9Y8R7-60E,115? You can purchase it from distributors like Digi-Key, Mouser, and JAK Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:86A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:4570 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):147W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$1.34
606

Please send RFQ , we will respond immediately.

Related Product By Categories

FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAT54S-QR
BAT54S-QR
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
PMEG4030ER/8X
PMEG4030ER/8X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 3A SOD123W
PMEG2010BEA,115
PMEG2010BEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
BZX84J-B8V2,115
BZX84J-B8V2,115
Nexperia USA Inc.
DIODE ZENER 8.2V 550MW SOD323F
PDZ20BF
PDZ20BF
Nexperia USA Inc.
DIODE ZENER 20.39V 400MW SOD323
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BC857BQB-QZ
BC857BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
74HC244D,652
74HC244D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74HC541D-Q100J
74HC541D-Q100J
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74LVC273D,112
74LVC273D,112
Nexperia USA Inc.
NEXPERIA 74LVC273D - D FLIP-FLOP
74LVC1G79GW,165
74LVC1G79GW,165
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT 5TSSOP
74HC595PW,118
74HC595PW,118
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16TSSOP