BUK9Y8R7-60E,115
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Nexperia USA Inc. BUK9Y8R7-60E,115

Manufacturer No:
BUK9Y8R7-60E,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 86A LFPAK56
Delivery:
Payment:
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Product Introduction

Overview

The BUK9Y8R7-60E,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's TrenchMOS technology family and is packaged in an LFPAK56 (Power SO8) package. It is designed to offer low on-state resistance and high efficiency, making it suitable for a variety of applications, particularly in automotive and industrial sectors.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
RDS(on) (On-State Resistance)8.7 mΩ
VGS(th) (Threshold Voltage)1 - 2 V
ID (Continuous Drain Current)60 A
Ptot (Total Power Dissipation)200 W
PackageLFPAK56 (Power SO8)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-state resistance of 8.7 mΩ, enhancing efficiency and reducing power losses.
  • High continuous drain current of 60 A, suitable for high-power applications.
  • Logic level gate drive, making it compatible with a wide range of control signals.
  • Automotive qualified electrothermal model, ensuring reliability in demanding automotive environments.
  • TrenchMOS technology for improved performance and reliability.

Applications

  • Automotive systems: power steering, power windows, and other high-power applications.
  • Industrial power supplies and motor control systems.
  • Power tools and equipment.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the BUK9Y8R7-60E,115? The maximum drain-source voltage is 60 V.
  2. What is the on-state resistance of this MOSFET? The on-state resistance is 8.7 mΩ.
  3. What is the package type of the BUK9Y8R7-60E,115? It is packaged in an LFPAK56 (Power SO8) package.
  4. What is the continuous drain current rating of this device? The continuous drain current is 60 A.
  5. Is this MOSFET suitable for automotive applications? Yes, it is automotive qualified and includes an electrothermal model.
  6. What technology is used in this MOSFET? It uses TrenchMOS technology.
  7. What is the operating temperature range of the BUK9Y8R7-60E,115? The operating temperature range is -55°C to 150°C.
  8. Can this MOSFET be used in high-power industrial applications? Yes, it is suitable for high-power industrial applications due to its high current and low on-state resistance.
  9. Is the BUK9Y8R7-60E,115 compatible with logic level gate drive? Yes, it is compatible with logic level gate drive.
  10. Where can I purchase the BUK9Y8R7-60E,115? You can purchase it from distributors like Digi-Key, Mouser, and JAK Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:86A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:4570 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):147W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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