BUK9M4R3-40HX
  • Share:

Nexperia USA Inc. BUK9M4R3-40HX

Manufacturer No:
BUK9M4R3-40HX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 95A LFPAK33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9M4R3-40HX is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This component is designed for use in demanding applications where high current handling and low on-resistance are critical. The MOSFET is packaged in the LFPAK33 (SOT1210) format, which is known for its compact size and high power density.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)40 V
Continuous Drain Current (Id) @ 25°C95 A
Maximum Operating Temperature+175 °C
Power Dissipation (Pd)90 W
On-Resistance (Rds On) @ Vgs = 10 VNot specified for this model, but similar models have around 3.3 mΩ
Channel ModeEnhancement
PackageLFPAK33 (SOT1210)

Key Features

  • High current handling capability of up to 95 A at 25°C.
  • Low on-resistance, enhancing efficiency and reducing power losses.
  • Compact LFPAK33 (SOT1210) package, ideal for space-constrained applications.
  • Maximum operating temperature of +175 °C, suitable for high-temperature environments.
  • Enhancement mode operation for precise control over the MOSFET.

Applications

The BUK9M4R3-40HX MOSFET is suitable for a variety of high-performance applications, including:

  • Automotive systems, particularly in power management and motor control.
  • Industrial power supplies and DC-DC converters.
  • High-power switching applications where low on-resistance and high current handling are essential.
  • Power management in consumer electronics and computing systems.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the BUK9M4R3-40HX?
    The maximum drain to source voltage (Vdss) is 40 V.
  2. What is the continuous drain current (Id) at 25°C?
    The continuous drain current (Id) at 25°C is 95 A.
  3. What is the maximum operating temperature of the BUK9M4R3-40HX?
    The maximum operating temperature is +175 °C.
  4. What is the power dissipation (Pd) of the MOSFET?
    The power dissipation (Pd) is 90 W.
  5. In what package is the BUK9M4R3-40HX available?
    The BUK9M4R3-40HX is available in the LFPAK33 (SOT1210) package.
  6. Is the BUK9M4R3-40HX suitable for automotive applications?
    Yes, it is suitable for high-performance automotive applications due to its robust specifications and reliability.
  7. What is the channel mode of the BUK9M4R3-40HX?
    The channel mode is enhancement.
  8. Where can I find detailed specifications and datasheets for the BUK9M4R3-40HX?
    Detailed specifications and datasheets can be found on the Nexperia website, as well as through distributors like Digi-Key and Mouser Electronics.
  9. Is the BUK9M4R3-40HX RoHS compliant?
    Yes, the BUK9M4R3-40HX is RoHS compliant.
  10. What are some common applications for the BUK9M4R3-40HX?
    Common applications include automotive systems, industrial power supplies, high-power switching, and power management in consumer electronics and computing systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:95A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 95A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):90W
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:LFPAK33
Package / Case:SOT-1210, 8-LFPAK33 (5-Lead)
0 Remaining View Similar

In Stock

$1.73
481

Please send RFQ , we will respond immediately.

Same Series
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X/AA
DD26S2S50T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0T2X/AA
DD44S32S0T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BUK9M4R3-40HX BUK9M3R3-40HX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 95A (Ta) 80A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 95A, 10V 3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id - 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 55 nC @ 10 V
Vgs (Max) - ±16V
Input Capacitance (Ciss) (Max) @ Vds - 3766 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 90W 101W (Ta)
Operating Temperature 175°C -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK33 LFPAK33
Package / Case SOT-1210, 8-LFPAK33 (5-Lead) SOT-1210, 8-LFPAK33 (5-Lead)

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220

Related Product By Brand

PTVS3V3S1UR,115
PTVS3V3S1UR,115
Nexperia USA Inc.
TVS DIODE 3.3VWM 8VC CFP3
BAV70,235
BAV70,235
Nexperia USA Inc.
DIODE ARRAY GP 100V 215MA SOT23
BAT54A,235
BAT54A,235
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 30V SOT23
BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
PMEG4030ER/8X
PMEG4030ER/8X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 3A SOD123W
PDZ27BF
PDZ27BF
Nexperia USA Inc.
DIODE ZENER 27V 400MW SOD323
PDZ3.3B,115
PDZ3.3B,115
Nexperia USA Inc.
DIODE ZENER 3.3V 400MW SOD323
BZX84-B9V1/DG/B4R
BZX84-B9V1/DG/B4R
Nexperia USA Inc.
DIODE ZENER 9.1V 250MW TO236AB
BC850CW/ZLX
BC850CW/ZLX
Nexperia USA Inc.
TRANS NPN SOT323
BSH111,215
BSH111,215
Nexperia USA Inc.
MOSFET N-CH 55V 335MA TO236AB
74HCT4066D/C4118
74HCT4066D/C4118
Nexperia USA Inc.
74HCT4066D - SPST, 4 FUNC
74LVC00AD-Q100J
74LVC00AD-Q100J
Nexperia USA Inc.
IC GATE NAND 4CH 2-INP 14SO