BUK9875-100A/CUX
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Nexperia USA Inc. BUK9875-100A/CUX

Manufacturer No:
BUK9875-100A/CUX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 7A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BUK9875-100A/CUX is a high-performance N-channel TrenchMOS logic level MOSFET produced by Nexperia USA Inc. This device is designed to offer excellent switching characteristics and low on-state resistance, making it suitable for a wide range of applications. The MOSFET features a 100V drain-source voltage rating and can handle up to 7A of continuous drain current, making it a reliable choice for power management and switching circuits.

Key Specifications

Parameter Conditions Min Typ Max Unit
VDS (Drain-Source Voltage) Tj ≥ 25 °C; Tj ≤ 150 °C - - 100 V
VDGR (Drain-Gate Voltage) RGS = 20 kΩ - - 100 V
VGS (Gate-Source Voltage) - -10 - 10 V
ID (Drain Current) Tsp = 25 °C; VGS = 5 V - - 7 A
IDM (Peak Drain Current) Tsp = 25 °C; pulsed; tp ≤ 10 µs - - 28 A
Tstg (Storage Temperature) - -55 - 150 °C
Tj (Junction Temperature) - -55 - 150 °C
Ptot (Total Power Dissipation) Tsp = 25 °C; Fig. 1 - - 8 W
RDSon (Drain-Source On-State Resistance) VGS = 10 V; ID = 7 A - - 2.8
Package - - - SOT-223-3 (SC-73) -

Key Features

  • High Performance: The BUK9875-100A/CUX offers high switching speeds and low on-state resistance, making it ideal for high-frequency applications.
  • Logic Level Gate Drive: This MOSFET can be driven directly from logic circuits, simplifying the design process.
  • Low Threshold Voltage: With a typical gate-source threshold voltage (VGS(th)) of 1 to 2 V, it is suitable for use in low-voltage systems.
  • Avalanche Ruggedness: The device is designed to withstand non-repetitive drain-source avalanche energy (EDS(AL)S) of up to 49 mJ.
  • Compliance: Compliant with RoHS, REACH, and other environmental regulations, ensuring it meets current environmental standards.

Applications

  • Power Management: Suitable for power supply circuits, DC-DC converters, and voltage regulators.
  • Motor Control: Can be used in motor drive circuits due to its high current handling and low on-state resistance.
  • Switching Circuits: Ideal for high-frequency switching applications such as audio amplifiers and power amplifiers.
  • Automotive Systems: Applicable in automotive electronics due to its robustness and compliance with automotive standards.

Q & A

  1. What is the maximum drain-source voltage of the BUK9875-100A/CUX?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the maximum continuous drain current of the BUK9875-100A/CUX?

    The maximum continuous drain current (ID) is 7 A.

  3. What is the typical gate-source threshold voltage of the BUK9875-100A/CUX?

    The typical gate-source threshold voltage (VGS(th)) is between 1 to 2 V.

  4. What is the package type of the BUK9875-100A/CUX?

    The package type is SOT-223-3 (SC-73).

  5. Is the BUK9875-100A/CUX compliant with RoHS and REACH regulations?

    Yes, it is compliant with RoHS, REACH, and other environmental regulations.

  6. What is the maximum junction temperature of the BUK9875-100A/CUX?

    The maximum junction temperature (Tj) is 150 °C.

  7. What is the peak drain current of the BUK9875-100A/CUX?

    The peak drain current (IDM) is up to 28 A for pulsed conditions.

  8. What is the total power dissipation of the BUK9875-100A/CUX at 25 °C?

    The total power dissipation (Ptot) is up to 8 W at 25 °C.

  9. Is the BUK9875-100A/CUX suitable for high-frequency applications?

    Yes, it is suitable for high-frequency applications due to its high switching speeds and low on-state resistance.

  10. Can the BUK9875-100A/CUX be driven directly from logic circuits?

    Yes, it can be driven directly from logic circuits due to its logic level gate drive capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:72mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:1690 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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