BUK9M4R3-40HX
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Nexperia USA Inc. BUK9M4R3-40HX

Manufacturer No:
BUK9M4R3-40HX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 95A LFPAK33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9M4R3-40HX is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This component is designed for use in demanding applications where high current handling and low on-resistance are critical. The MOSFET is packaged in the LFPAK33 (SOT1210) format, which is known for its compact size and high power density.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)40 V
Continuous Drain Current (Id) @ 25°C95 A
Maximum Operating Temperature+175 °C
Power Dissipation (Pd)90 W
On-Resistance (Rds On) @ Vgs = 10 VNot specified for this model, but similar models have around 3.3 mΩ
Channel ModeEnhancement
PackageLFPAK33 (SOT1210)

Key Features

  • High current handling capability of up to 95 A at 25°C.
  • Low on-resistance, enhancing efficiency and reducing power losses.
  • Compact LFPAK33 (SOT1210) package, ideal for space-constrained applications.
  • Maximum operating temperature of +175 °C, suitable for high-temperature environments.
  • Enhancement mode operation for precise control over the MOSFET.

Applications

The BUK9M4R3-40HX MOSFET is suitable for a variety of high-performance applications, including:

  • Automotive systems, particularly in power management and motor control.
  • Industrial power supplies and DC-DC converters.
  • High-power switching applications where low on-resistance and high current handling are essential.
  • Power management in consumer electronics and computing systems.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the BUK9M4R3-40HX?
    The maximum drain to source voltage (Vdss) is 40 V.
  2. What is the continuous drain current (Id) at 25°C?
    The continuous drain current (Id) at 25°C is 95 A.
  3. What is the maximum operating temperature of the BUK9M4R3-40HX?
    The maximum operating temperature is +175 °C.
  4. What is the power dissipation (Pd) of the MOSFET?
    The power dissipation (Pd) is 90 W.
  5. In what package is the BUK9M4R3-40HX available?
    The BUK9M4R3-40HX is available in the LFPAK33 (SOT1210) package.
  6. Is the BUK9M4R3-40HX suitable for automotive applications?
    Yes, it is suitable for high-performance automotive applications due to its robust specifications and reliability.
  7. What is the channel mode of the BUK9M4R3-40HX?
    The channel mode is enhancement.
  8. Where can I find detailed specifications and datasheets for the BUK9M4R3-40HX?
    Detailed specifications and datasheets can be found on the Nexperia website, as well as through distributors like Digi-Key and Mouser Electronics.
  9. Is the BUK9M4R3-40HX RoHS compliant?
    Yes, the BUK9M4R3-40HX is RoHS compliant.
  10. What are some common applications for the BUK9M4R3-40HX?
    Common applications include automotive systems, industrial power supplies, high-power switching, and power management in consumer electronics and computing systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:95A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.3mOhm @ 95A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):90W
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:LFPAK33
Package / Case:SOT-1210, 8-LFPAK33 (5-Lead)
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Similar Products

Part Number BUK9M4R3-40HX BUK9M3R3-40HX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 95A (Ta) 80A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 95A, 10V 3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id - 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 55 nC @ 10 V
Vgs (Max) - ±16V
Input Capacitance (Ciss) (Max) @ Vds - 3766 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 90W 101W (Ta)
Operating Temperature 175°C -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK33 LFPAK33
Package / Case SOT-1210, 8-LFPAK33 (5-Lead) SOT-1210, 8-LFPAK33 (5-Lead)

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