BUK9M3R3-40HX
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Nexperia USA Inc. BUK9M3R3-40HX

Manufacturer No:
BUK9M3R3-40HX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 80A LFPAK33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9M3R3-40HX is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of the LFPAK33 package series, known for its compact size and high power density. The MOSFET is designed to offer low on-state resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)40 V
RDS(on) (On-State Resistance)3.3 mΩ @ 25 A, 10 V
ID (Continuous Drain Current)80 A
Ptot (Total Power Dissipation)101 W
VGS(th) (Gate-Source Threshold Voltage)2.15 V @ 1 mA
PackageLFPAK33 (SOT-1210)
RoHS ComplianceYes

Key Features

  • Low on-state resistance of 3.3 mΩ, reducing power losses and improving efficiency.
  • High continuous drain current of 80 A, suitable for high-power applications.
  • Compact LFPAK33 package, enhancing thermal performance and reducing PCB space.
  • Logic level gate drive, making it compatible with a wide range of control signals.
  • High total power dissipation of 101 W, ensuring reliable operation under demanding conditions.

Applications

The BUK9M3R3-40HX MOSFET is ideal for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Automotive and industrial power management systems.

Q & A

  1. What is the maximum drain-source voltage of the BUK9M3R3-40HX MOSFET?
    The maximum drain-source voltage is 40 V.
  2. What is the on-state resistance of the BUK9M3R3-40HX at 25 A and 10 V?
    The on-state resistance is 3.3 mΩ.
  3. What is the continuous drain current rating of the BUK9M3R3-40HX?
    The continuous drain current rating is 80 A.
  4. What package type is used for the BUK9M3R3-40HX?
    The package type is LFPAK33 (SOT-1210).
  5. Is the BUK9M3R3-40HX RoHS compliant?
    Yes, it is RoHS compliant.
  6. What is the total power dissipation of the BUK9M3R3-40HX?
    The total power dissipation is 101 W.
  7. What is the gate-source threshold voltage of the BUK9M3R3-40HX?
    The gate-source threshold voltage is 2.15 V @ 1 mA.
  8. What are some typical applications for the BUK9M3R3-40HX MOSFET?
    Typical applications include power supplies, DC-DC converters, motor control, high-frequency switching circuits, and automotive/industrial power management systems.
  9. Why is the LFPAK33 package beneficial for this MOSFET?
    The LFPAK33 package enhances thermal performance and reduces PCB space due to its compact size.
  10. What is the significance of the logic level gate drive in the BUK9M3R3-40HX?
    The logic level gate drive makes the MOSFET compatible with a wide range of control signals, simplifying circuit design.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:3766 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):101W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK33
Package / Case:SOT-1210, 8-LFPAK33 (5-Lead)
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Similar Products

Part Number BUK9M3R3-40HX BUK9M4R3-40HX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Ta) 95A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 25A, 10V 4.3mOhm @ 95A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±16V -
Input Capacitance (Ciss) (Max) @ Vds 3766 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 101W (Ta) 90W
Operating Temperature -55°C ~ 175°C (TJ) 175°C
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK33 LFPAK33
Package / Case SOT-1210, 8-LFPAK33 (5-Lead) SOT-1210, 8-LFPAK33 (5-Lead)

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